Si5415AEDU Datasheet

Si5415AEDU
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
ID (A)a
0.0096 at VGS = - 4.5 V
- 25
- 20
0.0132 at VGS = - 2.5 V
- 25
0.0220 at VGS = - 1.8 V
-7
Qg (Typ.)
43 nC
PowerPAK ChipFET Single
1
2
APPLICATIONS
D
3
D
D
4
G
D
7
S
6
S
5
1.9
S
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- Battery Switch
- Load Switch
- Power Management
D
D
8
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® ChipFET Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg and UIS Tested
• Typical ESD Protection: 5500 V (HBM)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
mm
G
Marking Code
Bottom View
LC
Ordering Information:
Si5415AEDU-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
Lot Traceability
and Date Code
D
P-Channel MOSFET
Part # Code
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
- 25a
TC = 70 °C
- 25a
TA = 25 °C
ID
Continuous Source-Drain Diode Current
- 12b, c
Single Avalanche Current
Single Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
- 25a
IS
- 2.6b, c
IAS
- 15
EAS
11
mJ
31
20
PD
W
3.1b, c
2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 70
TC = 25 °C
Maximum Power Dissipation
V
- 15b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Unit
TJ, Tstg
- 50 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t5s
RthJA
34
40
Steady State
RthJC
3
4
Unit
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
S13-1673-Rev. A, 29-Jul-13
Document Number: 62889
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si5415AEDU
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 μA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
- 11
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
±2
VDS = 0 V, VGS = ± 4.5 V
± 0.2
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 4.5 V
RDS(on)
gfs
mV/°C
2.8
V
μA
- 10
- 10
A
VGS = - 4.5 V, ID = - 10 A
0.0081
0.0096
VGS = - 2.5 V, ID = - 5 A
0.0110
0.0132
VGS = - 1.8 V, ID = - 2 A
0.0170
0.0220
VGS = - 10 V, ID = - 10 A
47

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4300
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 14 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 14 A
80
120
43
65
7
nC
11.4
Rg
tr
pF
400
f = 1 MHz
td(on)
td(off)
445
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
0.6
3.3
6.6
30
60
45
90
75
150
tf
25
50
td(on)
12
25
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 8 V, Rg = 1 
tr
td(off)
tf
5
10
80
160
20
40

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 25
- 70
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/μs, TJ = 25 °C
A
- 0.8
- 1.2
V
35
70
ns
21
40
nC
20
15
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1673-Rev. A, 29-Jul-13
Document Number: 62889
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si5415AEDU
www.vishay.com
Vishay Siliconix
20.00
20
16.00
16
12.00
ID - Drain Current (A)
IGSS - Gate Current (mA)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TJ = 25 °C
8.00
12
8
TC = 25 °C
4.00
4
0.00
0
TC = 125 °C
TC = - 55 °C
0
4
8
12
16
0.0
VGS - Gate-Source Voltage (V)
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
10-2
0.050
10-3
RDS(on) - On-Resistance (Ω)
IGSS - Gate Current (A)
0.040
10-4
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
VGS = 1.8 V
0.030
0.020
VGS = 2.5 V
0.010
10-8
VGS = 4.5 V
10
-9
0.000
0
4
8
12
16
0
20
40
60
80
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Gate Current vs. Gate-Source Voltage
On-Resistance vs. Drain Current and Gate Voltage
80
7000
VGS = 5 V thru 2.5 V
6000
VGS = 2 V
C - Capacitance (pF)
ID - Drain Current (A)
60
40
20
5000
Ciss
4000
3000
2000
Coss
1000
Crss
0
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
S13-1673-Rev. A, 29-Jul-13
2.5
3.0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62889
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si5415AEDU
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
ID = 14 A
VDS = 10 V
VDS = 5 V
4
ID = 10 A
0.040
6
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
8
VDS = 16 V
2
0.030
0.020
TJ = 125 °C
0.010
TJ = 25 °C
0.000
0
0
20
40
60
0
80
1
Qg - Total Gate Charge (nC)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Gate-to-Source Voltage
1.4
0.8
0.7
1.3
0.6
1.2
1.1
VGS = 1.8 V; ID = 5 A
VGS(th) (V)
RDS(on) - On-Resistance (Normalized)
VGS = 4.5 V, 2.5 V ; ID = 10 A
ID = 250 μA
0.4
1.0
0.3
0.9
0.2
0.1
0.8
- 50
- 25
0
25
50
75
100
125
- 50
150
- 25
0
25
50
75
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
100
125
150
50
100
TJ = 150 °C
40
10
Power (W)
IS - Source Current (A)
0.5
TJ = 25 °C
30
20
1
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.001
0.01
0.1
1
10
100
1000
VSD - Source-to-Drain Voltage (V)
Time (s)
Soure-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
S13-1673-Rev. A, 29-Jul-13
Document Number: 62889
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si5415AEDU
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
10 s
1s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
60
35
30
Power Dissipation (W)
ID - Drain Current (A)
50
40
30
Package Limited
20
10
25
20
15
10
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating






* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1673-Rev. A, 29-Jul-13
Document Number: 62889
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si5415AEDU
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
10-4
Single Pulse
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case



















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62837.
S13-1673-Rev. A, 29-Jul-13
Document Number: 62889
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® ChipFET® Case Outline
D
(7)
(6)
(5)
(1)
(2)
(3)
(4)
E
(8)
Pin #1
indicator
Side view of single
e
b
H
D1
D(2)
D2
K
D(3)
L
G(4)
K1
D2
SI(1)
GI(2)
S2(3)
D1(8)
D1(7)
D2(6)
Detail Z
G2(4)
K2
L
D(1)
A1
C
A
Z
Side view of dual
E1
E2
E3
H
D3
D(8)
D(7)
D(6)
S(5)
K3
Backside view of dual pad
Backside view of single pad
DIM.
D2(5)
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.85
0.028
0.030
0.033
A1
0
-
0.05
0
-
0.002
b
0.25
0.30
0.35
0.010
0.012
0.014
C
0.15
0.20
0.25
0.006
0.008
0.010
D
2.92
3.00
3.08
0.115
0.118
0.121
D1
1.75
1.87
2.00
0.069
0.074
0.079
D2
1.07
1.20
1.32
0.042
0.047
0.052
D3
0.20
0.25
0.30
0.008
0.010
0.012
E
1.82
1.90
1.98
0.072
0.075
0.078
E1
1.38
1.50
1.63
0.054
0.059
0.064
E2
0.92
1.05
1.17
0.036
0.041
0.046
E3
0.45
0.50
0.55
0.018
0.020
0.022
e
0.65 BSC
0.026 BSC
H
0.15
0.20
0.25
0.006
0.008
0.010
K
0.25
-
-
0.010
-
-
K1
0.30
-
-
0.012
-
-
K2
0.20
-
-
0.008
-
-
K3
0.20
-
-
0.008
-
-
L
0.30
0.35
0.40
0.012
0.014
0.016
C14-0630-Rev. E, 21-Jul-14
DWG: 5940
Note
• Millimeters will govern
Document Number: 73203
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 21-Jul-14
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single
0.225
(0.009)
0.350
(0.014)
0.650
(0.026)
0.200
(0.008)
0.300
(0.012)
0.300
(0.012)
0.100
(0.004)
1.500
(0.059)
1.900
(0.075)
0.250
(0.010)
0.500
(0.020)
0.350
(0.014)
0.350
(0.014)
1.870
(0.074)
0.305
(0.012)
2.575
(0.101)
Recommended Minimum Pads
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 69948
Revision: 21-Jan-08
www.vishay.com
9
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Revision: 02-Oct-12
1
Document Number: 91000