5962-0722901QXA SMD

REVISIONS
LTR
DESCRIPTION
A
Add paragraph 3.1.1 and die Appendix A. - ro
B
Add device types 02 and 62. Make change to paragraphs 1.2.2, 1.2.4, 1.3,
and 1.5. Make changes to Table I and figure 2. Make change to Table IIB and
paragraph 4.4.4.1. -rrp
DATE (YR-MO-DA)
APPROVED
08-09-17
R. HEBER
11-11-21
C. SAFFLE
REV
SHEET
REV
B
B
B
B
B
B
B
B
B
SHEET
15
16
17
18
19
20
21
22
23
REV STATUS
REV
B
B
B
B
B
B
B
B
B
B
B
B
B
B
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
ROBERT M. HEBER
DRAWING APPROVAL DATE
08-02-25
REVISION LEVEL
B
MICROCIRCUIT, LINEAR, HIGH VOLTAGE,
ADJUSTABLE, POSITIVE VOLTAGE REGULATOR,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-07229
1 OF 23
5962-E011-12
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
07229
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type 1/
Generic number
01
02
61
LM117HVH, WG
LM117HVGW
LM117HVH, WG
62
LM117HVGW
03
LM117HVK
Circuit function
0.5 A, high voltage, adjustable, positive voltage regulator
0.5 A, high voltage, adjustable, positive voltage regulator
Radiation hardened, 0.5 A, high voltage, adjustable, positive
voltage regulator
Radiation hardened, 0.5 A, high voltage, adjustable, positive
voltage regulator
1.5 A, high voltage, adjustable, positive voltage regulator
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Z 1/
Descriptive designator
See figure 1
MBFM1-P2
GDFP1-G16
Terminals
Package style
3
2
16
TO-39 can
TO-3 flange mount
Flat pack with gullwing leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1/ For case outline Z, package material for device types 01 and 61 is aluminum nitride and package material for device types 02
and 62 is aluminum oxide.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
2
1.3 Absolute maximum ratings. 2/
Input – output voltage differential .............................................................
Power dissipation (PD) is internally limited: 3/
Case X ..................................................................................................
Case Y ..................................................................................................
Case Z ..................................................................................................
Maximum junction temperature (TJmax) ...................................................
Storage temperature range ......................................................................
Lead temperature (soldering, 10 seconds) ...............................................
Electrostatic discharge (ESD) ..................................................................
Design load current:
Case X ..................................................................................................
Case Y ..................................................................................................
Case Z ..................................................................................................
Thermal resistance, junction-to-case (θJC):
Case X ..................................................................................................
Case Y ..................................................................................................
Case Z (Device types 01 and 61) ........................................................
Case Z (Device types 02 and 62) ........................................................
Thermal resistance, junction-to-ambient (θJA):
Case X ..................................................................................................
+60 V, -0.3 V
2W
20 W
2W
+150°C
-65°C ≤ TA ≤ +150°C
+300°C
2000 V 4/
0.5 A
1.5 A
0.5 A
21°C/W
1.9°C/W
3.4°C/W 1/ 5/
7°C/W 1/
186°C/W, still air
64°C/W, 500 linear feet per minute air flow
Case Y .................................................................................................. 39°C/W, still air
14°C/W, 500 linear feet per minute air flow
Case Z (Device types 01 and 61) .......................................................... 115°C/W, still air
66°C/W, 500 linear feet per minute air flow 1/ 6/
Case Z (Device types 02 and 62) .......................................................... 130°C/W, still air
80°C/W, 500 linear feet per minute air flow 1/ 6/
1.4 Recommended operating conditions.
Ambient operating temperature range (TA) .............................................. -55°C ≤ TA ≤ +125°C
______
2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction
temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum
4/
5/
6/
allowable power dissipation at any temperature is PD = ( TJmax – TA ) / θJA or the number given in the absolute maximum
ratings, whichever is lower.
Human body model (HBM), 1.5 kΩ in series with 100 pF.
The package material for these devices allows much improved heat transfer over our standard ceramic packages.
In order to take full advantage of this improved heat transfer, heat sinking must be provided between the package base
(directly beneath the die), and either metal traces on, or thermal vias through, the printed circuit board. Without this
additional heat sinking, device power dissipation must be calculated using θJA, rather than θJC, thermal resistance. It must
not be assumed that the device leads will provide substantial heat transfer out the package, since the thermal resistance of
the lead frame material is very poor, relative to the material of the package base. The stated θJC thermal resistance is for
the package material only, and does not account for the additional thermal resistance between the package base and the
printed circuit board. The user must determine the value of the additional thermal resistance and must combine this with the
stated value for the package, to calculate the total allowed dissipation for the device.
