SUD08P06-155L-GE3 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 • TrenchFET® Power MOSFETS RDS(on) () ID (A) 0.155 at VGS = - 10 V - 8.4 0.280 at VGS = - 4.5 V - 7.4 Qg (Typ) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 12.5 TO-252 S G Drain Connected to Tab G D S D Top View Ordering Information: SUD08P06-155L-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V - 8.2 ID - 5.2 IDM - 18 Continuing Source Current (Diode Conduction) IS - 8.4 Avalanche Current IAS - 12 Pulsed Drain Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °C EAS 7.2 mJ 20.8a PD W 1.7b TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 10 s Junction-to-Ambientb Steady State RthJA RthJC Junction-to-Case Typical Maximum 20 25 62 75 5 6 Unit °C/W Notes: a. See SOA curve for voltage derating. b. Surface mounted on 1" x 1" FR-4 boad. Document Number: 62843 S13-0788-Rev. A, 15-Apr-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD08P06-155L-GE3 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. -2 -3 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currentb -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 150 ID(on) VDS = -5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A Drain-Source On-State Resistanceb b Forward Transconductance Dynamic RDS(on) ± 100 VDS = - 60 V, VGS = 0 V - 10 VGS = - 10 V, ID = - 5 A, TJ = 150 °C 0.350 VGS = - 4.5 V, ID = - 2 A 0.158 VDS = - 15 V, ID = - 5 A 8 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg 12.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg td(on) Turn-Off Delay Timec td(off) Turn-On Delay Time Rise Timec tr Fall Timec VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A VDD = - 30 V, RL = 3.57 ID - 8.4 A, VGEN = - 10 V, RG = 2.5 Forward Voltage trr Reverse Recovery Time Qrr S pF 65 19 nC 2.3 8 5 10 14 25 15 25 7 12 - 20 A - 0.9 - 1.3 V ns °C)b ISM VSD Reverse Recovery Time 0.280 3.2 f = 1 MHz Source-Drain Diode Ratings and Characteristics (TC = 25 b 450 VDS = - 25 V, VGS = 0 V, f = 1 MHz tf Pulsed Current µA 0.155 0.280 Input Capacitance c nA A 0.125 VGS = - 10 V, ID = - 5 A, TJ = 125 °C gfs V IF = - 2 A, VGS = 0 V IF = - 8 A, dI/dt = 100 A/µs 50 80 ns 80 120 nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62843 S13-0788-Rev. A, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD08P06-155L-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 30 20 TC = - 55 °C VGS = 10 thru 6 V 25 °C 16 ID - Drain Current (A) I D - Drain Current (A) 24 5V 18 12 4V 6 125 °C 12 8 4 3V 0 0 2 4 6 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 12 TC = - 55 °C 0.25 25 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 10 125 °C 8 6 4 2 VGS = 4.5 V 0.20 VGS = 10 V 0.15 0.10 0.05 0.00 0 0 2 4 6 8 0 10 4 8 ID - Drain Current (A) 16 20 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 800 V GS - Gate-to-Source Voltage (V) 700 600 C - Capacitance (pF) 12 Ciss 500 400 300 200 Coss 100 Crss 0 0 VDS = 30 V ID = 8.4 A 16 12 8 4 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 60 0 5 10 20 25 Qg - Total Gate Charge (nC) Capacitance Document Number: 62843 S13-0788-Rev. A, 15-Apr-13 15 For technical questions, contact: [email protected] Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD08P06-155L-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 10 1.7 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.8 0.001 0.5 - 50 - 25 0 25 50 75 100 125 0.0 150 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 10 100 8 10 ID - Drain Current (A) ID - Drain Current (A) THERMAL RATINGS 6 4 100 μs Limited by RDS(on)* 1 ms 1 10 ms DC, 10 s, 1 s, 100 ms 0.1 0.01 2 TC = 25 °C Single Pulse BVDSS Limited 0.001 0 0 25 50 75 100 125 TC - Case Temperature (°C) Drain Current vs. Case Temperature www.vishay.com 4 150 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area For technical questions, contact: [email protected] Document Number: 62843 S13-0788-Rev. A, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD08P06-155L-GE3 Vishay Siliconix THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62843. Document Number: 62843 S13-0788-Rev. A, 15-Apr-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000