PMEG2002AESF 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 22 January 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits • • • • • • Average forward current IF(AV) ≤ 0.2 A Reverse voltage VR ≤ 20 V Low forward voltage typ. VF = 245 mV Low reverse current typ. IR = 5 µA Ultra small and leadless SMD package Package height typ. 0.3 mm 3. Applications • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb = 115 °C; [1] Min Typ Max Unit - - 0.2 A - - 0.2 A square wave δ = 0.5 ; f = 20 kHz; Tsp = 125 °C; square wave VR reverse voltage Tj = 25 °C - - 20 V VF forward voltage IF = 10 mA; pulsed; tp ≤ 300 µs; - 245 310 mV - 5 - µA δ ≤ 0.02 ; Tj = 25 °C IR reverse current [1] VR = 10 V; Tj = 25 °C Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN0603-2 (SOD962-2) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package PMEG2002AESF Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PMEG2002AESF A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF forward current Tsp ≤ 120 °C - 0.28 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb = 115 °C; - 0.2 A - 0.2 A [1] square wave δ = 0.5 ; f = 20 kHz; Tsp = 125 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 2 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 4.5 A Ptot total power dissipation Tamb ≤ 25 °C - 325 mW PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 [2] © NXP N.V. 2014. All rights reserved 2 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier Symbol Parameter Conditions Min Max Unit [3] - 525 mW [1] - 950 mW Tj junction temperature - 125 °C Tamb ambient temperature -55 125 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] Min Typ Max Unit [1][2] - - 310 K/W [1][3] - - 190 K/W [1][4] - - 105 K/W [5] - - 40 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 2 aaa-006823 103 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 0.02 0 10 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 3 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-006824 103 Zth(j-a) (K/W) duty cycle = 102 0.75 0.33 0.2 1 0.5 0.25 0.1 0.02 0.01 0 0.05 10 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-006825 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 4 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 mA; pulsed; tp ≤ 300 µs; - 120 180 mV - 180 250 mV - 245 310 mV - 330 380 mV - 375 420 mV VR = 6 V; Tj = 25 °C - 3.2 20 µA VR = 10 V; Tj = 25 °C - 5 - µA VR = 20 V; Tj = 25 °C - 10 45 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 25 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 10 - pF IF = 200 mA; IR = 200 mA; - 1.9 - ns δ ≤ 0.02 ; Tj = 25 °C IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR reverse current Cd diode capacitance trr reverse recovery time IR(meas) = 40 mA; Tj = 25 °C aaa-006875 10 IF (A) 1 aaa-006876 10-2 IR (A) 10-3 (1) (1) (2) 10-4 (2) 10-1 10-5 (3) 10-6 10-2 10-7 10-3 (3) 10-4 Fig. 4. 0 10-8 (4) 0.2 (4) 0.4 0.6 0.8 VF (V) 1.0 10-9 0 5 (1) Tj = 125 °C (1) Tj = 125 °C (2) Tj = 85 °C (2) Tj = 85 °C (3) Tj = 25 °C (3) Tj = 25 °C (4) Tj = −40 °C (4) Tj = −40 °C Forward current as a function of forward voltage; typical values PMEG2002AESF Product data sheet Fig. 5. 15 VR (V) 20 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 22 January 2014 10 © NXP N.V. 2014. All rights reserved 5 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-006877 50 aaa-008580 100 Cd (pF) (4) PF(AV) (mW) 40 80 30 60 20 40 10 20 (3) (2) 0 Fig. 6. 0 4 8 12 16 VR (V) 0 20 (1) 0 f = 1 MHz; Tamb = 25 °C Tj = 125 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. aaa-008581 100 0.2 (1) 0.2 (2) 0.3 aaa-008582 IF(AV) (A) (1) IF(AV) (A) Average forward power dissipation as a function of average forward current; typical values 0.3 PR(AV) (mW) 80 0.1 (2) 60 (3) 40 0 (4) (4) 0 5 10 15 VR (V) 0 20 Tj = 125 °C Average reverse power dissipation as a function of reverse voltage; typical values PMEG2002AESF Product data sheet 0 50 100 Tamb (°C) 150 FR4 PCB, standard footprint Tj = 125 °C (1) δ = 1 (DC) (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Fig. 8. (3) 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 9. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 6 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-008583 0.3 (1) IF(AV) (A) 0.2 (1) IF(AV) (A) 0.2 (2) (3) 0.1 aaa-008584 0.3 (2) (3) 0.1 (4) 0 0 50 (4) 100 Tamb (°C) 0 150 FR4 PCB, mounting pad for anode and cathode 1 0 50 100 Tamb (°C) 150 Ceramic PCB, Al2O3, standard footprint 2 Tj = 125 °C cm each Tj = 125 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 11. Average forward current as a function of ambient temperature; typical values Fig. 10. Average forward current as a function of ambient temperature; typical values aaa-008585 0.3 (1) IF(AV) (A) 0.2 (2) (3) 0.1 (4) 0 0 50 100 Tsp (°C) 150 Tj = 125 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 12. Average forward current as a function of solder point temperature; typical values PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 7 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 14. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 8 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 12. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 L 1 2 b e1 A A1 E D (1) 0 0.5 mm scale Dimensions (mm are the original dimensions) Unit A max 0.32 nom min 0.28 mm A1 0.03 b D E e1 0.25 0.325 0.625 0.23 0.275 0.575 0.4 L 0.15 0.13 Note 1. The marking bar indicates the cathode. Outline version sod962-2_po References IEC JEDEC JEITA European projection Issue date 13-07-12 13-07-17 SOD962-2 Fig. 15. Package outline DSN0603-2 (SOD962-2) PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 9 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 13. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.22 (2×) 0.12 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2) PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 10 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG2002AESF v.3 20140122 Product data sheet - PMEG2002AESF v.2 Modifications: • PMEG2002AESF v.2 20131008 Product data sheet - PMEG2002AESF v.1 PMEG2002AESF v.1 20130301 Objective data sheet - - PMEG2002AESF Product data sheet Features and benefits: corrected All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 11 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 13 / 14 PMEG2002AESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 Test information ..................................................... 8 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 January 2014 PMEG2002AESF Product data sheet All information provided in this document is subject to legal disclaimers. 22 January 2014 © NXP N.V. 2014. All rights reserved 14 / 14