For the case Z device to function properly, the “Output” and “Output/Sense” pins must be connected on the users printed
circuit board.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
3
1.5 Radiation features. 7/
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device class V (device types 01 and 02) .............................................. 100 krads(Si)
Maximum total dose available (dose rate = 10 mrads(Si)/s):
Device class V (device types 61 and 62) .............................................. 100 krads(Si)
The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate if the
parts exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.11.
These parts have been characterized as being (ELDRS) sensitive. The characterization test demonstrated that the
parts did pass the radiation end point parameter limits under low dose rate conditions. Therefore, this part may be
considered qualified for space use even though it is ELDRS because it is tested at low dose rate according to MIL-STD-883,
method 1019. The manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer
according to method 1019 of MIL-STD-883.
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
________
7/ Device types 01 and 02 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point
limits for the noted parameters are guaranteed at the high dose rate only for the conditions specified in MIL-STD-883,
method 1019, condition A.
Device types 61 and 62 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point
limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition E to
the radiation specification level with a parameter delta design margin (PDDM) of 2.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MILPRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 52 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
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A
REVISION LEVEL
B
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01, 02,
61, 62
Limits
Min
Adjustment pin current
Minimum load current
IADJ
IQ
VDiff = 3 V
VREF
100
VDiff = 40 V
1,2,3
100
1
VDiff = 3 V, VO = 1.7 V
01, 02,
61, 62
5.0
2,3
5.0
VI = 40 V, VO = 1.7 V
1,2,3
5.0
VI = 60 V, VO = 1.7 V
1
8.2
VDiff = 3 V
1
1.2
1.3
1
1.2
1.45
VDiff = 3.3 V
2,3
1.2
1.3
VDiff = 40 V
1,2,3
1.2
1.3
1
1.2
1.45
-8.64
8.64
1
-40
40
2,3
-18
18
1
-25
25
-15
15
1
-27
27
2,3
-15
15
1
-15
15
2,3
-15
15
M,D,P,L,R
VRLINE
100
2,3
M,D,P,L,R
Line regulation
Max
VDiff = 3.3 V
VDiff = 3.3 V, VO = 1.7 V
Reference voltage
Unit
1
3 V ≤ VDiff ≤ 40 V,
01, 02,
61, 62
01, 02,
61, 62
µA
mA
V
mV
VO = VREF
M,D,P,L,R
3.3 V ≤ VDiff ≤ 40 V,
VO = VREF
40 V ≤ VDiff ≤ 60 V,
IL = 60 mA
Load regulation
VRLOAD
1
VDiff = 3 V,
01, 02,
61, 62
mV
IL = 10 mA to 500 mA
M,D,P,L,R
VDiff = 3.3 V,
IL = 10 mA to 500 mA
VDiff = 40 V,
IL = 10 mA to 150 mA
VDiff = 40 V,
IL = 10 mA to 100 mA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
6
TABLE I. Electrical performance characteristics – Continued.
