SiA517DJ Datasheet

SiA517DJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
12
- 12
RDS(on) ()
0.029 at VGS = 4.5 V
ID (A)
0.034 at VGS = 2.5 V
4.5a
0.044 at VGS = 1.8 V
4.5a
• TrenchFET® Power MOSFETs
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Qg (Typ.)
4.5a
0.065 at VGS = 1.5 V
4.5a
0.061 at VGS = - 4.5 V
- 4.5a
0.081 at VGS = - 2.5 V
- 4.5a
0.115 at VGS = - 1.8 V
- 4.5a
0.170 at VGS = - 1.5 V
- 4.5a
5.6 nC
APPLICATIONS
8.2 nC
• Load Switch for Portable Devices
PowerPAK SC-70-6 Dual
1
S1
S2
D1
2
G1
3
D2
D1
D1
6
Marking Code
G2
D2
EEX
Part # code
G2
5
2.05 mm
4
S2
2.05 mm
G1
XXX
Lot Traceability
and Date Code
Ordering Information: SiA517DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
N-Channel
12
P-Channel
- 12
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
6.5
5
1.9b, c
1.2b, c
- 4.5a
- 4.5a
- 4.3b, c
- 3.8b, c
- 15
- 4.5a
- 1.6b, c
6.5
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Typ.
Max.
Typ.
Max.
Parameter
Symbol
Unit
Maximum Junction-to-Ambientb, f
t5s
RthJA
52
65
52
65
°C/W
12.5
16
12.5
16
Maximum Junction-to-Case (Drain)
Steady State
RthJC
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
For technical questions, contact:: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
12
VGS = 0 V, ID = - 250 µA
P-Ch
- 12
V
ID = 250 µA
N-Ch
12
ID = - 250 µA
P-Ch
- 3.1
ID = 250 µA
N-Ch
- 2.5
mV/°C
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.4
1
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
2.4
N-Ch
± 100
P-Ch
± 100
VDS = 12 V, VGS = 0 V
N-Ch
1
VDS = - 12 V, VGS = 0 V
P-Ch
-1
VDS = 12 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS 5 V, VGS = 4.5 V
N-Ch
15
VDS - 5 V, VGS = - 4.5 V
P-Ch
- 10
VGS = 4.5 V, ID = 5 A
V
nA
µA
A
N-Ch
0.024
0.029
VGS = - 4.5 V, ID = - 3.6 A
P-Ch
0.050
0.061
VGS = 2.5 V, ID = 4.6 A
N-Ch
0.028
0.034
VGS = - 2.5 V, ID = - 3.2 A
P-Ch
0.066
0.081
VGS = 1.8 V, ID = 4.1 A
N-Ch
0.032
0.044
VGS = - 1.8 V, ID = - 1 A
P-Ch
0.093
0.115
VGS = 1.5 V, ID = 2 A
N-Ch
0.042
0.065
VGS = - 1.5 V, ID = - 1 A
P-Ch
0.112
0.170
VDS = 10 V, ID = 5 A
N-Ch
21
VDS = - 10 V, ID = - 3.6 A
P-Ch
11

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
N-Channel
VDS = 6 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 6 V, VGS = 0 V, f = 1 MHz
VDS = 6 V, VGS = 8 V, ID = 6.5 A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
VDS = - 6 V, VGS = - 8 V, ID = - 4.5 A
Rg
500
P-Ch
590
N-Ch
160
P-Ch
280
100
P-Ch
250
N-Ch
9.7
P-Ch
13.1
20
N-Ch
5.6
8.5
12.5
P-Ch
8.2
N-Ch
0.72
P-Channel
VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A
P-Ch
1.2
N-Ch
0.74
P-Ch
f = 1 MHz
pF
N-Ch
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 6.5 A
Qgs
Qgd
N-Ch
15
nC
2.8
N-Ch
0.7
3.5
7
P-Ch
2
10
20

