SiA511DJ Datasheet

New Product
SiA511DJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
12
- 12
RDS(on) (Ω)
ID (A)
• Halogen-free
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
a
0.040 at VGS = 4.5 V
4.5
0.048 at VGS = 2.5 V
4.5a
0.063 at VGS = 1.8 V
4.5a
0.070 at VGS = - 4.5 V
- 4.5a
0.100 at VGS = - 2.5 V
- 4.5a
0.140 at VGS = - 1.8 V
a
- 4.5
4.5 nC
5 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch for Portable Devices
PowerPAK SC-70-6 Dual
1
S1
S2
D1
2
G1
3
D2
D1
D1
6
Marking Code
G2
D2
EAX
Part # code
G2
5
2.05 mm
4
2.05 mm
S2
G1
XXX
Lot Traceability
and Date code
Ordering Information: SiA511DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Source Drain Current Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
±8
ID
IS
PD
4.5a, b, c
4.5a, b, c
20
4.5a
- 4.5a
- 4.5a
- 4.3b, c
- 3.4b, c
- 10
- 4.5a
1.6b, c
6.5
5
- 1.6b, c
6.5
5
1.9b, c
1.2b, c
1.9b, c
1.2b, c
4.5a
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
P-Channel
- 12
4.5a
IDM
Pulsed Drain Current
N-Channel
12
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
b, f
t≤5s
Symbol
RthJA
RthJC
P-Channel
Typ.
Max.
Typ.
Max.
52
12.5
65
16
52
12.5
65
16
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
New Product
SiA511DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
12
VGS = 0 V, ID = - 250 µA
P-Ch
- 12
ID = 250 µA
N-Ch
12
ID = - 250 µA
P-Ch
-7
ID = 250 µA
N-Ch
- 2.8
V
mV/°C
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.4
1
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
2.1
N-Ch
± 100
P-Ch
± 100
VDS = 12 V, VGS = 0 V
N-Ch
1
VDS = - 12 V, VGS = 0 V
P-Ch
-1
VDS = 12 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
P-Ch
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
15
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
-8
V
nA
µA
- 10
A
VGS = 4.5 V, ID = 4.2 A
N-Ch
0.033
0.040
VGS = - 4.5 V, ID = - 3.3 A
P-Ch
0.058
0.070
VGS = 2.5 V, ID = 3.8 A
N-Ch
0.039
0.048
VGS = - 2.5 V, ID = - 2.8 A
P-Ch
0.082
0.100
VGS = 1.8 V, ID = 1.6 A
N-Ch
0.051
0.063
VGS = - 1.8 V, ID = - 0.7 A
P-Ch
0.111
0.140
VDS = 10 V, ID = 4.2 A
N-Ch
13
VDS = - 10 V, ID = - 3.3 A
P-Ch
9
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Crss
Qg
N-Channel
VDS = 6 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 6 V, VGS = 0 V, f = 1 MHz
N-Ch
400
P-Ch
400
N-Ch
120
P-Ch
140
pF
N-Ch
70
P-Ch
100
VDS = 6 V, VGS = 8 V, ID = 5.5 A
N-Ch
7.5
VDS = - 6 V, VGS = - 8 V, ID = - 4.3 A
P-Ch
8
12
N-Ch
4.5
6.8
7.5
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 5.5 A
P-Ch
5
N-Ch
0.6
P-Ch
0.8
N-Ch
0.8
P-Ch
1.4
N-Ch
2.5
P-Ch
7
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A
Gate Resistance
Rg
f = 1 MHz
12
nC
Ω
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 74592
S-80436-Rev. B, 03-Mar-08
New Product
SiA511DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
N-Ch
5
10
P-Ch
15
25
N-Ch
15
25
P-Ch
25
40
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
N-Channel
VDD = 6 V, RL = 1.4 Ω
ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 6 V, RL = 1.8 Ω
ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Channel
VDD = 6 V, RL = 1.4 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
tf
P-Channel
VDD = - 6 V, RL = 1.8 Ω
ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
N-Ch
35
55
P-Ch
20
30
N-Ch
15
25
P-Ch
10
15
N-Ch
5
10
10
P-Ch
5
N-Ch
10
15
P-Ch
12
20
N-Ch
15
25
P-Ch
20
30
N-Ch
10
15
P-Ch
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
- 4.5
N-Ch
20
P-Ch
0.8
1.2
IS = - 3.4 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
P-Channel
IF = - 3.4 A, di/dt = - 100 A/µs, TJ = 25 °C
A
- 10
N-Ch
trr
tb
4.5
P-Ch
IS = 4.4 A, VGS = 0 V
N-Channel
IF = 4.4 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
N-Ch
N-Ch
15
