SiSS27DN Datasheet

SiSS27DN
www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
ID (A)
0.0056 at VGS = -10 V
-50 e
0.0070 at VGS = -6 V
-50 e
0.0090 at VGS = -4.5 V
-50 e
-30
Qg (TYP.)
45 nC
• TrenchFET® Power MOSFET
• Low thermal resistance PowerPAK® package
with small size and low 0.75 mm profile
• 100 % Rg and UIS tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
PowerPAK® 1212-8S
D
D 6
5
D
7
D
8
APPLICATIONS
• Notebook computers and mobile
computing
S
- Adaptor switch
- Load switch
3.
3
m
m
1
3.3
mm
Top View
3
4 S
G
Bottom View
2
S
1
S
G
- DC/DC converter
- Power management
D
Ordering Information:
SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
ID
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
A
-47.5
-4 a,b
IAS
-25
31
mJ
57
PD
36
4.8 a,b
W
3 a,b
TA = 70 °C
Soldering Recommendations (Peak Temperature) c,d
-200
EAS
TC = 25 °C
Maximum Power Dissipation
-50 e
-23 a,b
-18.5 a,b
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
V
-50 e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-50 to 150
260
°C
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
S13-1161-Rev. A, 13-May-13
Document Number: 62847
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a,b
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
t  10 s
Steady State
TYPICAL
21
1.7
MAXIMUM
26
2.2
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 63 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VDS/TJ
VGS = 0 V, ID = - 250 μA
-30
-
-22
-
V
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
-1
-20
-
5.7
0.0046
0.0058
0.0073
52
-2.2
± 100
-1
-10
0.0056
0.0070
0.0090
-
0.6
-
5250
530
485
92
45
15
16
3
60
45
50
20
16
5
65
10
140
70
6
120
90
100
40
30
10
130
20
-
-0.8
30
21
16
14
-50 c
-200
-1.2
60
40
-
On-State Drain Current
a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current d
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VDS = -30 V, VGS = 0 V
VDS = -30 V, VGS = 0 V, TJ = 55 °C
VDS  -5 V, VGS = -10 V
VGS = -10 V, ID = -15 A
VGS = -6 V, ID = -10 A
VGS = -4.5 V, ID = -5 A
VDS = -15 V, ID = -15 A
VDS = -15 V, VGS = 0 V, f = 1 MHz
VDS = -15 V, VGS = -10 V, ID = -20 A
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = -15 V, VGS = -4.5 V, ID = -20 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
f = 1 MHz
VDD = -15 V, RL = 1.5 
ID  -10 A, VGEN = -4.5 V, Rg = 1 
VDD = -15 V, RL = 1.5 
ID  -10 A, VGEN = -10 V, Rg = 1 
IF = -10 A
IF = -10 A, dI/dt = 100 A/μs, TJ = 25 °C
mV/°C
V
nA
μA
A

S
pF
nC

ns
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
d. t = 100 μs.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1161-Rev. A, 13-May-13
Document Number: 62847
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 5 V
VGS = 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
12
TC = 25 °C
8
4
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0120
3.0
3.5
7000
0.0090
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
6000
VGS = 4.5 V
VGS = 6 V
0.0060
VGS = 10 V
0.0030
5000
Ciss
4000
3000
2000
Coss
1000
Crss
0.0000
0
0
20
40
60
80
100
0
5
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
10
ID = 20 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
VGS = 10 V
VDS = 10 V
6
VDS = 5 V
VDS = 16 V
4
2
ID = 15 A
1.4
VGS = 6 V
1.2
VGS = 4.5 V
1.0
0.8
0.6
0
0
20
40
60
Qg - Total Gate Charge (nC)
Gate Charge
S13-1161-Rev. A, 13-May-13
80
100
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62847
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15 A
0.016
TJ = 150 °C
10
1
TJ = 25 °C
0.012
TJ = 125 °C
0.008
TJ = 25 °C
0.004
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
100
1.8
80
Power (W)
VGS(th) (V)
1.6
1.4
ID = 250 μA
60
40
1.2
20
1.0
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S13-1161-Rev. A, 13-May-13
Document Number: 62847
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
100
60
50
60
Power (W)
ID - Drain Current (A)
80
Package Limited
40
40
30
20
20
10
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1161-Rev. A, 13-May-13
Document Number: 62847
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = RthJA = 63 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62847.
S13-1161-Rev. A, 13-May-13
Document Number: 62847
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000