Si4823DY Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY APPLICATIONS VKA (V) Vf (V) Diode Forward Voltage IF (A)a 30 0.5 at 1 A 2 • Portable Devices - Ideal for Boost Circuits - Ideal for Book Circuits SO-8 A 1 8 A 2 7 K S K D A K S 3 6 D G 4 5 D G Top View Ordering Information: Si4823DY-T1-E3 (Lead (Pb)-free) Si4823DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage (MOSFET) VDS - 20 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS ± 12 TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ID TA = 25 °C - 3.3 - 3.3b, c - 2.6b, c IDM TC = 25 °C IS - 15 - 2.3 IF - 2b Pulsed Forward Current (MOSFET) IFM -3 TC = 25 °C 2.8 TC = 70 °C 1.8 TA = 25 °C 1.7b, c TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Document Number: 64715 S10-1051-Rev. C, 03-May-10 PD 1.1b, c 2.7 TC = 70 °C 1.7 TA = 25 °C 1.6b, c TA = 70 °C 1.0b, c TJ, Tstg A - 1.4b, c Average Forward Current (Schottky) Maximum Power Dissipation (MOSFET) V - 4.1 TA = 70 °C Pulsed Drain Current (MOSFET) Unit - 55 to 150 W °C www.vishay.com 1 Si4823DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, e Symbol RthJA Typical Maximum 60 71.5 Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f RthJF 35 45 RthJA 63 78 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 39 47 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Based on TC = 25 °C. e. Maximum under steady state conditions is 110 °C/W. f. Maximum under steady state conditions is 115 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-State Resistance ID(on) a Forward Transconductancea RDS(on) gfs V - 20 mV/°C 3 - 0.6 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V - 15 µA A VGS = - 4.5 V, ID = - 3.3 A 0.090 0.108 VGS = - 2.5 V, ID = - 2.6 A 0.140 0.175 VDS = - 10 V, ID = - 3.3 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 3.3 A VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A 660 80 160 57 114 8 12 4 6 0.8 VDD = - 10 V, RL = 3.8 Ω ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω 1.2 6 12 3 6 10 20 16 24 tf 8 15 td(on) 18 27 40 60 td(off) tr td(off) pF nC 1.4 f = 1 MHz td(on) tr 330 VDD = - 10 V, RL = 3.8 Ω ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω tf 18 27 10 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 6.2 - 15 IS = - 2.6 A, VGS = 0 V IF = - 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 23 35 ns 14 21 nC 11 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 64715 S10-1051-Rev. C, 03-May-10 Si4823DY Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop Test Conditions VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Min. Typ. Max. IF = 1 A 0.46 0.50 IF = 1 A, TJ = 125 °C 0.41 0.50 VR = 30 V 0.025 0.1 VR = 30 V, TJ = 85 °C 0.6 6 VR = 30 V, TJ = 125 °C 5 25 VR = 15 V 35 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.0 15 VGS = 10 V thru 4 V 1.6 ID - Drain Current (A) I D - Drain Current (A) 12 VGS = 3 V 9 6 TC = - 55 °C 1.2 0.8 TC = 25 °C 0.4 3 TC = 125 °C VGS = 2 V 0.0 0.0 0 0 1 2 3 4 5 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 600 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 500 0.16 0.12 VGS = 4.5 V Ciss 400 300 200 0.08 Coss 100 Crss 0 0.04 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Document Number: 64715 S10-1051-Rev. C, 03-May-10 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 Si4823DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1.5 VGS = 10 V, ID = 3.3 A 8 VDS = 10 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 3.3 A 6 VDS = 16 V 4 1.3 1.1 VGS = 4.5 V, ID = 2.6 A 0.9 2 0 0.0 1.5 3.0 4.5 6.0 7.5 0.7 - 50 9.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.20 10 ID = 3.3 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.16 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.12 TJ = 125 °C 0.08 TJ = 25 °C 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 3 6 9 12 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 50 40 Power (W) V GS(th) (V) 1.1 ID = 250 µA 0.9 30 20 0.7 10 0.5 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 64715 S10-1051-Rev. C, 03-May-10 Si4823DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 5 3.5 3.0 2.5 3 Power (W) I D - Drain Current (A) 4 2 2.0 1.5 1.0 1 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating, Junction-to-Case Current Derating* 1.25 Power (W) 1.00 0.75 0.50 0.25 0.00 0 25 50 75 100 125 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Document Number: 64715 S10-1051-Rev. C, 03-May-10 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 Si4823DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 6 Document Number: 64715 S10-1051-Rev. C, 03-May-10 Si4823DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 VR = 30 V 10-1 VR = 10 V 10-2 10-3 1 TJ = 150 °C TJ = 25 °C 10-4 10-5 - 50 - 25 0 25 50 100 75 125 0.1 0.0 150 0.1 0.2 T J - Junction Temperature (°C) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop C T - Junction Capacitance (pF) 250 200 150 100 50 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 64715 S10-1051-Rev. C, 03-May-10 www.vishay.com 7 Si4823DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.02 0.05 0.1 0.1 0.05 0.02 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64715. www.vishay.com 8 Document Number: 64715 S10-1051-Rev. C, 03-May-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000