Diodes SMD Type Silicon PIN diode BAP63-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High speed switching for RF signals Low diode capacitance +0.1 1.6-0.1 0.77max Low diode forward resistance For applications up to 3 GHz. +0.05 0.1-0.02 0.07max Very low series inductance. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym b o l M in M ax U n it c o n tin u o u s re ve rs e vo lta g e VR 50 V c o n tin u o u s fo rw a rd c u rre n t IF 100 mA P to t 715 mW to ta l p o w e r d is s ip a tio n TS 90 s to ra g e te m p e ra tu re T s tg -6 5 +150 ju n c tio n te m p e ra tu re Tj -6 5 +150 th e rm a l re s is ta n c e fro m ju n c tio n to s o ld e rin g p o in t R th j-s 85 K /W www.kexin.com.cn 1 Diodes SMD Type BAP63-02 Electrical Characteristics Ta = 25 Symbol Conditions Typ Max Unit forward voltage Parameter VF IF = 50 mA 0.95 1.1 V reverse leakage current IR V R = 35 V 10 nA V R = 0; f = 1 MHz 0.36 diode capacitance Cd V R = 1 V; f = 1 MHz 0.32 diode forward resistance rD |s21|2 isolation |s21|2 insertion loss |s21|2 insertion loss insertion loss |s21| insertion loss |s21| 2 2 V R = 20V; f = 1 MHz 0.25 0.32 IF = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 IF = 1 mA; f = 100 MHz; note 1 1.95 3 IF = 10 mA; f = 100 MHz; note 1 1.17 1.8 IF = 100 mA; f = 100 MHz; note 1 0.9 1.5 V R = 0; f = 900 MHz 15.6 V R = 0; f = 1800 MHz 10.3 V R = 0; f = 2450 MHz 8.3 V R = 0.5; f = 900 MHz 0.19 V R = 0.5; f = 1800 MHz 0.24 V R = 0.5; f = 2450 MHz 0.28 V R = 1; f = 900 MHz 0.16 V R = 1; f = 1800 MHz 0.20 V R = 1; f = 2450 MHz 0.25 V R = 10; f = 900 MHz 0.10 V R = 10; f = 1800 MHz 0.16 V R = 10; f = 2450 MHz 0.20 V R = 100; f = 900 MHz 0.09 V R = 100; f = 1800 MHz 0.14 V R = 100; f = 2450 MHz 0.18 when switched from IF = 10 mA to IR = 6 mA; charge carrier life time L R L = 100 series inductance LS 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking 2 K5 www.kexin.com.cn dB dB dB dB dB 310 s 0.6 nH ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz Note Marking pF