2SB772Q PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -3 3.EMITTER Collector-base voltage V VB(BR)CBO : -40 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b C L e e1 Dimensions In Millimeters Symbol Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise Parameter Symbol Test Dimensions In Inches Min 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 specified˅CLASSIFICATION OF conditions MIN TYP hFE(1) MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100A ˈIE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 AˈIC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -1 A Collector cut-off current ICEO VCE=-30 V , IB=0 -10 A Emitter cut-off current IEBO VEB=-6V , -1 A hFE˄1˅ VCE= -2V, IC= -1A 60 hFE˄2˅ VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V IB=0 IC=0 400 DC current gain VCE= -5V, Transition frequency IC=-0.1A fT 50 MHz f = 10MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SB772Q PNP Silicon Medium Power Transistor Elektronische Bauelemente RATING AND CHARACTERISTIC CURVES Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA 0.8 -IB=4mA 12 100 S/ 50 b ite d lim 0 0 4 8 12 16 4 d -IB=1mA 0 8 ite -IB=2mA 0 20 -50 0 50 100 150 -50 200 0 50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance Fig.5 Current gainbandwidth product Fig.6 Safe operating area Ic(max),Pulse 2 10 1 10 0 -1 10 -2 10 2 10 IB=8mA 1 10 0 10 -3 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product IE=0 f=1MHz VCE=5V -2 10 -1 10 10 0 1 10 -Collector-Base Voltage(v) Ic,Collector current(A) Fig.7 DC current gain Fig.8 Saturation Voltage 3 10 Ic(max),DC 10 mS 1m S 200 S 1m 0. 1 10 10 10 150 Tc,Case Temperature(°C) 3 10 0 10 100 -Collector-Emitter voltage(V) 3 10 Output Capacitance(pF) lim n -IB=3mA 0.4 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA io at ip ss Di -Ic,Collector current(A) 150 1.6 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) Any changing of specification will not be informed individual Page 2 of 2