Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A) a 0.052 at VGS = -4.5 V -8 e 0.082 at VGS = -2.5 V -7.5 VDS (V) -20 • TrenchFET® power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see PowerPAK® ChipFET® Single D D D 7 8 S 6 5 9 1. m m 1 m 0m 3. S 9 Top View APPLICATIONS S • Load switch • HDD DC/DC 1 2 3 D D 4 D G Bottom View G Ordering Information: Si5459DU-T1-GE3 (Lead (Pb)-free and halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C -8 e ID -6.7 b, c -5.3 b, c TA = 70 °C Pulsed Drain Current (10 μs pulse width) Source-Drain Current Diode Current IDM TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C -8 e IS -2.9 b, c 10.9 7 PD W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A -20 TC = 25 °C Maximum Power Dissipation V -8 e TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -50 to 150 Soldering Recommendations (Peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT TYPICAL MAXIMUM Maximum Junction-to-Ambient b, d t 10 s RthJA 30 36 Maximum Junction-to-Case (Drain) Steady State RthJC 9.5 11.5 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 72 °C/W. e. Package limited. f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. S16-0980-Rev. C, 23-May-16 Document Number: 65017 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5459DU www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER TYP. a MAX. UNIT -20 - - V - -19 - - 3.1 - SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = -250 μA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient VDS/TJ ID = -250 μA VGS(th)/TJ Gate Threshold Voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.6 - -1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V - - -100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current b ID(on) Drain-Source On-State Resistance b Forward Transconductance b RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS = -5 V, VGS = -10 V -20 - - A VGS = -4.5 V, ID = -6.7 A - 0.043 0.052 VGS = -2.5 V, ID = -1 A - 0.068 0.082 VDS = -10 V, ID = -6.7 A - 11 - - 665 - - 140 - - 115 - - 17 26 μA S Dynamic a Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -10 V, ID = -6.7 A pF - 8 12 VDS = -10 V, VGS = -4.5 V, ID = -6.7 A - 2 - - 3 - f = 1 MHz 1.2 6 12 - 6 12 - 15 23 - 26 39 tf - 9 18 td(on) - 21 32 - 50 75 - 29 44 - 13 20 - - -8 - - -20 - -0.77 -1.2 V - 30 45 ns - 17 26 nC - 16 - - 14 - td(on) VDD = -10 V, RL = 1.9 ID -5.3 A, VGEN = -10 V, Rg = 1 tr td(off) VDD = -10 V, RL = 1.9 ID -5.3 A, VGEN = -4.5 V, Rg = 1 tr td(off) tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = -5.3 A IF = -5.3 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 μs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0980-Rev. C, 23-May-16 Document Number: 65017 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5459DU www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 3.0 VGS = 5 V thru 3 V 2.5 I D - Drain Current (A) ID - Drain Current (A) 15 10 VGS = 2.5 V 2.0 1.5 TC = 25 °C 1.0 5 0.5 TC = 125 °C VGS = 2 V 0.5 1.0 1.5 2.0 TC = - 55 °C 0.0 0.0 2.5 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.16 1200 0.12 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.0 VGS = 2.5 V 0.08 Ciss 600 300 0.04 2.5 Coss VGS = 4.5 V Crss 0 0 0 5 10 15 20 0 4 ID - Drain Current (A) 8 16 20 Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.6 R DS(on) - On-Resistance (Normalized) ID = 6.7 A VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 2 0 0 3 6 9 12 15 18 1.5 1.4 VGS = 4.5 V; I D = - 6.7 A 1.3 1.2 1.1 VGS = 2.5 V; I D = - 5.3 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S16-0980-Rev. C, 23-May-16 150 Document Number: 65017 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5459DU www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.15 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = - 6.7 A 10 TJ = 25 °C TJ = 150 °C 1 0.12 0.09 TJ = 125 °C 0.06 0.03 TJ = 25 °C 0.00 2.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 30 1.2 25 1.1 5.0 20 Power (W) VGS(th) (V) 2.5 VSD - Source-to-Drain Voltage (V) 1.0 ID = 250 µA 0.9 15 10 0.8 5 0.7 0.6 - 50 0 - 25 0 25 50 75 100 125 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-0980-Rev. C, 23-May-16 Document Number: 65017 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5459DU www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 ID - Drain Current (A) 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 15 2.5 12 2.0 Power (W) Power (W) Current Derating a 9 6 3 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-0980-Rev. C, 23-May-16 Document Number: 65017 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5459DU www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 72 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65017. S16-0980-Rev. C, 23-May-16 Document Number: 65017 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® ChipFET® Case Outline D (7) (6) (5) (1) (2) (3) (4) E (8) Pin #1 indicator Side view of single e b H D1 D(2) D2 K D(3) L G(4) K1 D2 SI(1) GI(2) S2(3) D1(8) D1(7) D2(6) Detail Z G2(4) K2 L D(1) A1 C A Z Side view of dual E1 E2 E3 H D3 D(8) D(7) D(6) S(5) K3 Backside view of dual pad Backside view of single pad DIM. D2(5) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.85 0.028 0.030 0.033 A1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 C 0.15 0.20 0.25 0.006 0.008 0.010 D 2.92 3.00 3.08 0.115 0.118 0.121 D1 1.75 1.87 2.00 0.069 0.074 0.079 D2 1.07 1.20 1.32 0.042 0.047 0.052 D3 0.20 0.25 0.30 0.008 0.010 0.012 E 1.82 1.90 1.98 0.072 0.075 0.078 E1 1.38 1.50 1.63 0.054 0.059 0.064 E2 0.92 1.05 1.17 0.036 0.041 0.046 E3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 BSC 0.026 BSC H 0.15 0.20 0.25 0.006 0.008 0.010 K 0.25 - - 0.010 - - K1 0.30 - - 0.012 - - K2 0.20 - - 0.008 - - K3 0.20 - - 0.008 - - L 0.30 0.35 0.40 0.012 0.014 0.016 C14-0630-Rev. E, 21-Jul-14 DWG: 5940 Note • Millimeters will govern Document Number: 73203 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 21-Jul-14 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single 0.225 (0.009) 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 1.870 (0.074) 0.305 (0.012) 2.575 (0.101) Recommended Minimum Pads Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 69948 Revision: 21-Jan-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000