2SB766 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -30 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b C L e e1 Dimensions In Millimeters Symbol Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e Symbol Test 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise Parameter Dimensions In Inches Min specified˅ conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10PA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-10PA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 PA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 PA hFE(1) VCE=-10V, IC=-500mA 85 hFE(2) VCE=-5V, IC=-1A 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V fT VCE=-10V, IC=-50mA, f=200MHz 200 Cob VCB=-10V, IE=0, f=1MHz 20 340 DC current gain Transition frequency Collector output capacitance MHz 30 pF CLASSIFICATION OF hFE(1) Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q R S 85-170 120-240 170-340 AQ AR AS Any changing of specification will not be informed individual Page 1 of 2 2SB766 PNP Silicon Medium Power Transistor Elektronische Bauelemente IC ⎯ VCE Collector power dissipation PC (W) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ta = 25°C −1.25 IB = −10 mA −9 mA Collector current IC (A) 1.2 1.0 −8 mA −7 mA −6 mA −1.00 0.8 −5 mA − 0.75 0.6 −4 mA −3 mA − 0.50 0.4 −2 mA − 0.25 0.2 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) −1 mA −2 0 −4 Forward current transfer ratio hFE −10 Ta = −25°C −1 75°C − 0.1 − 0.01 − 0.01 − 0.1 −1 Ta = 75°C 25°C −25°C − 0.01 − 0.01 − 0.1 400 Ta = 75°C 300 25°C 200 −25°C 100 0 − 0.01 −10 − 0.1 −1 −10 Collector current IC (A) fT ⎯ I E 500 −1 −10 Collector current IC (A) Cob ⎯ VCB 200 VCB = −10 V Ta = 25°C 160 120 80 40 0 1 10 100 Emitter current IE (mA) Safe operation area −10 IE = 0 f = 1 MHz Ta = 25°C Single pulse Ta = 25°C ICP 40 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob −1 − 0.1 VCE = −10 V Collector current IC (A) 50 −10 −10 hFE ⎯ IC 600 IC / IB = 10 25°C −8 IC / IB = 10 Collector-emitter voltage VCE (V) VBE(sat) ⎯ IC −100 −6 −100 Transition frequency fT (MHz) 0 Base-emitter saturation voltage VBE(sat) (V) VCE(sat) ⎯ IC −1.50 Collector-emitter saturation voltage VCE(sat) (V) PC ⎯ Ta 1.4 30 −1 IC t = 10 ms t=1s − 0.1 20 − 0.01 10 0 −1 −10 −100 Collector-base voltage VCB (V) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A − 0.001 − 0.01 − 0.1 −1 −10 Collector-emitter voltage VCE (V) Any changing of specification will not be informed individual Page 2 of 2