Protection Device TVS (Transient Voltage Suppressor) ESD218-B1 Series Bi-directional, 24 V, 3 pF, 0201, 0402, RoHS and Halogen Free compliant ESD218-B1-02ELS ESD218-B1-02EL Data Sheet Revision 1.1, 2015-01-13 Final Power Management & Multimarket Edition 2015-01-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD218-B1 Series Product Overview 1 Product Overview 1.1 Features • • • • • • ESD / transient protection according to: – IEC61000-4-2 (ESD): ±20 kV (air), ±18 kV (contact) – IEC61000-4-4 (EFT): ±2 kV / 40 A (5/50 ns) – IEC61000-4-5 (Surge): ±1.5 A (8/20 μs) Bi-directional, working voltage up to VRWM = ±24 V Low capacitance: CL = 3 pF (typical) Low clamping voltage: VCL = 51 V (typical) at ITLP = 16 A Very low reverse current. IR = < 1nA (typical) Pb-free (RoHS compliant) and halogen free package 1.2 • • • • Application Examples ESD protection of USB-battery charger interface LCD Backlight protection NFC antenna protection Protection of high speed bus rated up to ±24 V 1.3 Product Description Pin 1 marking (lasered) Pin 1 Pin 1 Pin 2 Pin 2 PinConf_and_SchematicDiag.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Part Information Type Package Configuration Marking code ESD218-B1-02ELS TSSLP-2-4 1 line, bi-directional 4 ESD218-B1-02EL TSLP-2-20 1 line, bi-directional AA Final Data Sheet 3 Revision 1.1, 2015-01-13 ESD218-B1 Series Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified 1) Parameter Symbol 2) Values Unit ESD air discharge ESD contact discharge2) VESD ±20 ±18 kV Peak pulse power3) PPK 67 W Peak pulse current3) IPP ±1.5 A Operating temperature range TOP -55 to 150 °C Storage temperature Tstg -65 to 150 °C 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 Electrical Characteristics $% & %' & %( & &( !" !! # Figure 3-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.1, 2015-01-13 ESD218-B1 Series Electrical Characteristics Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM -24 – 24 V Breakdown voltage VBR 24.3 25.5 30 V IT = 1 mA Reverse leakage current IR – <1 50 nA VR = 24 V Unit Note / Test Condition 1) Device is electrically symmetrical Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Line capacitance CL – – 3 3 3.5 3.5 pF VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz Series inductance LS – – 0.2 0.4 – – nH ESD218-B1-02ELS ESD218-B1-02EL Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol 2) Clamping voltage VCL 3) Clamping voltage Dynamic resistance 2) RDYN Values Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns Min. Typ. Max. – 51 55.5 – 66 70.5 ITLP = 30 A, tp = 100 ns – 37 41.5 IPP = 1 A, tp = 8/20 µs 40 44.5 IPP = 1.5 A, tp = 8/20 µs 0.9 – – Ω tp = 100 ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps. 3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Final Data Sheet 5 Revision 1.1, 2015-01-13 ESD218-B1 Series Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical characteristics diagrams at TA = 25°C, unless otherwise specified -7 10 -8 10 -9 IR [A] 10 -10 10 -11 10 10-12 -13 10 -24 -20 -16 -12 -8 -4 0 4 VR [V] 8 12 16 20 24 Figure 4-1 Reverse leakage current: IR = f(VR) 3.5 3 CL [pF] 2.5 1 MHz 2 1.5 1 GHz 1 0.5 0 -20 -15 -10 -5 0 VR [V] 5 10 15 20 Figure 4-2 Line capacitance: CL = f(VR) Final Data Sheet 6 Revision 1.1, 2015-01-13 ESD218-B1 Series Typical Characteristics Diagrams 100 Scope: 6 GHz, 20 GS/s 80 VCL [V] 60 VCL-max-peak = 94 V 40 