Si9945BDY Datasheet

New Product
Si9945BDY
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.058 at VGS = 10 V
5.3
0.072 at VGS = 4.5 V
4.7
VDS (V)
60
Qg (Typ.)
13 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
APPLICATIONS
• LCD TV CCFL Inverter
• Load Switch
SO-8
D2
D1
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
Top View
Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
4.3
ID
4.3b, c
3.4b, c
IDM
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0 1 mH
TC = 70 °C
TA = 25 °C
2.6
IS
1.7b, c
IAS
11
EAS
6.1
mJ
3.1
2
PD
W
2b, c
1.3b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
20
TC = 25 °C
Maximum Power Dissipation
V
5.3
TA = 70 °C
Pulsed Drain Current (10 µs Width)
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, d
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
Typical
Maximum
RthJA
55
62.5
RthJF
33
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
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1
New Product
Si9945BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IDSS
On-State Drain Currenta
ID(on)
Forward Transconductancea
1
gfs
3
2.5
VDS = 0 V, VGS = 20 V
100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 85 °C
10
VDS ≥ 5 V, VGS = 10 V
RDS(on)
mV/°C
-6
VDS = VGS, ID = 5 mA
IGSS
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
ID = 250 µA
VDS = VGS, ID = 250 µA
V
55
20
V
nA
µA
A
VGS = 10 V, ID = 4.3 A
0.046
0.058
VGS = 4.5 V, ID = 3.9 A
0.059
0.072
VDS = 15 V, ID = 4.3 A
15
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
665
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
75
40
VDS = 30 V, VGS = 10 V, ID = 4.3 A
VDS = 30 V, VGS = 4.5 V, ID = 4.3 A
13
20
6
9
2.3
nC
2.6
f = 1 MHz
td(on)
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
Ω
2
15
25
65
100
15
25
tf
10
15
td(on)
10
15
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
15
25
20
30
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
2.6
20
IS = 1.7 A, VGS = 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
32
50
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
25
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 thru 4 V
18
4
I D - Drain Current (A)
I D - Drain Current (A)
16
14
12
10
8
6
3
2
TC = 125 °C
4
1
25 °C
3V
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 55 °C
0
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.080
800
0.070
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
0.075
0.065
VGS = 4.5 V
0.060
0.055
VGS = 10 V
Ciss
600
400
0.050
200
Coss
0.045
Crss
0
0.040
0
2
4
6
8
10
12
14
16
18
0
20
10
20
40
50
60
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
10
VDS = 30 V
ID = 4.3 A
1.8
6
4
VGS = 10 V
ID = 4.3 A
1.6
(Normalized)
8
R DS(on) - On-Resistance
V GS - Gate-to-Source Voltage (V)
30
1.4
1.2
1.0
2
0.8
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
R DS(on) - Drain-to-Source On-Resistance (mΩ)
20
TJ = 150 °C
I S - Source Current (A)
10
TJ = 25 °C
0.11
0.10
0.09
0.08
0.07
ID = 4.3 A
0.06
0.05
0.04
1
0.0
0.12
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
25
2.8
20
ID = 250 µA
2.4
Power (W)
VGS(th) (V)
2.6
2.2
2.0
15
10
1.8
5
1.6
1.4
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
I D - Drain Current (A)
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
0.01
0.001
0.1
TA = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
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Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
6
3.5
5
Power Dissipation (W)
3.0
ID - Drain Current (A)
4
3
2
1
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
IC - Peak Avalanche Current (A)
100
10
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
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New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64737.
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Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000