Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features High collector to emitter voltage VCEO. 15.6±0.5 ● Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics marking 1 2 3 2.0±0.2 Parameter 0.7±0.1 (Ta=25˚C) +0.2 0.45–0.1 ■ Absolute Maximum Ratings 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –100V, IE = 0 Collector to emitter voltage VCEO IC = –100µA, IB = 0 –150 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V VCE = –5V, IC = –10mA 90 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Noise voltage NV *1h FE VCE = –10V, IC = – 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 450 –1 200 MHz 5 150 V pF mV Rank classification Rank Q R S T hFE 90 ~ 155 130 ~ 220 185 ~ 330 260 ~ 450 1