REVISIONS LTR DESCRIPTION A Add paragraph 3.1.1 and die Appendix A. - ro B Add device types 02 and 62. Make change to paragraphs 1.2.2, 1.2.4, 1.3, and 1.5. Make changes to Table I and figure 2. Make change to Table IIB and paragraph 4.4.4.1. -rrp DATE (YR-MO-DA) APPROVED 08-09-17 R. HEBER 11-11-21 C. SAFFLE REV SHEET REV B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil CHECKED BY RAJESH PITHADIA APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A ROBERT M. HEBER DRAWING APPROVAL DATE 08-02-25 REVISION LEVEL B MICROCIRCUIT, LINEAR, HIGH VOLTAGE, ADJUSTABLE, POSITIVE VOLTAGE REGULATOR, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-07229 1 OF 23 5962-E011-12 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 07229 Federal stock class designator \ RHA designator (see 1.2.1) 01 V X A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Generic number 01 02 61 LM117HVH, WG LM117HVGW LM117HVH, WG 62 LM117HVGW 03 LM117HVK Circuit function 0.5 A, high voltage, adjustable, positive voltage regulator 0.5 A, high voltage, adjustable, positive voltage regulator Radiation hardened, 0.5 A, high voltage, adjustable, positive voltage regulator Radiation hardened, 0.5 A, high voltage, adjustable, positive voltage regulator 1.5 A, high voltage, adjustable, positive voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter X Y Z 1/ Descriptive designator See figure 1 MBFM1-P2 GDFP1-G16 Terminals Package style 3 2 16 TO-39 can TO-3 flange mount Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ For case outline Z, package material for device types 01 and 61 is aluminum nitride and package material for device types 02 and 62 is aluminum oxide. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 2 1.3 Absolute maximum ratings. 2/ Input – output voltage differential ............................................................. Power dissipation (PD) is internally limited: 3/ Case X .................................................................................................. Case Y .................................................................................................. Case Z .................................................................................................. Maximum junction temperature (TJmax) ................................................... Storage temperature range ...................................................................... Lead temperature (soldering, 10 seconds) ............................................... Electrostatic discharge (ESD) .................................................................. Design load current: Case X .................................................................................................. Case Y .................................................................................................. Case Z .................................................................................................. Thermal resistance, junction-to-case (θJC): Case X .................................................................................................. Case Y .................................................................................................. Case Z (Device types 01 and 61) ........................................................ Case Z (Device types 02 and 62) ........................................................ Thermal resistance, junction-to-ambient (θJA): Case X .................................................................................................. +60 V, -0.3 V 2W 20 W 2W +150°C -65°C ≤ TA ≤ +150°C +300°C 2000 V 4/ 0.5 A 1.5 A 0.5 A 21°C/W 1.9°C/W 3.4°C/W 1/ 5/ 7°C/W 1/ 186°C/W, still air 64°C/W, 500 linear feet per minute air flow Case Y .................................................................................................. 39°C/W, still air 14°C/W, 500 linear feet per minute air flow Case Z (Device types 01 and 61) .......................................................... 115°C/W, still air 66°C/W, 500 linear feet per minute air flow 1/ 6/ Case Z (Device types 02 and 62) .......................................................... 