SiA527DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) () Max. 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.041 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V 0.174 at VGS = - 1.5 V ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 3.5 -1 Qg (Typ.) 5.6 nC 10.5 nC PowerPAK SC-70-6 Dual 1 S1 • TrenchFET® Power MOSFETs • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Portable Devices Such as Smart Phones, Tablet PCs and Mobile Computing - Load Switches - Power Management - DC/DC Converters 2 G1 D1 3 D1 D1 6 S2 Marking Code D2 EJX D2 G2 XXX G2 5 2.05 mm 4 S2 G1 2.05 mm Part # code Lot Traceability and Date Code Ordering Information: SiA527DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 100 µs) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d,e IS PD TJ, Tstg N-Channel P-Channel 12 - 12 ±8 4.5a 4.5a 4.5a,b,c 4.5a,b,c 20 4.5a 1.6b,c 7.8 5 1.9b,c 1.2b,c - 4.5a - 4.5a - 4.5a,b,c - 4.4b,c - 15 - 4.5a - 1.6b,c 7.8 5 1.9b,c 1.2b,c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS N-Channel P-Channel Typ. Max. Typ. Max. Parameter Symbol Unit RthJA Maximum Junction-to-Ambientb,f t5s 52 65 52 65 °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 12.5 16 12.5 16 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 12 VGS = 0 V, ID = - 250 µA P-Ch - 12 V ID = 250 µA N-Ch 12 ID = - 250 µA P-Ch - 3.6 ID = 250 µA N-Ch - 2.5 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.4 1 VDS = VGS, ID = - 250 µA P-Ch - 0.4 -1 VDS = 0 V, VGS = ± 8 V 2.4 N-Ch ± 100 P-Ch ± 100 VDS = 12 V, VGS = 0 V N-Ch 1 VDS = - 12 V, VGS = 0 V P-Ch -1 VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 12 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS 5 V, VGS = 4.5 V N-Ch 15 VDS - 5 V, VGS = - 4.5 V P-Ch - 10 VGS = 4.5 V, ID = 5 A V nA µA A N-Ch 0.024 0.029 VGS = - 4.5 V, ID = - 4.3 A P-Ch 0.033 0.041 VGS = 2.5 V, ID = 4.6 A N-Ch 0.028 0.034 VGS = - 2.5 V, ID = - 3.6 A P-Ch 0.049 0.060 VGS = 1.8 V, ID = 4.1 A N-Ch 0.032 0.044 VGS = - 1.8 V, ID = - 1.5 A P-Ch 0.070 0.110 VGS = 1.5 V, ID = 2 A N-Ch 0.042 0.065 VGS = - 1.5 V, ID = - 1 A P-Ch 0.095 0.174 VDS = 6 V, ID = 5 A N-Ch 21 VDS = - 6 V, ID = - 4.6 A P-Ch 12 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = 6 V, VGS = 8 V, ID = 6.5 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg VDS = - 6 V, VGS = - 8 V, ID = - 5.6 A Rg 500 P-Ch 1500 N-Ch 160 P-Ch 260 N-Ch 100 P-Ch 250 N-Ch 9.7 15 P-Ch 17 26 5.6 8.5 16 P-Ch 10.5 N-Ch 0.72 P-Channel VDS = - 6 V, VGS = - 4.5 V, ID = - 5.6 A P-Ch 2.3 N-Ch 0.74 P-Ch f = 1 MHz pF N-Ch N-Channel VDS = 6 V, VGS = 4.5 V, ID = 6.5 A Qgs Qgd N-Ch nC 2.5 N-Ch 0.7 3.5 7 P-Ch 1.1 5.5 11 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. www.vishay.com 2 For technical questions, contact:: [email protected] Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time N-Channel VDD = 6 V, RL = 1.2 ID 5.2 A, VGEN = 4.5 V, Rg = 1 P-Channel VDD = - 6 V, RL = 1.3 ID - 4.5 A, VGEN = - 4.5 V, Rg = 1 N-Channel VDD = 6 V, RL = 1.2 ID 5.2 A, VGEN = 8 V, Rg = 1 tf P-Channel VDD = - 6 V, RL = 1.3 ID - 4.5 A, VGEN = - 8 V, Rg = 1 Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current (t = 100 µs) ISM td(off) Turn-Off Delay Time Fall Time N-Ch 10 15 P-Ch 22 35 N-Ch 10 15 P-Ch 22 35 N-Ch 22 30 P-Ch 32 50 N-Ch 10 15 P-Ch 15 25 N-Ch 5 10 15 P-Ch 10 N-Ch 10 15 P-Ch 10 15 N-Ch 18 30 P-Ch 30 40 N-Ch 10 15 P-Ch 12 20 ns Drain-Source Body Diode Characteristics VSD Body Diode Voltage 4.5 P-Ch - 4.5 N-Ch 20 P-Ch - 15 IS = 5.2 A, VGS = 0 V N-Ch 0.85 1.2 IS = - 4.5 A, VGS = 0 