Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage (Drain open) VGSO ±7 V Internal Connection ID 100 mA Peak drain current Overall 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) SSMini6-F1 Package Drain-source surrender voltage Drain current Tr2 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) JEDEC: SOD-723 IDP 200 mA Drain-source surrender voltage VDSS −30 V Gate-source voltage (Drain open) VGSO ±7 V Drain current ID −100 mA Peak drain current IDP −200 mA Total power dissipation * PT 125 mW Junction temperature Tch 125 °C Storage temperature Tstg −55 to +125 °C (D1) (G2) 6 5 1 (S1) 0.10 max. 5˚ ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C 5˚ 0.55±0.05 • High-speed switching • Gate protection diode built-in • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 0 to 0.02 ■ Features (0.20) 5 1.60±0.05 6 Unit: mm 0.10±0.02 (S2) 4 2 3 (G1) (D2) Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm Publication date: August 2004 SJJ00303AED 1 UP04979 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Conditions Min Typ Max Unit VDSS ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 µA Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±10 µA Drain-source surrender voltage 50 Vth ID = 1.0 µA, VDS = 3.0 V Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 2.5 V Forward transfer admittance Yfs Gate threshold voltage 0.5 V 1.0 1.5 V 8 15 Ω 6 12 ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3.0 V 20 60 mS * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 200 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 200 ns Turn-on time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. • Tr2 Parameter Symbol Conditions Drain-source surrender voltage VDSS ID = −10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = −20 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 Gate threshold voltage Vth ID = −1.0 µA, VDS = −3.0 V RDS(on) Drain-source ON resistance Forward transfer admittance Yfs Min Typ Max Unit −1.0 µA −30 V ±10 µA −1.0 −1.5 V ID = −10 mA, VGS = −2.5 V 25 45 Ω ID = −10 mA, VGS = −4.0 V 15 30 − 0.5 ID = −10 mA, VDS = −3.0 V 35 mS Turn-on time * ton VDD = −3 V, VGS = 0 V to −3 V, ID = −10 mA 850 ns * toff VDD = −3 V, VGS = −3 V to 0 V, ID = −10 mA 850 ns Turn-off time 20 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. ton, toff test citcuit (Tr1) VOUT 100 µF VGS = 3.0 V 470 Ω 50 Ω 90% 10% VIN VDD = 3 V VOUT 10% 90% ton ton, toff test citcuit (Tr2) VOUT 280 Ω 10% 50 Ω 100 µF VGS VGS = 0 V to −3 V 90% VDD = −3 V 90% VOUT 10% ton 2 toff SJJ00303AED toff UP04979 Common characteristics chart PT Ta Total power dissipation PT (mW) 140 120 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (°C) Characteristics charts of Tr1 ID VDS ID VGS 60 VGS = 2.0 V 50 1.9 V 40 1.8 V 30 1.7 V 20 0 Ta = −25°C 250 25°C 200 85°C 150 100 1.6 V 50 10 1.5 V 0 0 2 4 6 8 10 12 1 Yfs VGS 140 120 100 80 60 40 20 3 4 5 6 0 50 100 150 200 250 Drain current ID (mA) RDS(on) VGS 40 VDS = 3 V 160 Drain-source ON resistance RDS(on) (Ω) Forward transfer admittance |Yfs | (mS) 2 Gate-source voltage VGS (V) 180 140 120 100 80 60 40 20 0 160 0 0 Drain-source voltage VDS (V) 0 VGS = 3 V Ta = 25°C VDS = 3 V Forward transfer admittance |Yfs | (mS) Ta = 25°C Yfs ID 180 300 Drain current ID (mA) Drain current ID (mA) 70 1 2 3 Gate-source voltage VGS (V) ID = 10 mA 30 20 Ta = 85°C 10 25°C −25°C 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) SJJ00303AED 3 UP04979 Characteristics charts of Tr2 ID VDS ID VGS Drain current ID (mA) 85°C −100 −2.75 V −2.50 V −40 −80 −60 −40 −20 0 25°C −120 −3.00 V −60 Ta = −25°C −140 −3.25 V −80 VDS = −3 V −160 −20 0 −2 −4 −6 −8 −10 −12 Drain-source voltage VDS (V) 0 −2 −4 Gate-source voltage VGS (V) Drain-source ON resistance RDS(on) (Ω) ID = −10 mA 40 30 Ta = 85°C 20 25°C 10 −25°C 0 0 −2 −4 −6 Gate-source voltage VGS (V) 4 −6 SJJ00303AED VDS = −3 V Ta = 25°C 60 50 40 30 20 10 0 0 RDS(on) VGS 50 Forward transfer admittance |Yfs | (mS) Ta = 25°C VGS = −3.50 V −100 Yfs VGS 70 −180 Drain current ID (mA) −120 0 −2 −4 −6 Gate-source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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