KEXIN BAP63-02

Diodes
SMD Type
Silicon PIN diode
BAP63-02
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
+0.05
0.8-0.05
Features
+
+0.1
0.6-0.1
-
High speed switching for RF signals
Low diode capacitance
+0.1
1.6-0.1
0.77max
Low diode forward resistance
For applications up to 3 GHz.
+0.05
0.1-0.02
0.07max
Very low series inductance.
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym b o l
M in
M ax
U n it
c o n tin u o u s re ve rs e vo lta g e
VR
50
V
c o n tin u o u s fo rw a rd c u rre n t
IF
100
mA
P to t
715
mW
to ta l p o w e r d is s ip a tio n
TS
90
s to ra g e te m p e ra tu re
T s tg
-6 5
+150
ju n c tio n te m p e ra tu re
Tj
-6 5
+150
th e rm a l re s is ta n c e fro m ju n c tio n to s o ld e rin g p o in t
R th
j-s
85
K /W
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1
Diodes
SMD Type
BAP63-02
Electrical Characteristics Ta = 25
Symbol
Conditions
Typ
Max
Unit
forward voltage
Parameter
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
IR
V R = 35 V
10
nA
V R = 0; f = 1 MHz
0.36
diode capacitance
Cd
V R = 1 V; f = 1 MHz
0.32
diode forward resistance
rD
|s21|2
isolation
|s21|2
insertion loss
|s21|2
insertion loss
insertion loss
|s21|
insertion loss
|s21|
2
2
V R = 20V; f = 1 MHz
0.25
0.32
IF = 0.5 mA; f = 100 MHz; note 1
2.5
3.5
IF = 1 mA; f = 100 MHz; note 1
1.95
3
IF = 10 mA; f = 100 MHz; note 1
1.17
1.8
IF = 100 mA; f = 100 MHz; note 1
0.9
1.5
V R = 0; f = 900 MHz
15.6
V R = 0; f = 1800 MHz
10.3
V R = 0; f = 2450 MHz
8.3
V R = 0.5; f = 900 MHz
0.19
V R = 0.5; f = 1800 MHz
0.24
V R = 0.5; f = 2450 MHz
0.28
V R = 1; f = 900 MHz
0.16
V R = 1; f = 1800 MHz
0.20
V R = 1; f = 2450 MHz
0.25
V R = 10; f = 900 MHz
0.10
V R = 10; f = 1800 MHz
0.16
V R = 10; f = 2450 MHz
0.20
V R = 100; f = 900 MHz
0.09
V R = 100; f = 1800 MHz
0.14
V R = 100; f = 2450 MHz
0.18
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
L
R L = 100
series inductance
LS
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
2
K5
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dB
dB
dB
dB
dB
310
s
0.6
nH
;measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
Note
Marking
pF