VISHAY SI1026X

Si1026X
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS(min) (V)
RDS(on) ()
VGS(th) (V)
ID (mA)
60
1.40 at VGS = 10 V
1 to 2.5
500
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 1.40 
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
SC-89
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code: E
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
APPLICATIONS
Top View
Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
b
Continuous Source Current (Diode Conduction)a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
TA = 25 °C
TA = 85 °C
PD
V
320
305
230
220
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
mA
- 650
450
380
280
250
145
130
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
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Si1026X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 10 µA
60
VGS(th)
VDS = VGS, ID = 0.25 mA
1
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-Resistancea
ID(on)
RDS(on)
2.5
VDS = 0 V, VGS = ± 10 V
± 150
VDS = 0 V, VGS = ± 5 V
± 50
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 85 °C
500
VDS = 7.5 V, VGS = 10 V
800
3.0
VGS = 10 V, ID = 500 mA
1.40
Diode Forward Voltage
a
VDS = 10 V, ID = 200 mA
VSD
VGS = 0 V, IS = 200 mA
µA
mA
VGS = 4.5 V, ID = 200 mA
gfs
nA
10
VDS = 10 V, VGS = 4.5 V
VGS = 10 V, ID = 500 mA, TJ = 125 °C
Forward Transconductancea
V

2.50
200
mS
1.40
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
600
VDS = 10 V, ID = 250 mA, VGS = 4.5 V
120
pC
225
30
VDS = 25 V, VGS = 0 V,
f = 1 MHz
6
pF
3
Switchingb, c
Turn-On Time
t(on)
Turn-Off Time
t(off)
VDD = 30 V, RL = 150 
ID = 200 mA, VGEN = 10 V, Rg = 10 
15
20
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
Si1026X
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1200
1.0
6V
TJ = - 55 °C
VGS = 10 V thru 7 V
5V
I D - Drain Current (mA)
I D - Drain Current (A)
0.8
0.6
4V
0.4
900
25 °C
125 °C
600
300
0.2
3V
0.0
0
0
1
2
3
4
5
0
1
VDS - Drain-to-Source Voltage (V)
2
4
5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
50
VGS = 0 V
f = 1 MHz
3.5
40
3.0
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3
2.5
VGS = 4.5 V
2.0
1.5
VGS = 10 V
1.0
30
Ciss
20
Coss
10
0.5
Crss
0.0
0
0
200
400
600
800
1000
0
5
ID - Drain Current (mA)
10
25
Capacitance
7
2.0
VGS = 10 V at 500 mA
VDS = 10 V
ID = 250 mA
1.6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
15
5
4
3
2
VGS = 4.5 V
at 200 mA
1.2
0.8
0.4
1
0
0.0
0.1
0.2
0.3
0.4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
0.5
0.6
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1026X
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1000
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
VGS = 0 V
100
TJ = 125 °C
10
TJ = 25 °C
4
3
2
ID = 500 mA
ID = 200 mA
1
TJ = - 55 °C
0
1
0
0.3
0.6
0.9
1.2
0
1.5
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
VGS(th) Variance (V)
0.2
ID = 250 µA
-0
- 0.2
- 0.4
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71434.
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Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
Package Information
Vishay Siliconix
SC89: 6Ć LEADS (SOTĆ563F)
2
3
E1/2
D
4
ÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎ
A
6
2
aaa
e1
5
C
2X
4
E/2
E
E1
3
2X
aaa
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
B
D
4
C
ÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
1
5
e
2
B
4
L1
L
A
2X
3
bbb
C
6X b
ccc
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎÎÎÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎÎÎÎÎ
M
C
A–B D
A1
A1
SEE DETAIL “A”
MILLIMETERS
Dim
Min
Max
NOTES:
2.
2
3.
3
Dimensions in millimeters.
Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
Note
Symbol
Tolerances
Of Form And
Position
A
0.56
0.60
aaa
0.10
A1
0.00
0.10
bbb
0.10
b
0.15
0.30
ccc
0.10
c
0.10
0.18
D
1.50
1.70
E
1.55
1.70
Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
E1
1.20 BSC
e
0.50 BSC
44.
Datums A, B and D to be determined 0.10 mm from the lead tip.
e1
1.00 BSC
Terminal numbers are shown for reference only.
L
0.35 BSC
5.
5
L1
0.20 BSC
6.
6
These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Document Number: 71612
25-Jun-01
6
DETAIL “A”
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.
SECTION B-B
C
2, 3
2, 3
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
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Legal Disclaimer Notice
Vishay
Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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