PANASONIC 2SK3049

Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
3.0±0.5
φ3.2±0.1
1.4±0.2
13.7±0.2
4.2±0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
Symbol
Unit
Drain to Source breakdown voltage
VDSS
600
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±5
A
Pulse
IDP
±10
A
EAS*
62.5
mJ
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
2.6±0.1
1.6±0.2
0.8±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Drain current
2.9±0.2
15.0±0.5
■ Applications
Parameter
4.6±0.2
9.9±0.3
1
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 5A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 480V, VGS = 0
100
µA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 3A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 3A
Diode forward voltage
VDSF
IDR = 5A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
600
V
2
0.85
1.7
5
V
1.5
Ω
3.4
S
−1.6
V
1200
pF
140
pF
40
pF
Turn-on time (delay time)
td(on)
20
ns
Rise time
tr
VDD = 200V, ID = 3A
30
ns
Turn-off time (delay time)
td(off)
VGS = 10V, RL = 66.6Ω
150
ns
Fall time
tf
50
ns
1
Power F-MOS FETs
2SK3049
PD  Ta
Area of safe operation (ASO)
100
60
10
t=1ms
3
DC
1
10ms
0.3
100ms
0.1
0.03
10
(1) TC=Ta
(2) Without heat sink
TC=25˚C
IAS max.
50
Avalanche current IAS (A)
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
IAS  L-load
40
(1)
30
20
10
3
62.5mJ
1
0.3
0.1
0.03
(2)
0.01
0
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
ID  VGS
Drain to source ON-resistance RDS(on) (Ω)
Drain current ID (A)
8
TC=100˚C
6
25˚C
0˚C
2
0
2
4
6
60
8
10
VGS=10V
TC=100˚C
2.0
1.5
25˚C
1.0
0˚C
0.5
0
2
4
6
Drain current ID (A)
Thermal resistance Rth(t) (˚C/W)
(1)
10
(2)
1
10–1
1
Time t (s)
2
10
VDS=25V
TC=0˚C
4
25˚C
100˚C
3
2
1
0
0
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10–1
3
| Yfs |  ID
Rth(t)  t
10–2
1
5
102
10–3
0.3
L-load (mH)
2.5
Gate to source voltage VGS (V)
10–2
10–4
0.01
0.1
80 100 120 140 160
RDS(on)  ID
VDS=25V
0
40
Ambient temperature Ta (˚C)
10
4
20
Forward transfer admittance |Yfs| (S)
1
10
102
103
104
8
0
2
4
6
Drain current ID (A)
8