130°C/W, still air 80°C/W, 500 linear feet per minute air flow 1/ 6/ 1.4 Recommended operating conditions. Ambient operating temperature range (TA) .............................................. -55°C ≤ TA ≤ +125°C ______ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum 4/ 5/ 6/ allowable power dissipation at any temperature is PD = ( TJmax – TA ) / θJA or the number given in the absolute maximum ratings, whichever is lower. Human body model (HBM), 1.5 kΩ in series with 100 pF. The package material for these devices allows much improved heat transfer over our standard ceramic packages. In order to take full advantage of this improved heat transfer, heat sinking must be provided between the package base (directly beneath the die), and either metal traces on, or thermal vias through, the printed circuit board. Without this additional heat sinking, device power dissipation must be calculated using θJA, rather than θJC, thermal resistance. It must not be assumed that the device leads will provide substantial heat transfer out the package, since the thermal resistance of the lead frame material is very poor, relative to the material of the package base. The stated θJC thermal resistance is for the package material only, and does not account for the additional thermal resistance between the package base and the printed circuit board. The user must determine the value of the additional thermal resistance and must combine this with the stated value for the package, to calculate the total allowed dissipation for the device. For the case Z device to function properly, the “Output” and “Output/Sense” pins must be connected on the users printed circuit board. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 3 1.5 Radiation features. 7/ Maximum total dose available (dose rate = 50 – 300 rads(Si)/s): Device class V (device types 01 and 02) .............................................. 100 krads(Si) Maximum total dose available (dose rate = 10 mrads(Si)/s): Device class V (device types 61 and 62) .............................................. 100 krads(Si) The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate if the parts exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.11. These parts have been characterized as being (ELDRS) sensitive. The characterization test demonstrated that the parts did pass the radiation end point parameter limits under low dose rate conditions. Therefore, this part may be considered qualified for space use even though it is ELDRS because it is tested at low dose rate according to MIL-STD-883, method 1019. The manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer according to method 1019 of MIL-STD-883. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ________ 7/ Device types 01 and 02 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed at the high dose rate only for the conditions specified in MIL-STD-883, method 1019, condition A. Device types 61 and 62 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition E to the radiation specification level with a parameter delta design margin (PDDM) of 2. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 4 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MILPRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55°C ≤ TA ≤ +125°C unless otherwise specified Group A subgroups Device type 1 01, 02, 61, 62 Limits Min Adjustment pin current Minimum load current IADJ IQ VDiff = 3 V VREF 100 VDiff = 40 V 1,2,3 100 1 VDiff = 3 V, VO = 1.7 V 01, 02, 61, 62 5.0 2,3 5.0 VI = 40 V, VO = 1.7 V 1,2,3 5.0 VI = 60 V, VO = 1.7 V 1 8.2 VDiff = 3 V 1 1.2 1.3 1 1.2 1.45 VDiff = 3.3 V 2,3 1.2 1.3 VDiff = 40 V 1,2,3 1.2 1.3 1 1.2 1.45 -8.64 8.64 1 -40 40 2,3 -18 18 1 -25 25 -15 15 1 -27 27 2,3 -15 15 1 -15 15 2,3 -15 15 M,D,P,L,R VRLINE 100 2,3 M,D,P,L,R Line regulation Max VDiff = 3.3 V VDiff = 3.3 V, VO = 1.7 V Reference voltage Unit 1 3 V ≤ VDiff ≤ 40 V, 01, 02, 61, 62 01, 02, 61, 62 µA mA V mV VO = VREF M,D,P,L,R 3.3 V ≤ VDiff ≤ 40 V, VO = VREF 40 V ≤ VDiff ≤ 60 V, IL = 60 mA Load regulation VRLOAD 1 VDiff = 3 V, 01, 02, 61, 62 mV IL = 10 mA to 500 mA M,D,P,L,R VDiff = 3.3 V, IL = 10 mA to 500 mA VDiff = 40 V, IL = 10 mA to 150 mA VDiff = 40 V, IL = 10 mA to 100 mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 6 TABLE I. Electrical performance characteristics – Continued. Test Adjustment pin current change Symbol Conditions 1/ 2/ 3/ -55°C ≤ TA ≤ +125°C unless otherwise specified Group A subgroups VDiff = 3 V, load IL = 10 mA to 500 mA VDiff = 3.3 V, Limits Unit Min Max -5.0 5.0 2,3 -5.0 5.0 1 -5.0 5.0 2,3 -5.0 5.0 -5.0 5.0 -5.0 5.0 0.0 0.4 0.5 1.8 1 ∆IADJ / Device type 01, 02, 61, 62 µA IL = 10 mA to 500 mA VDiff = 40 V, IL = 10 mA to 150 mA VDiff = 40 V, IL = 10 mA to 100 mA Adjustment pin current change ∆IADJ / 1 3 V ≤ VDiff ≤ 40 V line 2,3 3.3 V ≤ VDiff ≤ 40 V Short circuit current IOS 01, 02, 61, 62 VDiff = 60 V, TA = 25°C 1 01, 02, 61, 62 VDiff = 4.25 V, TA = 25°C Thermal regulation θR VDiff = 40 V, TA = 25°C, 1 01, 02, 61, 62 4,5,6 01, 02, 61, 62 6.0 µA A mV IL = 150 mA, t = 20 mS Ripple rejection 4/ RR VI = +6.25 V, f = 120 Hz, 66 dB eI = 1 VRMS, IL = 125 mA, VO = VREF M,D,P,L,R 4 55 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 5/ -55°C ≤ TA ≤ +125°C unless otherwise specified Group A subgroups Device type Limits Min Adjustment pin current Minimum load current IADJ IQ 1 VDiff = 3 V Line regulation VREF VRLINE Max 100 VDiff = 3.3 V 2,3 100 VDiff = 40 V 1,2,3 100 1 VDiff = 3 V, VO = 1.7 V 03 5.0 2,3 5.0 VI = 40 V, VO = 1.7 V 1,2,3 5.0 VI = 60 V, VO = 1.7 V 1 VDiff = 3 V 1 VDiff = 3.3 V, VO = 1.7 V Reference voltage 03 Unit 03 0.25 8.2 1.2 1.3 VDiff = 3.3 V 2,3 1.2 1.3 VDiff = 40 V 1,2,3 1.2 1.3 -8.64 8.64 2,3 -18 18 1 -25 25 -15 15 2,3 -15 15 1 -15 15 2,3 -15 15 1 3 V ≤ VDiff ≤ 40 V, 03 µA mA V mV VO = VREF 3.3 V ≤ VDiff ≤ 40 V, VO = VREF 40 V ≤ VDiff ≤ 60 V, IL = 60 mA Load regulation VRLOAD 1 VDiff = 3 V, 03 mV IL = 10 mA to 1.5 A VDiff = 3.3 V, IL = 10 mA to 1.5 A VDiff = 40 V, IL = 10 mA to 300 mA VDiff = 40 V, IL = 10 mA to 195 mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 8 TABLE I. Electrical performance characteristics – Continued. Test Adjustment pin current change Symbol Conditions 5/ -55°C ≤ TA ≤ +125°C unless otherwise specified ∆IADJ / VDiff = 3 V, load IL = 10 mA to 1.5 A Group A subgroups Device type Unit Min Max -5.0 5.0 2,3 -5.0 5.0 1 -5.0 5.0 2,3 -5.0 5.0 -5.0 5.0 -5.0 5.0 0.0 0.4 1.5 3.5 1 VDiff = 3.3 V, Limits 03 µA IL = 10 mA to 1.5 A VDiff = 40 V, IL = 10 mA to 300 mA VDiff = 40 V, IL = 10 mA to 195 mA Adjustment pin current change ∆IADJ / 1 3 V ≤ VDiff ≤ 40 V 2,3 IOS VDiff = 60 V, TA = 25°C 1 03 VDiff = 3 V, TA = 25°C Thermal regulation µA line 3.3 V ≤ VDiff ≤ 40 V Short circuit current 03 θR VDiff = 40 V, TA = 25°C, 1 03 4,5,6 03 10.5 A mV IL = 300 mA, t = 20 mS Ripple rejection 4/ RR VI = +6.25 V, f = 120 Hz, 66 dB eI = 1 VRMS, IL = 0.5 A, VO = VREF 1/ Unless otherwise specified, VDiff = ( VI – VO ), IL = 8 mA, VOUT = 1.25 V (nominal). 2/ Devices supplied to this drawing have been tested through all levels M, D, P, L, R of irradiation. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. 3/ Device types 01 and 02 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed at the high dose rate only for the conditions specified in MIL-STD-883, method 1019, condition A. Device types 61 and 62 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition E to the radiation specification level with a parameter delta design margin (PDDM) of 2. 4/ Tested at +25°C; guaranteed, but not tested at +125°C and -55°C. 5/ Unless otherwise specified, VDiff = ( VI – VO ), IL = 10 mA, VOUT = 1.25 V (nominal). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 9 Case X FIGURE 1. Case outline. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 10 Case X – continued. Symbol Inches Millimeters Min Max Min Max A .165 .185 4.20 4.70 φb .016 .019 0.407 0.483 φD .350 .370 8.89 9.39 φD1 .315 .335 8.01 8.51 e .200 BSC 5.08 BSC F --- .050 --- 1.27 k .028 .034 0.72 0.86 k1 .029 .040 0.74 1.01 L .500 --- 12.70 --- L1 --- .025 --- 0.63 α 45° T.P. 45° T.P. NOTE: 1. Controlling dimensions are inch, millimeter dimensions are given for reference only. FIGURE 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 11 NOTE: Case X is for device types 01 and 61. Case Y is for device type 03. FIGURE 2. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 12 Device types 01, 02, 61, and 62 Case outline Z Terminal number Terminal symbol 1 NC 2 NC 3 ADJ 4 NC 5 INPUT 6 NC 7 NC 8 NC 9 NC 10 NC 11 NC 12 OUTPUT 13 OUTPUT / SENSE 14 NC 15 NC 16 NC NC = No connection FIGURE 2. Terminal connections – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 13 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 14 TABLE IIA. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1/ 2/ Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M 1 1 1 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1,2,3,4,5,6 1,2,3,4,5,6 1 1 1 2/ 1 1 1 1,4 1,4 1,4 Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V PDA applies to subgroup 1. Delta limits as specified in table IIB herein shall be required where specified, and the delta limits shall be computed with reference to the previous endpoint electrical parameters. TABLE IIB. Delta electrical characteristics. TA = +25°C 1/ Test Adjustment pin current Reference voltage Line regulation Conditions Symbol IADJ VREF VRLINE Group A subgroups Device type VDiff = 3 V 1 01, 02, 61, 62 VDiff = 40 V 1 VDiff = 3 V 1 VDiff = 40 V 1 3 V ≤ VDiff ≤ 40 V, 1 01, 02, 61, 62 01, 02, 61, 62 Limits Unit Min Max -10 10 -10 10 -0.01 0.01 -0.01 0.01 -4.0 4.0 -6.0 6.0 µA V mV VO = VREF 1 40 V ≤ VDiff ≤ 60 V, IL = 60 mA 1/ Deltas performed on QMLV devices at Group B, subgroup 5, only. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 15 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A for device types 01 and 02, condition E for device types 61 and 62 and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0544. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 16 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DLA Land and Maritime -VA. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see A.1.2.1) 07229 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 61 Generic number LM117HV LM117HV Circuit function 0.5 A, high voltage, adjustable, positive voltage regulator 0.5 A, high voltage, adjustable, positive voltage regulator A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-07229 A REVISION LEVEL B SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01 61 A-1 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01 61 A-1 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01 61 A-1 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01 61 A-1 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and 4.4.4.1 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 432183990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-07229 Die bond pad coordinate locations (C-step) (Referenced to die center, coordinates in µm) NC = no connection, NU = not used Signal name Pad number X / Y coordinates Pad size X Y X Y Input 1 10 986 213 x 210 Output 2 -655 515 228 x 187 NC 3 -680 -673 91 x 91 NC 4 -826 -689 88 x 170 Output 5 -914 -1000 193 x 198 Adj 6 913 -996 195 x 205 NC 7 800 -391 208 x 208 Input 8 254 -91 193 x 233 Output 9 603 514 226 x 185 Die bonding pad locations and electrical functions Die physical dimensions. Die size: 2184.40 µm x 2362.20 µm Die thickness: 254 µm nominal Minimum pitch: 1827.53 µm Interface materials. Top metallization: Al 0.5% CU Backside metallization: Gold Glassivation. Type: Vapox over metal (VOM only) Thickness: 8 kÅ to 12 kÅ Substrate: Silicon Assembly related information. Substrate potential: Output Special assembly instructions: None FIGURE A-1. Die bonding pad locations and electrical functions – continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-07229 A REVISION LEVEL B SHEET 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 11-11-21 Approved sources of supply for SMD 5962-07229 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-0722901QXA 27014 LM117HVH-QML 5962-0722901QZA 3/ LM117HVWG-QML 5962-0722902QZA 27014 LM117HVGW-QML 5962-0722903QYA 27014 LM117HVK-QML 5962R0722901VXA 27014 LM117HVHRQMLV 5962R0722901VZA 3/ LM117HVWGRQMLV 5962R0722902VZA 27014 LM117HVGWRQMLV 5962R0722961VXA 27014 LM117HVHRLQMLV 5962R0722961VZA 3/ LM117HVWGRLQMLV 5962R0722962VZA 27014 LM117HVGWRLQMLV 5962R0722901V9A 27014 LM117HVH MDR 5962R0722961V9A 27104 LM117HVH MDE 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number 27014 Vendor name and address National Semiconductor 2900 Semiconductor Drive P.O. Box 58090 Santa Clara, CA 95052-8090 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.