SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)f, g 50 50 50 RDS(on) () Max. 0.0039 at VGS = 4.5 V 0.0042 at VGS = 3.7 V 0.0058 at VGS = 2.5 V • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Thermal Resistance PowerPAK Package with Small Size and 0.75 mm Profile • Typical ESD performance 3400 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 22.5 nC Thin PowerPAK® 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • Battery Switch / Load Switch • Power Management for Tablet PCs and Mobile Computing S 3 G 4 D 0.75 mm 8 D G D 7 D 6 D 5 Bottom View Ordering Information: SiS612EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TC = 70 °C 50g ID TA = 25 °C 24.6a, b 19.7a, b TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current L = 0.1 mH Maximum Power Dissipation 43.3 3.1a, b IAS 20 EAS 20 TC = 25 °C 52 TC = 70 °C 33 PD TA = 25 °C mJ W 3.7a, b 2.4a, b TA = 70 °C Operating Junction and Storage Temperature Range A 200 IS TA = 25 °C Single Pulse Avalanche Energy V 50g TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)c, d °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e t 10 s Symbol RthJA Typical 24 Maximum 33 Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 Unit °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited. S13-1675-Rev. A, 29-Jul-13 Document Number: 62874 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS612EDNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 μA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID= 250 μA VDS = VGS, ID = 1 mA V 18 mV/°C - 3.5 0.5 1.2 VDS = 0 V, VGS = ± 12 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V V μA 10 20 A VGS = 4.5 V, ID = 14 A 0.0032 0.0039 VGS = 3.7 V, ID = 14 A 0.0035 0.0042 VGS = 2.5 V, ID = 13 A 0.0041 0.0058 VDS = 10 V, ID = 14 A 50 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 2060 VDS = 10 V, VGS = 0 V, f = 1 MHz tr pF 365 VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A 46 70 22.5 34 4.1 VDD = 10 V, RL = 1 ID 10 A, VGEN = 4.5 V, Rg = 1 0.2 1 2 16 24 65 98 40 60 tf 12 20 td(on) 9 18 tr td(off) nC 5.3 f = 1 MHz td(on) td(off) 558 VDD = 10 V, RL = 1 ID 10 A, VGEN = 10 V, Rg = 1 tf 5 10 34 51 4 8 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 50 200 IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C A 0.75 1.2 V 22 44 ns 10 20 nC 11 11 ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1675-Rev. A, 29-Jul-13 Document Number: 62874 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS612EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.050 1.E-03 TJ = 25 °C 1.E-04 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.040 0.030 0.020 0.010 1.E-05 TJ = 150 °C 1.E-06 1.E-07 TJ = 25 °C 1.E-08 1.E-09 0.000 0 6 12 18 24 VGS - Gate-Source Voltage (V) 30 0 Gate Current vs. Gate-to-Source Voltage 5 10 15 VGS - Gate-to-Source Voltage (V) 20 Gate Current vs. Gate-to-Source Voltage 2 50 VGS = 5 V thru 2 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 40 30 VGS = 1.5 V 20 TC = 25 °C 1 0.5 TC = 125 °C 10 TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.3 Output Characteristics 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) 1.5 Transfer Characteristics 0.005 3000 Ciss VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2400 0.004 VGS = 3.7 V 0.003 VGS = 4.5 V 0.002 1800 1200 Coss 600 Crss 0.001 0 0 10 20 30 ID - Drain Current (A) 40 50 On-Resistance vs. Drain Current and Gate Voltage S13-1675-Rev. A, 29-Jul-13 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance Document Number: 62874 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS612EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.9 10 VGS - Gate-to-Source Voltage (V) ID = 14 A VDS = 5 V ID = 20 A 8 VGS = 4.5 V, 3.7 V, 2.5 V RDS(on) - On-Resistance (Normalized) 1.6 VDS = 10 V 6 4 1.3 1 VDS = 16 V 2 0.7 0 0 10 20 30 40 Qg - Total Gate Charge (nC) - 50 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.012 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.009 TJ = 125 °C 0.006 TJ = 25 °C 0.003 0.000 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1 10 On-Resistance vs. Gate-to-Source Voltage 50 ID = 250 μA 40 Power (W) VGS(th) (V) 0.8 0.6 30 20 0.4 10 0.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-1675-Rev. A, 29-Jul-13 125 150 0 0.01 0.1 1 10 100 600 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 62874 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS612EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 90 Limited by RDS(on)* 72 100 μs 10 ID - Drain Current (A) ID - Drain Current (A) 100 1 ms 10 ms 1 100 ms 10s, 1 s 0.1 DC TA = 25 °C 54 Package Limited 36 18 BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 0 0 Safe Operating Area 25 50 75 100 TC - Case Temperature (°C) 125 150 Current Derating* 64 Power (W) 48 32 16 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1675-Rev. A, 29-Jul-13 Document Number: 62874 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS612EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 81 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62874. S13-1675-Rev. A, 29-Jul-13 Document Number: 62874 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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