SiA448DJ Datasheet

New Product
SiA448DJ
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
ID (A)
0.0150 at VGS = 4.5 V
12
0.0166 at VGS = 2.5 V
12
0.0200 at VGS = 1.8 V
12
0.0324 at VGS = 1.5 V
12
a
Qg (Typ.)
13 nC
PowerPAK SC-70-6L-Single
APPLICATIONS
1
Marking Code
D
2
D
AQX
3
6
Part # code
G
D
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
XXX
D
• For Smart Phones and Mobile
Computing
- Load Switches
- DC/DC Converters
G
5
S
D
2.05 mm
S
Lot Traceability
and Date code
2.05 mm
4
S
N-Channel MOSFET
Ordering Information:
SiA448DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
20
Gate-Source Voltage
VGS
±8
TC = 70 °C
TA = 25 °C
12a
ID
12a, b, c
9.9b, c
30
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
2.9b, c
19.2
12.3
PD
Soldering Recommendations (Peak
W
3.5b, c
2.2b, c
- 55 to 150
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
12a
IS
TC = 25 °C
Maximum Power Dissipation
V
12a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
Unit
Temperature)d, e
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63918
S12-1138-Rev. A, 21-May-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
21
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1
V
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
a
gfs
Forward Transconductance
VDS  5 V, VGS = 4.5 V
-3
0.4
12
µA
A
VGS = 4.5 V, ID = 12.4 A
0.0125
0.0150
VGS = 2.5 V, ID = 11.8 A
0.0138
0.0166
VGS = 1.8 V, ID = 10.8 A
0.0160
0.0200
VGS = 1.5 V, ID = 3 A
0.0180
0.0324
VDS = 10 V, ID = 12.4 A
70

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1380
VDS = 1 V, VGS = 0 V, f = 1 MHz
75
VDS = 10 V, VGS = 8 V, ID = 12.4 A
VDS = 10 V, VGS = 4.5 V, ID = 12.4 A
tr
Rise Time
Fall Time
Turn-On Delay Time
Turn-Off Delay Time
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 8 V, Rg = 1 
0.6
3.3
6.6
7
14
20
41
tf
6
12
td(on)
8
16
13
20
30
45
7
14
td(off)
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
Fall Time
2.1
10
tr
Rise Time
35
20
27
td(off)
Turn-Off Delay Time
23
13
nC
1.4
f = 1 MHz
td(on)
Turn-On Delay Time
pF
190

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
12c
TC = 25 °C
30
IS = 10 A, VGS = 0 V
A
0.8
1.2
Body Diode Reverse Recovery Time
trr
8
16
ns
Body Diode Reverse Recovery Charge
Qrr
1
3
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
4.5
3.5
V
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 63918
S12-1138-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
30
VGS = 5 V thru 2 V
VGS = 1.5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
6
6
TC = 25 °C
4
2
TC = 125 °C
VGS = 1 V
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
0
2
0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
1.5
Transfer Characteristics
0.030
1800
0.024
1350
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 1.5 V
VGS = 1.8 V
0.018
VGS = 2.5 V
0.012
900
450
VGS = 4.5 V
Coss
Crss
0.006
0
0
6
12
18
ID - Drain Current (A)
24
30
0
5
10
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.6
VGS = 4.5 V
RDS(on) - On-Resistance (Normalized)
ID = 12.4 A
VGS - Gate-to-Source Voltage (V)
20
6
VDS = 16 V
VDS = 10 V
4
VDS = 5 V
2
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63918
S12-1138-Rev. A, 21-May-12
25
ID = 12.4 A
1.4
VGS = 2.5 V
1.1
0.9
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 12.4 A
TJ = 150 °C
10
1
0.1
0.024
TJ = 125 °C
0.018
TJ = 25 °C
0.012
0.006
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Soure-Drain Diode Forward Voltage
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
30
0.8
ID = 250 μA
25
0.6
Power (W)
VGS(th) (V)
20
0.4
15
10
0.2
5
0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
Threshold Voltage
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 63918
S12-1138-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
ID - Drain Current (A)
28
21
14
Package Limited
7
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
Current Derating*
25
2.0
20
Power (W)
Power (W)
1.5
15
10
1.0
0.5
5
0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63918
S12-1138-Rev. A, 21-May-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
t1
t2
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63918.
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For technical questions, contact: [email protected]
Document Number: 63918
S12-1138-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000