Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • The mirror image wiring of (MA6X123) • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) 1.45 1 + 0.1 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.3 − 0.05 0.65 ± 0.15 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Forward current (DC)*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature 1 : Cathode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Anode 3 3 : Anode 2 6 : Anode 4 Mini Type Package (6-pin) Marking Symbol: M2V IFM 225 mA IFSM 500 mA Tj 150 °C 6 1 °C 5 2 4 3 −55 to +150 Tstg Internal Connection Note) *1 : Value for single diode *2 : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 100 nA IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns Reverse current (DC) Reverse recovery time* 1.2 80 V V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA6X128 Switching Diodes IF V F VF Ta IR V R 103 100 102 10 1.6 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 1.4 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 100°C 1 0.1 25°C 0.01 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 3 mA 0.4 0.2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 Forward voltage VF (V) IR Ta 1 10−1 10−2 0 40 80 120 0 −40 120 0 40 160 Ambient temperature Ta (°C) 200 120 0.8 0.6 0.4 0.2 0 20 40 60 80 160 200 IF(surge) tW 1.0 0 80 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) Reverse current IR (µA) 100 1 000 35 V 1V 10 2 80 1.2 VR = 75 V −40 60 Ct VR 102 10−3 40 Reverse voltage VR (V) 100 Reverse voltage VR (V) 120 Forward surge current IF (surge) (A) 10−2 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30