PANASONIC MA3D693

Fast Recovery Diodes (FRD)
MA3D693
Silicon planar type
Unit : mm
For high-frequency rectification
4.6 ± 0.2
15.0 ± 0.5
■ Features
φ 3.2 ± 0.1
1.4 ± 0.2
13.7 ± 0.2
4.2 ± 0.2
• Low forward rise voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown
votlage > 5.0 kV
• Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
400
V
Non-repetitive peak reverse
surge voltage
VRSM
400
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
surge current*
IFSM
45
A
Junction temperature
Tj
−40 to +150
°C
Storage temperature
Tstg
−40 to +150
°C
2.6 ± 0.1
1.6 ± 0.2
0.8 ± 0.1
1
Parameter
2.9 ± 0.2
3.0 ± 0.5
9.9 ± 0.3
2
0.55 ± 0.15
2.54 ± 0.3
3 5.08 ± 0.5
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Internal Connection
1
2
3
Min
Typ
Max
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Repetitive peak reverse current
Conditions
IRRM1
VRRM = 400 V, TC = 25°C
50
µA
IRRM2
VRRM = 400 V, Tj = 150°C
3
mA
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
Reverse recovery time*
trr
IF = 1 A, IR = 1 A
Thermal resistance
Unit
Rth(j-c)
Direct current (between junction and case)
Rth(j-a)
1
V
100
ns
3.3
°C/W
62.5
°C/W
Note) 1. Rated input/output frequency: 10 MHz
2. * : trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
IR
0.1 × IR
5.5 Ω
1
MA3D693
Fast Recovery Diodes (FRD)
IF  V F
100°C 25°C
Ta = 150°C
10−1
10−2
10−3
IR  VR
104
1.4
−20°C
Forward voltage VF (V)
1
Forward current IF (A)
VF  Ta
1.6
103
Reverse current IR (µA)
10
1.2
1.0
IF = 5 A
0.8
2.5 A
0.6
1A
0.4
Ta = 150°C
102
100°C
10
25°C
1
10−1
10−4
0.2
10−5
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
10−2
0
0.1
120
160
200
IF(AV)  TC
Average forward current IF(AV) (A)
8
7
t0
t1
6
t0 / t1 = 1/2
1/3
1/6
4
DC
3
2
1
0
40
60
80
100
120
140
Case temperature TC (°C)
2
100
160
200
300
400
500
600
PD(AV)  IF(AV)
15
200
150
100
50
0
50
100
150
200
250
Reverse voltage VR (V)
Ambient temperature Ta (°C)
5
0
Reverse voltage VR (V)
250
0
80
200
Average forward power PD(AV) (W)
1
Terminal capacitance Ct (pF)
Reverse current IR (µA)
10 V
10
40
160
Ct  VR
100 V
0
120
300
VR = 400 V
100
0.01
−40
80
Ambient temperature Ta (°C)
IR  T a
1 000
40
300
t0
t1
10
t0 / t1 = 1/6
1/3
1/2
DC
5
0
0
1
2
3
4
5
6
Average forward current IF(AV) (A)