BAP63-02 Silicon PIN diode Rev. 04 — 8 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Silicon PIN diode BAP63-02 FEATURES PINNING • High speed switching for RF signals PIN • Low diode capacitance • Low diode forward resistance • Very low series inductance • For applications up to 3 GHz. handbook, halfpage APPLICATIONS • RF attenuators and switches. DESCRIPTION 1 cathode 2 anode 1 2 Top view DESCRIPTION MAM405 Marking code: K5. Planar PIN diode in a SOD523 ultra small SMD plastic package. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg Tj CONDITIONS MIN. − MAX. 50 UNIT V − 100 mA − 715 mW storage temperature −65 +150 °C junction temperature −65 +150 °C Ts ≤ 90 °C Rev. 04 - 8 January 2008 2 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP63-02 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse leakage current VR = 35 V − 10 nA Cd diode capacitance VR = 0; f = 1 MHz 0.36 − pF VR = 1 V; f = 1 MHz 0.32 − pF VR = 20 V; f = 1 MHz 0.25 0.32 pF IF = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω rD |s21|2 |s21|2 |s21|2 |s21|2 |s21|2 diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss IF = 1 mA; f = 100 MHz; note 1 1.95 3 Ω IF = 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω VR = 0; f = 900 MHz 15.6 − dB VR = 0; f = 1800 MHz 10.3 − dB VR = 0; f = 2450 MHz 8.3 − dB IF = 0.5 mA; f = 900 MHz 0.19 − dB IF = 0.5 mA; f = 1800 MHz 0.24 − dB IF = 0.5 mA; f = 2450 MHz 0.28 − dB IF = 1 mA; f = 900 MHz 0.16 − dB IF = 1 mA; f = 1800 MHz 0.20 − dB IF = 1 mA; f = 2450 MHz 0.25 − dB IF = 10 mA; f = 900 MHz 0.10 − dB IF = 10 mA; f = 1800 MHz 0.16 − dB IF = 10 mA; f = 2450 MHz 0.20 − dB IF = 100 mA; f = 900 MHz 0.09 − dB IF = 100 mA; f = 1800 MHz 0.14 − dB IF = 100 mA; f = 2450 MHz 0.18 − dB τL charge carrier life time when switched from IF = 10 mA to 310 IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − ns LS series inductance IF = 100 mA; f = 100 MHz − nH 0.6 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point Rev. 04 - 8 January 2008 VALUE UNIT 85 K/W 3 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP63-02 GRAPHICAL DATA MGW126 10 MGW127 400 handbook, halfpage handbook, halfpage Cd (fF) rD (Ω) 300 1 200 100 10 −1 10 −1 1 10 I F (mA) 0 4 8 12 f = 1 MHz; Tj = 25 °C. Forward resistance as a function of forward current; typical values. Fig.3 Diode capacitance as a function of reverse voltage; typical values. MGW128 0 MGW129 0 handbook, halfpage 2 | s 21| handbook, halfpage 2 | s 21| (1) (dB) −0.1 20 16 VR (V) f = 100 MHz; Tj = 25 °C. Fig.2 0 102 (dB) −10 (2) (3) −0.2 (4) −20 −0.3 −30 −0.4 −0.5 0 1 (1) IF = 100 mA. (2) IF = 10 mA. 2 f (GHz) 3 0 1 2 f (GHz) 3 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 −40 Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|s21|2) of the diode in on-state as a function of frequency; typical values. Fig.5 Rev. 04 - 8 January 2008 Isolation (|s21|2) of the diode in off-state as a function of frequency; typical values. 4 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP63-02 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 Rev. 04 - 8 January 2008 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 5 of 7 BAP63-02 NXP Semiconductors Silicon PIN diode Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 8 January 2008 6 of 7 BAP63-02 NXP Semiconductors Silicon PIN diode Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BAP63-02_N_4 20080108 Product data sheet - BAP63-02_3 Modifications: • Package outline drawing on page 5 changed BAP63-02_3 (9397 750 08261) 20010518 Product specification - BAP63-02_N_2 BAP63-02_N_2 (9397 750 08141) 20010320 Preliminary specification - BAP63-02_N_1 BAP63-02_N_1 (9397 750 08051) 20010220 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 January 2008 Document identifier: BAP63-02_N_4