Si1031R/X Datasheet

Si1031R/X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (mA)
8 at VGS = - 4.5 V
- 150
12 at VGS = - 2.5 V
- 125
15 at VGS = - 1.8 V
- 100
20 at VGS = - 1.5 V
- 30
• Halogen-free According to IEC 61249-2-21
Definition
• High-Side Switching
• Low On-Resistance: 8 
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 45 ns
• TrenchFET® Power MOSFETs: 1.5 V Rated
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G
1
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X
3
S
BENEFITS
D
•
•
•
•
•
Marking Code: H
2
Top View
Ordering Information:
Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1031R
Parameter
Symbol
5s
Si1031X
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±6
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Pulsed Drain Currenta
- 150
- 110
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
PD
5s
Steady State
Unit
V
- 140
- 165
- 100
- 150
- 500
- 155
- 125
- 600
- 250
- 200
- 340
- 240
280
250
340
300
145
130
170
150
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
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1
Si1031R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Typ.a
Max.
Unit
- 1.2
V
VDS = 0 V, VGS = ± 2.8 V
± 0.5
± 1.0
VDS = 0 V, VGS = ± 4.5 V
± 1.0
± 2.0
VDS = - 16 V, VGS = 0 V
-1
- 500
nA
- 10
µA
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.40
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
RDS(on)
- 200
mA
VGS = - 4.5 V, ID = - 150 mA
8
VGS = - 2.5 V, ID = - 125 mA
12
VGS = - 1.8 V, ID = - 100 mA
15
VGS = - 1.5 V, ID = - 30 mA
Forward Transconductancea
Diode Forward
Voltagea
gfs
VDS = - 10 V, ID = 150 mA
VSD
IS = - 150 mA, VGS = 0 V
µA

20
0.4
S
- 1.2
V
Dynamicb
Qg
Total Gate Charge
1500
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
tr
Rise Time
td(off)
Turn-Off Delay Time
VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA
pC
150
450
55
VDD = - 10 V, RL = 65 
ID  - 150 mA, VGEN = - 4.5 V, Rg = 10 
30
tf
Fall Time
ns
60
30
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5
500
2V
VGS = 5 V thru 2.5 V
TJ = - 55 °C
25 °C
400
I D - Drain Current (mA)
ID - Drain Current (A)
0.4
1.8 V
0.3
0.2
0.1
125 °C
300
200
100
0.0
0
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2
1
2
3
4
5
6
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
Si1031R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
120
VGS = 0 V
f = 1 MHz
100
20
VGS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 1.8 V
15
10
Ciss
80
60
40
VGS = 4.5 V
Coss
5
20
Crss
0
0
0
200
400
600
800
1000
0
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (mA)
Capacitance
On-Resistance vs. Drain Current
5
1.6
VDS = 10 V
ID = 150 mA
4
1.4
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
3
2
1
0
0.0
VGS = 4.5 V
ID = 150 mA
1.2
VGS = 1.8 V
ID = 125 mA
1.0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
- 50
1.6
- 25
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
1000
50
RDS(on) - On-Resistance (Ω)
IS - Source Current (mA)
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
40
ID = 150 mA
30
20
10
ID = 125 mA
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Surge-Drain Diode Forward Voltage
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
1.4
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si1031R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.0
0.3
2.5
0.2
VGS(th) Variance (V)
ID = 0.25 mA
2.0
IGSS - (µA)
0.1
0.0
1.5
- 0.1
1.0
- 0.2
0.5
- 0.3
- 50
- 25
0
25
50
75
100
0.0
-50
125
VGS = 2.8 V
-25
25
50
75
100
125
TJ - Temperature (° C)
TJ - Temperature (° C)
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
0
IGSS vs. Temperature
0
-1
-2
-3
-4
-5
-6
-7
-50
-25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71171.
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Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
Package Information
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Vishay Siliconix
SC-75A: 3 Leads
L2
A
2
D
1
D bbb
D
e2
2X
D
3
L1
L
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
bbb
D
1
2
C
bbb C
D
4
ddd M
C
B
3
2X
e3
B1
b1
2XB1
A– B
B
B
2X
D
c1
C
With Tin Planting
bbb
D
Section B-B 5
A
A2
Base Metal
C
4X
Seating Plane
A1
D
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIMENSIONS
TOLERANCES
aaa
0.10
bbb
0.10
ccc
0.10
ddd

C15-1445-Rev. F, 23-Nov-15
0.10
DIM.
MILLIMETERS
MIN.
NOM.
MAX.
A
-
-
0.80
A1
0.00
-
0.10
NOTE
A2
0.65
0.70
0.80
B1
0.19
-
0.24
b1
0.17
-
0.21
c
0.13
-
0.15
c1
0.10
-
0.12
5
D
1.48
1.575
1.68
1, 2
E
1.50
1.60
1.70
E1
0.66
0.76
0.86
e1
0.50 BSC
e2
1.00 BSC
e3
L
5
5
1, 2
0.50 BSC
0.15
0.205
L1
0.40 ref.
L2
0.15 BSC
0.30
q
0°
-
8°
q1
4°
-
10°
Document Number: 71348
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
0.031
(0.798)
0.020
(0.503)
(1.803)
0.071
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Return to Index
APPLICATION NOTE
Document Number: 72603
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
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Document Number: 91000