Product specification BAP63-03 SOD-323 Unit: mm ■ Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High speed switching for RF signals +0.1 1.3-0.1 ● Low diode capacitance ● Low diode forward resistance +0.1 2.6-0.1 1.0max ● Very low series inductance 0.375 +0.05 0.1-0.02 0.475 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Continuous reverse voltage VR 50 V Continuous forward current IF 100 mA Total power dissipation TS = 90℃ Ptot 500 mW Storage temperature Tstg -65 to +150 ℃ Junction temperature Tj 150 ℃ Rth( j-s) 120 ℃/W Thermal resistance from junction to soldering point http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification BAP63-03 ■ Electrical Characteristics Ta = 25℃ Symbol Test conditons Forward voltage Parameter VF IF = 50 mA Reverse voltage VR IR = 10 μA Reverse current IR Diode capacitance rD 2 isolation |S21| 2 insertion loss |S21| 2 insertion loss |S21| 2 insertion loss |S21| 2 insertion loss |S21| charge carrier life time τL series inductance LS Typ Max Unit 0.95 1.1 V 50 V VR = 35 V Cd Diode forward resistance Min 10 nA VR = 0; f = 1 MHz 0.4 pF VR = 1 V; f = 1 MHz 0.35 pF VR = 20 V; f = 1 MHz 0.27 0.32 pF IF = 0.5 mA; f = 100 MHz 2.5 3.5 Ω IF = 1 mA; f = 100 MHz 1.95 3 Ω IF = 10 mA; f = 100 MHz 1.17 1.8 Ω IF = 100 mA; f = 100 MHz 0.95 1.5 Ω VR = 0; f = 900 MHz 15.4 dB VR = 0; f = 1800 MHz 10.1 dB VR = 0; f = 2450 MHz 7.8 dB VR = 0.5mA; f = 900 MHz 0.21 dB VR = 0.5mA; f = 1800 MHz 0.28 dB VR = 0.5mA; f = 2450 MHz 0.38 dB VR = 1mA; f = 900 MHz 0.18 dB VR = 1mA; f = 1800 MHz 0.26 dB VR = 1mA; f = 2450 MHz 0.35 dB VR = 10mA; f = 900 MHz 0.13 dB VR = 10mA; f = 1800 MHz 0.20 dB VR = 10mA; f = 2450 MHz 0.30 dB VR = 100mA; f = 900 MHz 0.10 dB VR = 100mA; f = 1800 MHz 0.18 dB VR = 100mA; f = 2450 MHz 0.28 dB When switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 310 ns 1.5 nH ■ Marking Marking D2 http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification BAP63-03 ■ Typical Characteristics 10 500 handbook, halfpage handbook, halfpage Cd rD (Ω) (fF) 400 300 1 200 100 10 −1 10 −1 1 10 I F (mA) 0 102 4 0 12 16 20 VR (V) Tj = 25 °C; f = 100 MHz. Tj = 25 °C; f = 1 MHz. Fig.1 Forward resistance as a function of the Fig.2 Diode capacitance as a function of reverse forward current; typical values. voltage; typical values. 0 0 handbook, halfpage 2 handbook, halfpage 2 | s 21| (dB) −0.1 8 | s 21| (1) (dB) −10 (2) (3) −0.2 −20 (4) −0.3 −30 −0.4 −0.5 0 (1) IF = 100 mA. (2) IF = 10 mA. 1 2 f (GHz) 3 −40 0 1 2 f (GHz) 3 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.3 Insertion loss ( |S21|2 ) of the diode in on-state as a function of frequency; typical values. http://www.twtysemi.com [email protected] Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Fig.4 Isolation ( |S21|2 ) of the diode in off-state as a function of frequency; typical values. 4008-318-123 3 of 3