VISHAY SUM110N10-09-E3

SUM110N10-09
Vishay Siliconix
N-Channel 100-V (D-S) 200_C MOSFET
FEATURES
D
D
D
D
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
100
0.0095 @ VGS = 10 V
110 a
TrenchFETr Power MOSFET
200_C Junction Temperature
New Package with Low Thermal Resistance
100% Rg Tested
APPLICATIONS
D Automotive
− 42-V Power Bus
− DC/DC Conversion
− Motor Drivers
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N10-09
SUM110N10-09-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
"20
TC = 25_C
Continuous Drain Current (TJ = 175_C)
TC = 125_C
Pulsed Drain Current
ID
IDM
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
TC = 25_C
Maximum Power Dissipationb
TA = 25_Cd
Operating Junction and Storage Temperature Range
V
110a
87a
440
IAR
75
EAR
280
PD
Unit
437.5c
3.75
A
mJ
W
TJ, Tstg
−55 to 200
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount
(TO-263)d
RthJA
40
RthJC
0.4
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
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SUM110N10-09
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 250 mA
2
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
rDS(on)
VGS = 10 V, ID = 30 A, TJ = 125_C
4
VDS = 100 V, VGS = 0 V, TJ = 200_C
10
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
gfs
VDS = 15 V, ID = 30 A
nA
mA
mA
A
0.0078
0.0095
0.017
VGS = 10 V, ID = 30 A, TJ = 200_C
Forward Transconductancea
V
W
0.025
25
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
6700
750
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
280
110
160
24
VDS = 50 V,, VGS = 10 V,, ID = 85 A
Qgd
nC
24
Rg
1.5
6.2
td(on)
20
30
tr
125
200
55
85
130
195
td(off)
VDD = 50 V, RL = 0.6 W
ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W
tf
W
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
110
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
1.0
1.5
V
70
140
ns
IF = 50 A, di/dt = 100 A/ms
5.5
10
A
0.19
0.35
mC
trr
IRM(REC)
Qrr
A
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 70677
S-32523—Rev. C, 08-Dec-03
SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
6V
VGS = 10 thru 7 V
200
I D − Drain Current (A)
I D − Drain Current (A)
200
150
100
5V
50
150
100
TC = 125_C
50
25_C
−55_C
4V
0
0
0
2
4
6
8
10
0
VDS − Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
250
0.015
g fs − Transconductance (S)
200
r DS(on) − On-Resistance ( W )
TC = −55_C
25_C
150
125_C
100
50
0
0.012
VGS = 10 V
0.009
0.006
0.003
0.000
0
20
40
60
80
100
120
0
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
Ciss
6000
4000
Crss
100
120
Gate Charge
20
8000
2000
80
ID − Drain Current (A)
Capacitance
10000
60
Coss
0
VDS = 50 V
ID = 85 A
16
12
8
4
0
0
25
50
75
VDS − Drain-to-Source Voltage (V)
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
100
0
50
100
150
200
Qg − Total Gate Charge (nC)
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SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r DS(on) − On-Resistance (W)
(Normalized)
2.5
On-Resistance vs. Junction Temperature
100
Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
I S − Source Current (A)
3.0
2.0
1.5
1.0
TJ = 150_C
10
TJ = 25_C
0.5
0.0
−50 −25
0
25
50
75
1
0
100 125 150 175 200
0.3
TJ − Junction Temperature (_C)
1000
0.6
0.9
1.2
VSD − Source-to-Drain Voltage (V)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
125
120
ID = 10 mA
V(BR)DSS (V)
100
I Dav (a)
IAV (A) @ TA = 25_C
10
IAV (A) @ TA = 150_C
115
110
105
100
1
95
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
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0.1
1
90
−50 −25
0
25
50
75
100 125 150 175 200
TJ − Junction Temperature (_C)
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
SUM110N10-09
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
120
100
10 ms
I D − Drain Current (A)
I D − Drain Current (A)
100
80
60
40
100 ms
10
1
20
0
1 ms
10 ms
100 ms
dc
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
200
0.1
1
10
100
1000
VDS − Drain-to-Source Voltage (V)
TC − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Limited
by rDS(on)
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
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