PANASONIC 2SK3031

Power F-MOS FETs
2SK3031 (Tentative)
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
● Low-voltage drive
● High electrostatic breakdown voltage
unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Symbol
*
2.3±0.1
Ratings
Unit
VDSS
100
V
Gate to Source voltage
VGSS
±20
V
DC
ID
±15
A
Pulse
IDP
Avalanche energy capacity
Allowable power
TC = 25°C
dissipation
Ta = 25°C
EAS*
±30
A
11.25
mJ
4.6±0.1
1
2
1: Gate
2: Drain
3: Source
U Type Package
3
Internal Connection
20
PD
0.5±0.1
0.75±0.1
Drain to Source breakdown voltage
Drain current
1.0±0.2
1.0±0.1
0.1±0.05
0.93±0.1
0.8max
7.3±0.1
2.5±0.1
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
1.8±0.1
0.5±0.1
■ Applications
Parameter
2.3±0.1
W
1
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
D
G
S
L = 0.1mH, IL = 15A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
RDS(on)1
VGS = 10V, ID = 8A
Drain to Source ON-resistance
RDS(on)2
VGS = 4V, ID = 8A
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 8A
Diode forward voltage
VDSF
IDR = 15A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
min
typ
VDS = 80V, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
max
Unit
10
µA
±10
µA
100
V
1
4
2.5
V
90
135
mΩ
100
160
mΩ
7.5
S
−1.6
V
300
pF
190
pF
30
pF
20
ns
85
ns
330
ns
1440
ns
Turn-on time (delay time)
td(on)
Rise time
tr
VDD = 30V, ID = 8A
Fall time
tf
VGS = 10V, RL = 3.75Ω
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
6.25
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
125
°C/W
1