PANASONIC 2SK664

Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET
For switching
(0.425)
unit: mm
0.3+0.1
–0.0
0.15+0.10
–0.05
2.1±0.1
5°
1.25±0.10
● High-speed switching
● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.9+0.2
–0.1
■ Features
0.9±0.1
3
2
0.2±0.1
1
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Ratings
50
8
100
200
150
150
−55 to +150
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Unit
V
V
mA
mA
mW
°C
°C
0 to 0.1
■ Absolute Maximum Ratings (Ta = 25°C)
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3N
Internal Connection
D
G
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
min
typ
50
1.5
3.5
50
20
15
5
1
VDS = 5V, VGS = 0, f = 1kHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
max
10
50
10
20
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
ton, toff measurement circuit
Vout
VGS = 5V
50Ω
200Ω
100µF
*
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton*
toff*
90%
10%
Vin
VDD = 5V
Vout
10%
90%
ton
toff
Note) The part number in the parenthesis shows conventional part number.
289
Silicon MOS FETs (Small Signal)
2SK0664
PD  Ta
ID  VDS
60
Ta=25˚C
200
100
160
120
80
40
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
3.5V
20
0
3.0V
2.5V
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
6
4
Coss
Crss
3
10
100
Drain to source voltage VDS (V)
VIN  IO
100
VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
10
0
2
100
Ta=–25˚C
80
25˚C
75˚C
60
40
100
0
2
4
6
4
6
8
10
12
Gate to source voltage VGS (V)
RDS(on)  VGS
0
30
20
0
20
2
0
30
12
VDS=5V
Ta=25˚C
Drain current ID (mA)
8
1
Input voltage VIN (V)
10
40
ID  VGS
Ciss
290
8
120
VGS=0
f=1MHz
Ta=25˚C
10
6
VDS=5V
Ta=25˚C
50
Drain to source voltage VDS (V)
Ciss, Coss, Crss  VDS
12
4
8
10
12
Gate to source voltage VGS (V)
Drain to source ON-resistance RDS(on) (Ω)
0
Forward transfer admittance |Yfs| (mS)
120
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
| Yfs |  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
12
Gate to source voltage VGS (V)
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2001 MAR