30
P-Ch
30
60
N-Ch
8
20
P-Ch
12
24
N-Ch
8.5
P-Ch
14
N-Ch
8.5
P-Ch
16
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
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New Product
SiA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
VGS = 5 thru 2.5 V
8
VGS = 2 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
VGS = 1.5 V
4
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.4
0.8
1.2
1.6
TC = - 55 °C
0
0.0
2.0
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
600
VGS = 1.8 V
0.09
500
C - Capacitance (pF)
0.08
0.07
0.06
0.05
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
400
300
200
Coss
100
Crss
0.03
0
0
4
8
12
16
20
0
3
ID - Drain Current (A)
6
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
8
ID = 5.5 A
1.5
1.4
6
VDS = 6 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.0
VDS - Drain-to-Source Voltage (V)
0.10
R DS(on) - On-Resistance (Ω)
0.5
VDS = 9.6 V
4
2
VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A
1.3
1.2
1.1
1.0
0.9
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
New Product
SiA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
0.10
0.08
0.06
ID = 4.2 A, 125 °C
0.04
ID = 4.2 A, 25 °C
0.1
0.0
0.02
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
20
0.8
0.7
ID = 250 µA
15
Power (W)
VGS(th) (V)
0.6
0.5
0.4
10
0.3
5
0.2
0.1
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Pulse (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
5
New Product
SiA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
14
Power Dissipation (W)
ID - Drain Current (A)
12
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 74592
S-80436-Rev. B, 03-Mar-08
New Product
SiA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
7
New Product
SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
VGS = 5 thru 2.5 V
VGS = 2 V
1.6
I D - Drain Current (A)
ID - Drain Current (A)
8
6
4
VGS = 1.5 V
2
1.2
0.8
TC = 25 °C
0.4
TC = 125 °C
TC = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
0.0
0.0
2.0
0.3
VDS - Drain-to-Source Voltage (V)
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
700
600
0.25
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.6
0.20
0.15
VGS = 2.5 V
0.10
0.05
500
Ciss
400
300
Coss
200
Crss
100
VGS = 4.5 V
0.00
0
0
2
4
6
8
10
0
2
ID - Drain Current (A)
4
On-Resistance vs. Drain Current and Gate Voltage
8
10
12
Capacitance
8
1.6
ID = 3.3 A
ID = 4.3 A
VDS = 6 V
1.4
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
VDS - Drain-to-Source Voltage (V)
VDS = 9.6 V
4
2
VGS = 4.5 V, 2.5 V, 1.8 V
1.2
1.0
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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8
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
New Product
SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.20
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3.3 A
TJ = 25 °C
1
0.15
0.10
125 °C
0.05
25 °C
0.00
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.8
0.7
0.6
Power (W)
V GS(th) (V)
15
ID = 250 µA
0.5
10
5
0.4
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
10
I D - Drain Current (A)
Limited by
R DS(on)*
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
BVDSS Limited
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
9
New Product
SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
10
Power Dissipation (W)
I D - Drain Current (A)
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
New Product
SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74592.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
11
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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Document Number: 91000
Revision: 18-Jul-08
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