VCL-30ns-peak = 48 V 20 0 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 0 VCL [V] -20 -40 VCL-max-peak = -94 V -60 VCL-30ns-peak = -47 V -80 -100 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-4 Clamping voltage (ESD) VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 Final Data Sheet 7 Revision 1.1, 2015-01-13 ESD218-B1 Series Typical Characteristics Diagrams 180 Scope: 6 GHz, 20 GS/s 160 140 VCL [V] 120 VCL-max-peak = 170 V 100 80 VCL-30ns-peak = 60 V 60 40 20 0 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-5 Clamping voltage (ESD) VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 0 -20 VCL [V] -40 -60 -80 -100 VCL-max-peak = -158 V -120 VCL-30ns-peak = -55 V -140 -160 -180 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-6 Clamping voltage (ESD) VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 Final Data Sheet 8 Revision 1.1, 2015-01-13 ESD218-B1 Series Typical Characteristics Diagrams 30 15 ESD218-B1-02series RDYN 25 12.5 20 10 15 7.5 10 5 5 2.5 0 0 -5 -2.5 -10 -5 -15 -7.5 Equivalent VIEC [kV] ITLP [A] RDYN = 0.9 Ω RDYN = 0.9 Ω -20 -10 -25 -12.5 -30 -15 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 VTLP [V] Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP)[1], pin 2 to pin 1 Final Data Sheet 9 Revision 1.1, 2015-01-13 ESD218-B1 Series Typical Characteristics Diagrams 2.5 2 1.5 1 IPP [A] 0.5 0 -0.5 -1 -1.5 -2 -2.5 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 VCL [V] Figure 4-8 Clamping voltage(Surge): IPP = f(VCL)[1] Final Data Sheet 10 Revision 1.1, 2015-01-13 ESD218-B1 Series Package Information 5 Package Information 5.1 TSSLP-2-4 Top view Bottom view 0.31 +0.01 -0.02 0.32 ±0.05 0.355 0.62 ±0.05 2 Pin 1 marking 0.05 MAX. 0.26 ±0.035 0.2 ±0.035 1) 1 1) 1) Dimension applies to plated terminals TSSLP-2-3, -4-PO V01 Figure 5-1 TSSLP-2-4 Package outline 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-3, -4-FP V02 Figure 5-2 TSSLP-2-4 Footprint 0.35 4 8 Ey Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Pin 1 marking Ex TSSLP-2-3, -4-TP V03 Figure 5-3 TSSLP-2-4 Packing 1 Type code Pin 1 marking TSSLP-2-3, -4-MK V01 Figure 5-4 TSSLP-2-4 Marking example, Type code see: Table 1-1 “Part Information” on Page 3 Final Data Sheet 11 Revision 1.1, 2015-01-13 ESD218-B1 Series Package Information 5.2 TSLP-2-20 Top view Bottom view 0.31 +0.01 -0.02 0.6 ±0.05 1±0.05 2 1 0.25 ±0.035 1) 0.65 ±0.05 0.05 MAX. 0.5 ±0.035 1) Pin 1 marking 1) Dimension applies to plated terminals TSLP-2-19, -20-PO V01 Figure 5-5 TSLP-2-20 Package outline 0.28 0.35 Solder mask 0.38 0.93 0.3 1 Copper 0.28 0.45 0.35 0.6 Stencil apertures TSLP-2-19, -20-FP V01 Figure 5-6 TSLP-2-20 Footprint 0.4 1.16 Pin 1 marking 8 4 0.76 TSLP-2-19, -20-TP V02 Figure 5-7 TSLP-2-20 Packing Type code 12 Pin 1 marking TSLP-2-19, -20-MK V01 Figure 5-8 TSLP-2-20 Marking example, Type code see: Table 1-1 “Part Information” on Page 3 Final Data Sheet 12 Revision 1.1, 2015-01-13 ESD218-B1 Series References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages Final Data Sheet 13 Revision 1.1, 2015-01-13 ESD218-B1 Series Revision History: Rev. 1.0, 2014-04-08 Page or Item Subjects (major changes since previous revision) Revision 1.1, 2015-01-13 11 Correction of Footprint drawing Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 14 Revision 1.1, 2015-01-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG