IGBTs 2PG401 Insulated Gate Bipolar Transistor ■ Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC(peak) = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications ● For flash-light for use in a camera 0.8±0.2 3.0±0.2 +0.3 10.0 –0. 1.0±0.2 1.1±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Unit VCES 400 V Gate to emitter voltage VGES ±8 V DC IC 5 A Pulse ICP 130 A Allowable power TC = 25°C dissipation Ta = 25°C 15 PC 0.4±0.1 2.3±0.2 Ratings Collector to emitter voltage Collector current 0.85±0.1 0.75±0.1 4.6±0.4 1 2 3 1: Gate 2: Collector 3: Emitter I Type Package W 1.3 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min Collector to emitter cut-off current ICES VCE = 320V, VGE = 0 Gate to emitter leakage current IGES VGE = ±8V, VCE = 0 Collector to emitter breakdown voltage VCES IC = 1mA, VGE = 0 400 Gate threshold voltage VGE(th) VCE = 10V, IC = 1mA 0.5 Collector to emitter saturation voltage VCE(sat) typ max Unit 10 µA ±1 µA V 1.5 VGE = 5V, IC = 5A 2 VGE = 5V, IC = 130A 10 VCE = 10V, VGE = 0, f = 1MHz 1930 V V Input capacitance (Common Emitter) Cies pF Turn-on time (delay time) td(on) 130 ns Rise time tr VCC = 300V, IC = 130A 1.4 µs Turn-off time (delay time) td(off) VGE = 5V, Rg = 25Ω 350 ns Fall time tf 1.5 µs 1