New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5a 0.063 at VGS = 1.8 V 4.5a 0.070 at VGS = - 4.5 V - 4.5a 0.100 at VGS = - 2.5 V - 4.5a 0.140 at VGS = - 1.8 V a - 4.5 4.5 nC 5 nC RoHS COMPLIANT APPLICATIONS • Load Switch for Portable Devices PowerPAK SC-70-6 Dual 1 S1 S2 D1 2 G1 3 D2 D1 D1 6 Marking Code G2 D2 EAX Part # code G2 5 2.05 mm 4 2.05 mm S2 G1 XXX Lot Traceability and Date code Ordering Information: SiA511DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Source Drain Current Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ±8 ID IS PD 4.5a, b, c 4.5a, b, c 20 4.5a - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a 1.6b, c 6.5 5 - 1.6b, c 6.5 5 1.9b, c 1.2b, c 1.9b, c 1.2b, c 4.5a TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e P-Channel - 12 4.5a IDM Pulsed Drain Current N-Channel 12 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS N-Channel Parameter b, f t≤5s Symbol RthJA RthJC P-Channel Typ. Max. Typ. Max. 52 12.5 65 16 52 12.5 65 16 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 1 New Product SiA511DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 12 VGS = 0 V, ID = - 250 µA P-Ch - 12 ID = 250 µA N-Ch 12 ID = - 250 µA P-Ch -7 ID = 250 µA N-Ch - 2.8 V mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.4 1 VDS = VGS, ID = - 250 µA P-Ch - 0.4 -1 VDS = 0 V, VGS = ± 8 V 2.1 N-Ch ± 100 P-Ch ± 100 VDS = 12 V, VGS = 0 V N-Ch 1 VDS = - 12 V, VGS = 0 V P-Ch -1 VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 12 V, VGS = 0 V, TJ = 55 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 15 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -8 V nA µA - 10 A VGS = 4.5 V, ID = 4.2 A N-Ch 0.033 0.040 VGS = - 4.5 V, ID = - 3.3 A P-Ch 0.058 0.070 VGS = 2.5 V, ID = 3.8 A N-Ch 0.039 0.048 VGS = - 2.5 V, ID = - 2.8 A P-Ch 0.082 0.100 VGS = 1.8 V, ID = 1.6 A N-Ch 0.051 0.063 VGS = - 1.8 V, ID = - 0.7 A P-Ch 0.111 0.140 VDS = 10 V, ID = 4.2 A N-Ch 13 VDS = - 10 V, ID = - 3.3 A P-Ch 9 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz N-Ch 400 P-Ch 400 N-Ch 120 P-Ch 140 pF N-Ch 70 P-Ch 100 VDS = 6 V, VGS = 8 V, ID = 5.5 A N-Ch 7.5 VDS = - 6 V, VGS = - 8 V, ID = - 4.3 A P-Ch 8 12 N-Ch 4.5 6.8 7.5 N-Channel VDS = 6 V, VGS = 4.5 V, ID = 5.5 A P-Ch 5 N-Ch 0.6 P-Ch 0.8 N-Ch 0.8 P-Ch 1.4 N-Ch 2.5 P-Ch 7 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A Gate Resistance Rg f = 1 MHz 12 nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 74592 S-80436-Rev. B, 03-Mar-08 New Product SiA511DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. N-Ch 5 10 P-Ch 15 25 N-Ch 15 25 P-Ch 25 40 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω tf P-Channel VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 35 55 P-Ch 20 30 N-Ch 15 25 P-Ch 10 15 N-Ch 5 10 10 P-Ch 5 N-Ch 10 15 P-Ch 12 20 N-Ch 15 25 P-Ch 20 30 N-Ch 10 15 P-Ch 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD - 4.5 N-Ch 20 P-Ch 0.8 1.2 IS = - 3.4 A, VGS = 0 V P-Ch - 0.8 - 1.2 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta P-Channel IF = - 3.4 A, di/dt = - 100 A/µs, TJ = 25 °C A - 10 N-Ch trr tb 4.5 P-Ch IS = 4.4 A, VGS = 0 V N-Channel IF = 4.4 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time N-Ch N-Ch 15 30 P-Ch 30 60 N-Ch 8 20 P-Ch 12 24 N-Ch 8.5 P-Ch 14 N-Ch 8.5 P-Ch 16 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 5 thru 2.5 V 8 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 0.0 2.0 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 600 VGS = 1.8 V 0.09 500 C - Capacitance (pF) 0.08 0.07 0.06 0.05 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 400 300 200 Coss 100 Crss 0.03 0 0 4 8 12 16 20 0 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 5.5 A 1.5 1.4 6 VDS = 6 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.0 VDS - Drain-to-Source Voltage (V) 0.10 R DS(on) - On-Resistance (Ω) 0.5 VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A 1.3 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74592 S-80436-Rev. B, 03-Mar-08 New Product SiA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.10 0.08 0.06 ID = 4.2 A, 125 °C 0.04 ID = 4.2 A, 25 °C 0.1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 20 0.8 0.7 ID = 250 µA 15 Power (W) VGS(th) (V) 0.6 0.5 0.4 10 0.3 5 0.2 0.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 14 Power Dissipation (W) ID - Drain Current (A) 12 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74592 S-80436-Rev. B, 03-Mar-08 New Product SiA511DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 7 New Product SiA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 VGS = 5 thru 2.5 V VGS = 2 V 1.6 I D - Drain Current (A) ID - Drain Current (A) 8 6 4 VGS = 1.5 V 2 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C TC = - 55 °C 0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 700 600 0.25 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.20 0.15 VGS = 2.5 V 0.10 0.05 500 Ciss 400 300 Coss 200 Crss 100 VGS = 4.5 V 0.00 0 0 2 4 6 8 10 0 2 ID - Drain Current (A) 4 On-Resistance vs. Drain Current and Gate Voltage 8 10 12 Capacitance 8 1.6 ID = 3.3 A ID = 4.3 A VDS = 6 V 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74592 S-80436-Rev. B, 03-Mar-08 New Product SiA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.20 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.3 A TJ = 25 °C 1 0.15 0.10 125 °C 0.05 25 °C 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.8 0.7 0.6 Power (W) V GS(th) (V) 15 ID = 250 µA 0.5 10 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 10 I D - Drain Current (A) Limited by R DS(on)* 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 9 New Product SiA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 10 Power Dissipation (W) I D - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74592 S-80436-Rev. B, 03-Mar-08 New Product SiA511DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74592. Document Number: 74592 S-80436-Rev. B, 03-Mar-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1