2SB1119/2SD1619 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b C L e e1 Dimensions In Millimeters Symbol Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise Parameter Symbol Test 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 specified˅CLASSIFICATION OF conditions Dimensions In Inches Min MIN TYP hFE(1) MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10A ˈIE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -10 AˈIC=0 -5 V Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 A Emitter cut-off current IEBO VEB=-4V , -0.1 A hFE˄1˅ VCE= -2V, IC= -50mA hFE˄2˅ VCE=-2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-0.5A, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC=-0.5A, IB= -50mA -1.2 V IC=0 100 560 DC current gain Transition frequency fT VCE= -10V, Collector output capacitance Cob VCB=-10V, f = 1MH Marking 2SB1119 : 2SD1619 : 40 IC=-50mA 180 MHz 25 pF BB DB CLASSIFICATION OF hFE(1) Rank R Range 100-200 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A S 140-280 T U 200-400 280-560 Any changing of specification will not be informed individual Page 1 of 3 2SB1119/2SD1619 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SB1119/2SD1619 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3