SUM110P04-05 Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C - 110a ID 39b, c 33b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current TC = 25 °C TA = 25 °C L = 0.1 mH Single-Pulse Avalanche Energy TC = 70 °C TA = 25 °C 110 IS 10b, c IAS 75 EAS 281 Soldering Recommendations (Peak mJ 375 262 PD W 15b, c 10.5b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 240 TC = 25 °C Maximum Power Dissipation V - 110a TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 8 10 Steady State RthJC 0.33 0.4 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73493 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110P04-05 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 40 mV/°C - 5.5 -2 -3 -4 V ± 100 nA VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ 5 V, VGS = - 10 V - 120 µA A rDS(on) VGS = - 10 V, ID = - 20 A 0.0041 gfs VDS = - 15 V, ID = - 20 A 75 0.005 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1000 Total Gate Charge Qg 185 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 11300 VDS = - 25 V, VGS = 0 V, f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 110 A tr Rise Time td(off) Turn-Off Delay Time nC 48 Ω f = 1 MHz 4.0 25 40 VDD = - 20 V, RL = 0.18 Ω ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω 290 440 110 165 35 55 tf Fall Time 280 42 td(on) Turn-On Delay Time pF 1510 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 110 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 240 IS = - 20 A IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.5 V 70 105 ns 130 200 nC 37 33 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73493 S-80274-Rev. B, 11-Feb-08 SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 200 VGS = 10 thru 7 V 6V 120 I D - Drain Current (A) I D - Drain Current (A) 160 5V 80 30 20 25 °C 10 40 - 55 °C TC = 125 °C 4V 0 0 0.0 0.5 1.0 1.5 0 2.0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 6 16000 Ciss 12000 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 14000 0.008 0.006 VGS = 10 V 0.004 10000 8000 6000 4000 0.002 Coss 2000 0.000 Crss 0 0 20 40 60 80 100 120 0 10 ID - Drain Current (A) 30 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 20 A 8 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 20 VDS = 20 V 6 VDS = 32 V 4 1.5 VGS = 10 V 1.2 0.9 2 0 0 40 80 120 160 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73493 S-80274-Rev. B, 11-Feb-08 200 240 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 0.04 0.03 TA = 150 °C 0.02 0.01 TA = 25 °C 0.00 1 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.1 35 ID =10 mA 0.9 30 25 0.5 Power (W) VGS(th) Variance (V) 0.7 0.3 0.1 20 15 - 0.1 10 - 0.3 5 - 0.5 - 50 - 25 0 25 50 75 100 125 150 TC = 25 °C 0 0.0001 175 0.001 TJ - Temperature (°C) 0.01 0.1 1.00 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Limited by rDS(on)* I D - Drain Current (A) 10 µs 100 µs 100 1 ms 10 ms 100 ms DC 10 Single Pulse TC = 25 °C 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73493 S-80274-Rev. B, 11-Feb-08 SUM110P04-05 Vishay Siliconix 240 400 210 350 180 300 150 250 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 90 200 150 Package Limited 60 100 30 50 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Max. Avalanche and Drain Current vs. Case Temperature* Power Derating, Junction-to-Case 175 1 Normalized Effective Transient Thermal Impedance 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73493. Document Number: 73493 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000