Test
Adjustment pin current
change
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
VDiff = 3 V,
load
IL = 10 mA to 500 mA
VDiff = 3.3 V,
Limits
Unit
Min
Max
-5.0
5.0
2,3
-5.0
5.0
1
-5.0
5.0
2,3
-5.0
5.0
-5.0
5.0
-5.0
5.0
0.0
0.4
0.5
1.8
1
∆IADJ /
Device
type
01, 02,
61, 62
µA
IL = 10 mA to 500 mA
VDiff = 40 V,
IL = 10 mA to 150 mA
VDiff = 40 V,
IL = 10 mA to 100 mA
Adjustment pin current
change
∆IADJ /
1
3 V ≤ VDiff ≤ 40 V
line
2,3
3.3 V ≤ VDiff ≤ 40 V
Short circuit current
IOS
01, 02,
61, 62
VDiff = 60 V, TA = 25°C
1
01, 02,
61, 62
VDiff = 4.25 V, TA = 25°C
Thermal regulation
θR
VDiff = 40 V, TA = 25°C,
1
01, 02,
61, 62
4,5,6
01, 02,
61, 62
6.0
µA
A
mV
IL = 150 mA, t = 20 mS
Ripple rejection 4/
RR
VI = +6.25 V, f = 120 Hz,
66
dB
eI = 1 VRMS, IL = 125 mA,
VO = VREF
M,D,P,L,R
4
55
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
7
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 5/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Adjustment pin current
Minimum load current
IADJ
IQ
1
VDiff = 3 V
Line regulation
VREF
VRLINE
Max
100
VDiff = 3.3 V
2,3
100
VDiff = 40 V
1,2,3
100
1
VDiff = 3 V, VO = 1.7 V
03
5.0
2,3
5.0
VI = 40 V, VO = 1.7 V
1,2,3
5.0
VI = 60 V, VO = 1.7 V
1
VDiff = 3 V
1
VDiff = 3.3 V, VO = 1.7 V
Reference voltage
03
Unit
03
0.25
8.2
1.2
1.3
VDiff = 3.3 V
2,3
1.2
1.3
VDiff = 40 V
1,2,3
1.2
1.3
-8.64
8.64
2,3
-18
18
1
-25
25
-15
15
2,3
-15
15
1
-15
15
2,3
-15
15
1
3 V ≤ VDiff ≤ 40 V,
03
µA
mA
V
mV
VO = VREF
3.3 V ≤ VDiff ≤ 40 V,
VO = VREF
40 V ≤ VDiff ≤ 60 V,
IL = 60 mA
Load regulation
VRLOAD
1
VDiff = 3 V,
03
mV
IL = 10 mA to 1.5 A
VDiff = 3.3 V,
IL = 10 mA to 1.5 A
VDiff = 40 V,
IL = 10 mA to 300 mA
VDiff = 40 V,
IL = 10 mA to 195 mA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
8
TABLE I. Electrical performance characteristics – Continued.
Test
Adjustment pin current
change
Symbol
Conditions 5/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
∆IADJ /
VDiff = 3 V,
load
IL = 10 mA to 1.5 A
Group A
subgroups
Device
type
Unit
Min
Max
-5.0
5.0
2,3
-5.0
5.0
1
-5.0
5.0
2,3
-5.0
5.0
-5.0
5.0
-5.0
5.0
0.0
0.4
1.5
3.5
1
VDiff = 3.3 V,
Limits
03
µA
IL = 10 mA to 1.5 A
VDiff = 40 V,
IL = 10 mA to 300 mA
VDiff = 40 V,
IL = 10 mA to 195 mA
Adjustment pin current
change
∆IADJ /
1
3 V ≤ VDiff ≤ 40 V
2,3
IOS
VDiff = 60 V, TA = 25°C
1
03
VDiff = 3 V, TA = 25°C
Thermal regulation
µA
line
3.3 V ≤ VDiff ≤ 40 V
Short circuit current
03
θR
VDiff = 40 V, TA = 25°C,
1
03
4,5,6
03
10.5
A
mV
IL = 300 mA, t = 20 mS
Ripple rejection 4/
RR
VI = +6.25 V, f = 120 Hz,
66
dB
eI = 1 VRMS, IL = 0.5 A,
VO = VREF
1/
Unless otherwise specified, VDiff = ( VI – VO ), IL = 8 mA, VOUT = 1.25 V (nominal).
2/
Devices supplied to this drawing have been tested through all levels M, D, P, L, R of irradiation. Pre and Post irradiation
values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements
for any RHA level, TA = +25°C.
3/
Device types 01 and 02 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point
limits for the noted parameters are guaranteed at the high dose rate only for the conditions specified in MIL-STD-883,
method 1019, condition A.
Device types 61 and 62 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point
limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition E to
the radiation specification level with a parameter delta design margin (PDDM) of 2.
4/
Tested at +25°C; guaranteed, but not tested at +125°C and -55°C.
5/
Unless otherwise specified, VDiff = ( VI – VO ), IL = 10 mA, VOUT = 1.25 V (nominal).
STANDARD
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REVISION LEVEL
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9
Case X
FIGURE 1. Case outline.
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Case X – continued.
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.165
.185
4.20
4.70
φb
.016
.019
0.407
0.483
φD
.350
.370
8.89
9.39
φD1
.315
.335
8.01
8.51
e
.200 BSC
5.08 BSC
F
---
.050
---
1.27
k
.028
.034
0.72
0.86
k1
.029
.040
0.74
1.01
L
.500
---
12.70
---
L1
---
.025
---
0.63
α
45° T.P.
45° T.P.
NOTE:
1. Controlling dimensions are inch, millimeter dimensions are given for reference only.
FIGURE 1. Case outline – Continued.
