Transistors 2SA2009 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High collector to emitter voltage VCEO • Low noise voltage NV 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Symbol Rating Unit VCBO −120 V Collector to emitter voltage VCEO −120 V Emitter to base voltage VEBO −5 V Peak collector current ICP −50 mA Collector current IC −20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector to base voltage 10˚ 0 to 0.1 Parameter 1.3±0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marking Symbol: AR ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit −100 nA −1 µA Collector cutoff current ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −120 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −120 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 V hFE VCE = −5 V, IC = −2 mA 180 VCE(sat) IC = −20 mA, IB = −2 mA Forward current transfer ratio * Collector to emitter saturation voltage Noise voltage Transition frequency 700 − 0.6 V NV VCE = −40 V, IC = −1 mA, GV = 80 dB Rg = 100 kW, Function = FLAT 130 mV fT VCB = −5 V, IE = 2 mA, f = 200 MHz 120 MHz Note) *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 1