Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply Symbol Unit Drain to Source breakdown voltage VDSS 600 V Gate to Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS* 62.5 mJ Avalanche energy capacity * Ratings Allowable power TC = 25°C dissipation Ta = 25°C 40 PD 2.6±0.1 1.6±0.2 0.8±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Drain current 2.9±0.2 15.0±0.5 ■ Applications Parameter 4.6±0.2 9.9±0.3 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 5mH, IL = 5A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 480V, VGS = 0 100 µA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 3A Forward transfer admittance | Yfs | VDS = 25V, ID = 3A Diode forward voltage VDSF IDR = 5A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 600 V 2 0.85 1.7 5 V 1.5 Ω 3.4 S −1.6 V 1200 pF 140 pF 40 pF Turn-on time (delay time) td(on) 20 ns Rise time tr VDD = 200V, ID = 3A 30 ns Turn-off time (delay time) td(off) VGS = 10V, RL = 66.6Ω 150 ns Fall time tf 50 ns 1 Power F-MOS FETs 2SK3049 PD Ta Area of safe operation (ASO) 100 60 10 t=1ms 3 DC 1 10ms 0.3 100ms 0.1 0.03 10 (1) TC=Ta (2) Without heat sink TC=25˚C IAS max. 50 Avalanche current IAS (A) Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C 30 Drain current ID (A) IAS L-load 40 (1) 30 20 10 3 62.5mJ 1 0.3 0.1 0.03 (2) 0.01 0 3 10 30 100 300 1000 0 Drain to source voltage VDS (V) ID VGS Drain to source ON-resistance RDS(on) (Ω) Drain current ID (A) 8 TC=100˚C 6 25˚C 0˚C 2 0 2 4 6 60 8 10 VGS=10V TC=100˚C 2.0 1.5 25˚C 1.0 0˚C 0.5 0 2 4 6 Drain current ID (A) Thermal resistance Rth(t) (˚C/W) (1) 10 (2) 1 10–1 1 Time t (s) 2 10 VDS=25V TC=0˚C 4 25˚C 100˚C 3 2 1 0 0 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 10–1 3 | Yfs | ID Rth(t) t 10–2 1 5 102 10–3 0.3 L-load (mH) 2.5 Gate to source voltage VGS (V) 10–2 10–4 0.01 0.1 80 100 120 140 160 RDS(on) ID VDS=25V 0 40 Ambient temperature Ta (˚C) 10 4 20 Forward transfer admittance |Yfs| (S) 1 10 102 103 104 8 0 2 4 6 Drain current ID (A) 8