SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25 °C Maximum Power Dissipationb TA = 25 °C Operating Junction and Storage Temperature Range V 110a 87a 440 IAR 75 EAR 280 PD Unit 375c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)d Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 www.vishay.com 1 SUM110N10-09 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 RDS(on) VGS = 10 V, ID = 30 A, TJ = 125 °C gfs VDS = 15 V, ID = 30 A nA µA A 0.0078 0.0095 0.017 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V Ω 0.025 25 S Dynamicb 6700 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg 110 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Time VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 85 A Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current 160 24 1.0 td(on) tr pF nC 24 Rg c 750 6.2 20 30 125 200 55 85 130 195 IS 110 ISM 240 Forward Voltagea VSD Peak Reverse Recovery Charge Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb Pulsed Current Reverse Recovery Time Ω IF = 50 A, dI/dt = 100 A/µs A 1.0 1.5 V 70 140 ns 5.5 10 A 0.19 0.35 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 6V VGS = 10 V thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 100 5V 150 100 TC = 125 °C 50 50 - 55 °C 25 °C 4V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage Transfer Characteristics Output Characteristics 0.015 250 R D S(on) - On-Resistance (Ω) 200 25 °C 150 125 °C 100 g fs - Transconductance (S) TC = - 55 °C 50 0.012 VGS = 10 V 0.009 0.006 0.003 0.000 0 0 20 40 60 80 100 0 120 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 10 000 VG S - Gate-to-Source Voltage (V) VDS = 50 V ID = 85 A C - Capacitance (pF) 8000 Ciss 6000 4000 2000 16 12 8 4 Coss Crss 0 0 0 25 50 75 100 0 50 100 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 200 www.vishay.com 3 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 V GS = 10 V ID = 30 A I S - Source Current (A) 2.0 (Normalized) R DS(on) - On-Resistance 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 T J - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 125 120 ID = 10 mA 100 115 V(BR)DSS (V) I Dav (A) IAV (A) at T A = 25 °C 10 IAV (A) at T A = 150 °C 110 105 100 1 95 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 90 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 SUM110N10-09 Vishay Siliconix THERMAL RATINGS 1000 120 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 100 µs Limited by R DS(on)* 10 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 20 0 0 25 50 75 100 125 150 175 0.1 0.1 TC - Ambient Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70677. Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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