V P-Ch - 0.87 - 1.2 trr Body Diode Reverse Recovery Time N-Ch Body Diode Reverse Recovery Charge Qrr N-Channel IF = 5.2 A, dI//dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 4.5 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb N-Ch 20 40 P-Ch 30 60 N-Ch 5 10 P-Ch 15 30 N-Ch 8 P-Ch 15 N-Ch 12 P-Ch 15 A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 5 VGS = 5 V thru 2 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 VGS = 1.5 V 10 3 2 TC = 25 °C 5 1 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 800 0.08 VGS = 1.5 V VGS = 1.8 V 0.06 0.04 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.3 VDS - Drain-to-Source Voltage (V) 0.10 600 Ciss 400 Coss 200 0.02 VGS = 4.5 V Crss 0.00 0 0 5 10 15 20 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 12 1.6 ID = 6.5 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) TC = - 55 °C 0 0.0 6 VDS = 3 V 4 VDS = 9.6 V VDS = 6 V 2 0 0 4 8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 1.5 1.4 1.3 VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5 A 1.2 1.1 VGS = 1.5 V; ID = 2 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact:: [email protected] Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.07 TJ = 150 °C 10 TJ = 25 °C 1 0.06 ID = 2 A; TJ = 125 °C ID = 5 A; TJ = 125 °C 0.05 0.04 ID = 5 A; TJ = 25 °C 0.03 ID = 2 A; TJ = 25 °C 0.02 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 20 0.7 15 Power (W) VGS(th) (V) 0.6 ID = 250 µA 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms, 1 s 10 s, DC 0.1 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact:: [email protected] Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 15 VGS = 5 V thru 2.5 V 8 2V ID - Drain Current (A) ID - Drain Current (A) 12 9 6 6 4 TC = 25 °C 1.5 V 2 3 TC = 125 °C 1V 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 0.5 TC = - 55 °C 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1500 0.16 VGS = 1.8 V 0.14 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 0.12 0.10 0.08 VGS = 2.5 V 0.06 600 Coss 300 VGS = 4.5 V 0.04 Ciss 900 Crss 0.02 0 0 3 6 9 12 15 0 3 ID - Drain Current (A) 6 On-Resistance vs. Drain Current and Gate Voltage 1.4 RDS(on) - On-Resistance (Normalized) ID = 5.6 A VGS - Gate-to-Source Voltage (V) 12 Capacitance 8 6 VDS = 9.6 V 4 VDS = 3 V VDS = 6 V 2 0 9 VDS - Drain-to-Source Voltage (V) 0 www.vishay.com 8 3 6 9 12 15 18 VGS = 4.5 V, 2.5 V ID = 4.3 A 1.3 1.2 1.1 VGS = 1.8 V ID = 1.5 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature For technical questions, contact:: [email protected] Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.15 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.12 10 TJ = 150 °C TJ = 25 °C 1 ID = 5.5 A, TJ = 125 °C 0.09 0.06 ID = 1.5 A, TJ = 125 °C 0.03 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.00 1.2 ID = 5.5 A, TJ = 25 °C ID = 1.5 A, TJ = 25 °C 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.9 0.8 15 ID = 250 μA Power (W) VGS(th) - (V) 0.7 0.6 10 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 14 6 10 Power Dissipation (W) ID - Drain Current (A) 12 8 6 Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For technical questions, contact:: [email protected] Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA527DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 Single Pulse 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64162. Document Number: 64162 S13-1669-Rev. A, 29-Jul-13 For technical questions, contact:: [email protected] www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000