Si4823DY Datasheet

Si4823DY
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.108 at VGS = - 4.5 V
- 4.1
0.175 at VGS = - 2.5 V
- 3.3
VDS (V)
- 20
Qg (Typ.)
4 nC
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Schottky
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)a
30
0.5 at 1 A
2
• Portable Devices
- Ideal for Boost Circuits
- Ideal for Book Circuits
SO-8
A
1
8
A
2
7
K
S
K
D
A
K
S
3
6
D
G
4
5
D
G
Top View
Ordering Information: Si4823DY-T1-E3 (Lead (Pb)-free)
Si4823DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
VDS
- 20
Reverse Voltage (Schottky)
VKA
30
Gate-Source Voltage (MOSFET)
VGS
± 12
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
ID
TA = 25 °C
- 3.3
- 3.3b, c
- 2.6b, c
IDM
TC = 25 °C
IS
- 15
- 2.3
IF
- 2b
Pulsed Forward Current (MOSFET)
IFM
-3
TC = 25 °C
2.8
TC = 70 °C
1.8
TA = 25 °C
1.7b, c
TA = 70 °C
TC = 25 °C
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Document Number: 64715
S10-1051-Rev. C, 03-May-10
PD
1.1b, c
2.7
TC = 70 °C
1.7
TA = 25 °C
1.6b, c
TA = 70 °C
1.0b, c
TJ, Tstg
A
- 1.4b, c
Average Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
V
- 4.1
TA = 70 °C
Pulsed Drain Current (MOSFET)
Unit
- 55 to 150
W
°C
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Si4823DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)b, e
Symbol
RthJA
Typical
Maximum
60
71.5
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, f
RthJF
35
45
RthJA
63
78
Maximum Junction-to-Foot (Drain) (Schottky)
RthJF
39
47
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Based on TC = 25 °C.
e. Maximum under steady state conditions is 110 °C/W.
f. Maximum under steady state conditions is 115 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-State Resistance
ID(on)
a
Forward Transconductancea
RDS(on)
gfs
V
- 20
mV/°C
3
- 0.6
- 1.5
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
- 15
µA
A
VGS = - 4.5 V, ID = - 3.3 A
0.090
0.108
VGS = - 2.5 V, ID = - 2.6 A
0.140
0.175
VDS = - 10 V, ID = - 3.3 A
6
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 3.3 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A
660
80
160
57
114
8
12
4
6
0.8
VDD = - 10 V, RL = 3.8 Ω
ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω
1.2
6
12
3
6
10
20
16
24
tf
8
15
td(on)
18
27
40
60
td(off)
tr
td(off)
pF
nC
1.4
f = 1 MHz
td(on)
tr
330
VDD = - 10 V, RL = 3.8 Ω
ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
18
27
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 6.2
- 15
IS = - 2.6 A, VGS = 0 V
IF = - 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
23
35
ns
14
21
nC
11
12
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
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Document Number: 64715
S10-1051-Rev. C, 03-May-10
Si4823DY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Forward Voltage Drop
Test Conditions
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Min.
Typ.
Max.
IF = 1 A
0.46
0.50
IF = 1 A, TJ = 125 °C
0.41
0.50
VR = 30 V
0.025
0.1
VR = 30 V, TJ = 85 °C
0.6
6
VR = 30 V, TJ = 125 °C
5
25
VR = 15 V
35
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.0
15
VGS = 10 V thru 4 V
1.6
ID - Drain Current (A)
I D - Drain Current (A)
12
VGS = 3 V
9
6
TC = - 55 °C
1.2
0.8
TC = 25 °C
0.4
3
TC = 125 °C
VGS = 2 V
0.0
0.0
0
0
1
2
3
4
5
0.4
0.8
1.2
1.6
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
600
VGS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
500
0.16
0.12
VGS = 4.5 V
Ciss
400
300
200
0.08
Coss
100
Crss
0
0.04
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 64715
S10-1051-Rev. C, 03-May-10
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
1.5
VGS = 10 V, ID = 3.3 A
8
VDS = 10 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 3.3 A
6
VDS = 16 V
4
1.3
1.1
VGS = 4.5 V, ID = 2.6 A
0.9
2
0
0.0
1.5
3.0
4.5
6.0
7.5
0.7
- 50
9.0
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.20
10
ID = 3.3 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.16
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.12
TJ = 125 °C
0.08
TJ = 25 °C
0.04
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD - Source-to-Drain Voltage (V)
3
6
9
12
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
50
40
Power (W)
V GS(th) (V)
1.1
ID = 250 µA
0.9
30
20
0.7
10
0.5
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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4
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 64715
S10-1051-Rev. C, 03-May-10
Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
5
3.5
3.0
2.5
3
Power (W)
I D - Drain Current (A)
4
2
2.0
1.5
1.0
1
0.5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
Current Derating*
1.25
Power (W)
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Document Number: 64715
S10-1051-Rev. C, 03-May-10
150
* The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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Si4823DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 64715
S10-1051-Rev. C, 03-May-10
Si4823DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
10
I F - Forward Current (A)
I R - Reverse Current (mA)
10
1
VR = 30 V
10-1
VR = 10 V
10-2
10-3
1
TJ = 150 °C
TJ = 25 °C
10-4
10-5
- 50
- 25
0
25
50
100
75
125
0.1
0.0
150
0.1
0.2
T J - Junction Temperature (°C)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
C T - Junction Capacitance (pF)
250
200
150
100
50
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 64715
S10-1051-Rev. C, 03-May-10
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Si4823DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Notes:
0.1
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA
= 92 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.02
0.05
0.1
0.1
0.05
0.02
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64715.
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Document Number: 64715
S10-1051-Rev. C, 03-May-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000