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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For technical questions, contact:: [email protected]
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
P-Channel
VDD = - 6 V, RL = 1.6 
ID  - 3.8 A, VGEN = - 4.5 V, Rg = 1 
N-Channel
VDD = 6 V, RL = 1.2 
ID  5.2 A, VGEN = 10 V, Rg = 1 
tf
P-Channel
VDD = - 6 V, RL = 1.6 
ID  - 3.8 A, VGEN = - 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
N-Channel
VDD = 6 V, RL = 1.2 
ID  5.2 A, VGEN = 4.5 V, Rg = 1 
N-Ch
10
15
P-Ch
30
40
N-Ch
10
15
P-Ch
25
40
N-Ch
22
30
P-Ch
30
45
N-Ch
10
15
P-Ch
20
30
N-Ch
5
10
15
P-Ch
8
N-Ch
10
15
P-Ch
12
20
N-Ch
18
30
P-Ch
25
40
N-Ch
10
15
P-Ch
18
30
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
ISM
VSD
Body Diode Voltage
4.5
P-Ch
- 4.5
N-Ch
20
P-Ch
- 10
IS = 5.2 A, VGS = 0 V
N-Ch
0.85
1.2
IS = - 3.4 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
trr
Body Diode Reverse Recovery Time
N-Ch
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 5.2 A, dI//dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
P-Channel
IF = - 3.8 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
N-Ch
20
40
P-Ch
30
60
N-Ch
5
10
P-Ch
12
24
N-Ch
8
P-Ch
16
N-Ch
12
P-Ch
14
A
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
For technical questions, contact:: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
20
VGS = 5 V thru 2 V
4
I D - Drain Current (A)
I D - Drain Current (A)
15
VGS = 1.5 V
10
3
2
TC = 25 °C
5
1
TC = 125 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.3
Output Characteristics
1.2
1.5
Transfer Characteristics
0.10
800
0.08
VGS = 1.5 V
VGS = 1.8 V
0.06
0.04
VGS = 2.5 V
600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.9
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ciss
400
Coss
200
0.02
VGS = 4.5 V
Crss
0.00
0
0
5
10
15
20
0
3
6
9
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
12
1.6
1.5
ID = 6.5 A
1.4
VDS = 3 V
4
VDS = 9.6 V
VDS = 6 V
2
1.3
(Normalized)
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
0.6
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5 A
1.2
1.1
VGS = 1.5 V; ID = 2 A
1.0
0.9
0.8
0
0
4
8
Qg - Total Gate Charge (nC)
Gate Charge
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4
12
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact:: [email protected]
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
100
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.07
TJ = 150 °C
10
TJ = 25 °C
1
0.06
ID = 2 A; TJ = 125 °C
ID = 5 A; TJ = 125 °C
0.05
0.04
ID = 5 A;
TJ = 25 °C
0.03
ID = 2 A; TJ = 25 °C
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0.00
0.0
1.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.8
20
0.7
15
Power (W)
VGS(th) (V)
0.6
ID = 250 µA
0.5
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
TA = 25 °C
Single Pulse
100 ms, 1 s
10 s, DC
0.1
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
For technical questions, contact:: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
8
Power Dissipation (W)
I D - Drain Current (A)
12
9
6
Package Limited
6
4
2
3
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
For technical questions, contact:: [email protected]
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
For technical questions, contact:: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
5
VGS = 5 V thru 2.5 V
4
VGS = 2 V
I D - Drain Current (A)
I D - Drain Current (A)
12
9
6
VGS = 1.5 V
3
3
2
TC = 25 °C
TC = 125 °C
1
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
2.0
Transfer Characteristics
0.30
1200
0.25
1000
VGS = 1.5 V
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
0.20
0.15
0.10
VGS = 2.5 V
800
Ciss
600
400
Coss
Crss
0.05
200
VGS = 4.5 V
0.00
0
0
3
6
9
12
15
0
3
9
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
8
ID = 4.5 A
1.3
VGS = 4.5 V, 2.5 V; ID = 3.6 A
VDS = 6 V
VDS = 9.6 V
4
2
1.2
(Normalized)
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
VGS = 1.8 V; ID = 1 A
1.1
VGS = 1.5 V; ID = 1 A
1.0
0.9
0.8
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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8
12
15
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact:: [email protected]
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1 A
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.12
0.09
TJ = 125 °C
0.06
TJ = 25 °C
0.03
0.00
0.3
0.6
0.9
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.15
0.7
0.09
VGS(th) (V)
R DS(on) - On-Resistance (Ω)
ID = 3.6 A
0.12
TJ = 125 °C
0.06
0.6
ID = 250 µA
0.5
TJ = 25 °C
0.4
0.03
0.3
- 50
0.00
0
1
2
3
4
5
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
20
100
Limited by RDS(on)*
I D - Drain Current (A)
Power (W)
15
10
5
10
100 µs
1 ms
1
10 ms
100 ms
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.1
BVDSS Limited
0
0.001
0.01
0.1
10
1
100
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
1000
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
For technical questions, contact:: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
8
Power Dissipation (W)
I D - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
For technical questions, contact:: [email protected]
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA517DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?64832.
Document Number: 64832
S13-0463-Rev. B, 04-Mar-13
For technical questions, contact:: [email protected]
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
www.vishay.com
1
Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000