New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET APPLICATIONS • LCD TV CCFL Inverter • Load Switch SO-8 D2 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 4.3 ID 4.3b, c 3.4b, c IDM Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0 1 mH TC = 70 °C TA = 25 °C 2.6 IS 1.7b, c IAS 11 EAS 6.1 mJ 3.1 2 PD W 2b, c 1.3b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 20 TC = 25 °C Maximum Power Dissipation V 5.3 TA = 70 °C Pulsed Drain Current (10 µs Width) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, d Maximum Junction-to-Foot (Drain) Steady State Symbol Typical Maximum RthJA 55 62.5 RthJF 33 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 www.vishay.com 1 New Product Si9945BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IDSS On-State Drain Currenta ID(on) Forward Transconductancea 1 gfs 3 2.5 VDS = 0 V, VGS = 20 V 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) mV/°C -6 VDS = VGS, ID = 5 mA IGSS Zero Gate Voltage Drain Current Drain-Source On-State Resistancea ID = 250 µA VDS = VGS, ID = 250 µA V 55 20 V nA µA A VGS = 10 V, ID = 4.3 A 0.046 0.058 VGS = 4.5 V, ID = 3.9 A 0.059 0.072 VDS = 15 V, ID = 4.3 A 15 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 665 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 75 40 VDS = 30 V, VGS = 10 V, ID = 4.3 A VDS = 30 V, VGS = 4.5 V, ID = 4.3 A 13 20 6 9 2.3 nC 2.6 f = 1 MHz td(on) VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) Ω 2 15 25 65 100 15 25 tf 10 15 td(on) 10 15 VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 15 25 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD 2.6 20 IS = 1.7 A, VGS = 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 32 50 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 25 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V 18 4 I D - Drain Current (A) I D - Drain Current (A) 16 14 12 10 8 6 3 2 TC = 125 °C 4 1 25 °C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 55 °C 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.080 800 0.070 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.075 0.065 VGS = 4.5 V 0.060 0.055 VGS = 10 V Ciss 600 400 0.050 200 Coss 0.045 Crss 0 0.040 0 2 4 6 8 10 12 14 16 18 0 20 10 20 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.0 10 VDS = 30 V ID = 4.3 A 1.8 6 4 VGS = 10 V ID = 4.3 A 1.6 (Normalized) 8 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 30 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 1 0.0 0.12 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 20 ID = 250 µA 2.4 Power (W) VGS(th) (V) 2.6 2.2 2.0 15 10 1.8 5 1.6 1.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 0.01 0.001 0.1 TA = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 6 3.5 5 Power Dissipation (W) 3.0 ID - Drain Current (A) 4 3 2 1 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 IC - Peak Avalanche Current (A) 100 10 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 www.vishay.com 5 New Product Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64737. www.vishay.com 6 Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000