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MICROCIRCUIT DRAWING
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NOTE: Case X is for device types 01 and 61. Case Y is for device type 03.
FIGURE 2. Terminal connections.
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Device types
01, 02, 61, and 62
Case outline
Z
Terminal
number
Terminal symbol
1
NC
2
NC
3
ADJ
4
NC
5
INPUT
6
NC
7
NC
8
NC
9
NC
10
NC
11
NC
12
OUTPUT
13
OUTPUT / SENSE
14
NC
15
NC
16
NC
NC = No connection
FIGURE 2. Terminal connections – Continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-07229
A
REVISION LEVEL
B
SHEET
13
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1015 of MIL-STD-883.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
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A
REVISION LEVEL
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SHEET
14
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1/
2/
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
1
1
1,2,3,4,5,6 1/
1,2,3,4,5,6 1/
1,2,3,4,5,6 1/
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6
1
1
1 2/
1
1
1
1,4
1,4
1,4
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
PDA applies to subgroup 1.
Delta limits as specified in table IIB herein shall be required where specified, and the delta limits
shall be computed with reference to the previous endpoint electrical parameters.
TABLE IIB. Delta electrical characteristics. TA = +25°C 1/
Test
Adjustment pin current
Reference voltage
Line regulation
Conditions
Symbol
IADJ
VREF
VRLINE
Group A
subgroups
Device
type
VDiff = 3 V
1
01, 02,
61, 62
VDiff = 40 V
1
VDiff = 3 V
1
VDiff = 40 V
1
3 V ≤ VDiff ≤ 40 V,
1
01, 02,
61, 62
01, 02,
61, 62
Limits
Unit
Min
Max
-10
10
-10
10
-0.01
0.01
-0.01
0.01
-4.0
4.0
-6.0
6.0
µA
V
mV
VO = VREF
1
40 V ≤ VDiff ≤ 60 V,
IL = 60 mA
1/
Deltas performed on QMLV devices at Group B, subgroup 5, only.
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C,
after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device types 01 and 02, condition E for device types 61 and 62 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0544.
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6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA
and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
07229
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
61
Generic number
LM117HV
LM117HV
Circuit function
0.5 A, high voltage, adjustable, positive voltage regulator
0.5 A, high voltage, adjustable, positive voltage regulator
A.1.2.3 Device class designator.
Device class
Q or V
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Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
61
A-1
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
61
A-1
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01
61
A-1
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
61
A-1
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 432183990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime VA and have agreed to this drawing.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
FIGURE A-1. Die bonding pad locations and electrical functions.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-07229
Die bond pad coordinate locations (C-step)
(Referenced to die center, coordinates in µm) NC = no connection, NU = not used
Signal name
Pad number
X / Y coordinates
Pad size
X
Y
X
Y
Input
1
10
986
213
x
210
Output
2
-655
515
228
x
187
NC
3
-680
-673
91
x
91
NC
4
-826
-689
88
x
170
Output
5
-914
-1000
193
x
198
Adj
6
913
-996
195
x
205
NC
7
800
-391
208
x
208
Input
8
254
-91
193
x
233
Output
9
603
514
226
x
185
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 2184.40 µm x 2362.20 µm
Die thickness: 254 µm nominal
Minimum pitch: 1827.53 µm
Interface materials.
Top metallization: Al 0.5% CU
Backside metallization: Gold
Glassivation.
Type: Vapox over metal (VOM only)
Thickness: 8 kÅ to 12 kÅ
Substrate: Silicon
Assembly related information.
Substrate potential: Output
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions – continued.
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 11-11-21
Approved sources of supply for SMD 5962-07229 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-0722901QXA
27014
LM117HVH-QML
5962-0722901QZA
3/
LM117HVWG-QML
5962-0722902QZA
27014
LM117HVGW-QML
5962-0722903QYA
27014
LM117HVK-QML
5962R0722901VXA
27014
LM117HVHRQMLV
5962R0722901VZA
3/
LM117HVWGRQMLV
5962R0722902VZA
27014
LM117HVGWRQMLV
5962R0722961VXA
27014
LM117HVHRLQMLV
5962R0722961VZA
3/
LM117HVWGRLQMLV
5962R0722962VZA
27014
LM117HVGWRLQMLV
5962R0722901V9A
27014
LM117HVH MDR
5962R0722961V9A
27104
LM117HVH MDE
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
27014
Vendor name
and address
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.