New Product SiS322DNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 6.9 nC Thin PowerPAK® 1212-8 APPLICATIONS S 3.30 mm 3.30 mm 1 • • • • S 2 S 3 G 4 D 0.75 mm 8 D Switch Mode Power Supplies Personal Computers and Servers Telecom Bricks VRM’s and POL D G 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiS322DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit Gate-Source Voltage VGS + 20, - 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 38.3 TC = 70 °C 30.6 TA = 25 °C ID 12.1a, b IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range A 70 18 IS 2.9a, b IAS 10 EAS mJ 5 TC = 25 °C Maximum Power Dissipation V 15.3a, b TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit 30 19.8 12.7 PD W 3.2a, b 3a, b - 55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature)c, d 260 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 31 5 Maximum 39 6.3 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiS322DNT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs 18.5 ID = 250 µA VGS(th) Temperature Coefficient V mV/°C - 5.2 2.4 V VDS = 0 V, VGS = + 20 V, - 16 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 1.2 30 µA A VGS 10 V, ID = 10 A 0.0060 0.0075 VGS 4.5 V, ID = 8 A 0.0096 0.0120 VDS = 15 V, ID = 10 A 54 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1000 287 VDS = 15 V, VGS = 0 V, f = 1 MHz 34 Crss/Ciss Ratio Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-Drain Charge Qgd Output Charge Qoss VDS = 15 V, VGS = 0 V Rg f = 1 MHz Gate Resistance tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 14.3 21.5 6.9 10.5 nC 2.8 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 7.8 0.4 1.6 3.2 15 30 10 20 15 30 7 14 td(on) 11 22 td(off) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf Fall Time 0.068 tf tr Rise Time Turn-Off Delay Time 0.034 1.6 td(on) Turn-On Delay Time pF 9 18 15 30 5 10 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 18 70 IS = 5 A, VGS 0 V 0.77 1.1 A V Body Diode Reverse Recovery Time trr 19 35 ns Body Diode Reverse Recovery Charge Qrr 7 14 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 10 9 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiS322DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 55 VGS = 10 V thru 4V 44 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 56 42 28 14 33 TC = 25 °C 22 11 TC = 125 °C VGS = 2 V 0 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 1200 0.016 960 5 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.012 0.008 720 Coss 480 240 0.004 VGS = 10 V Crss 0 0.000 0 14 28 42 ID - Drain Current (A) 56 0 70 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.7 ID = 10 A ID = 10 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 15 VGS = 10 V 1.5 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiS322DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 10 A 0.024 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.001 TJ = 125 °C 0.012 TJ = 25 °C 0.006 0.000 0.0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 50 0.2 40 - 0.1 Power (W) VGS(th) Variance (V) 0.018 ID = 5 mA - 0.4 10 30 20 ID = 250 μA - 0.7 - 1.0 - 50 10 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 ID - Drain Current (A) 10 IDM Limited 100 μs ID Limited 1 ms 1 Limited by R DS(on)* 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiS322DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 ID - Drain Current (A) 36 27 18 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 25 2.0 20 1.6 15 1.2 Power (W) Power (W) Current Derating* 10 5 0.8 0.4 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiS322DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63569. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 63569 S12-2185-Rev. A, 10-Sep-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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