SUD19N20-90 Datasheet

SUD19N20-90
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
200
RDS(on) ()
ID (A)
0.090 at VGS = 10 V
19
0.105 at VGS = 6 V
17.5
•
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information:
N-Channel MOSFET
SUD19N20-90-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
V
19
ID
11
IDM
40
IS
19
IAS
19
EAS
18
A
mJ
136b
PD
W
3a
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Symbol
t  10 s
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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SUD19N20-90
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
± 100
VDS = 200 V, VGS = 0 V
1
VDS = 200 V, VGS = 0 V, TJ = 125 °C
50
VDS = 200 V, VGS = 0 V, TJ = 175 °C
250
ID(on)
VDS =5 V, VGS = 10 V
40
VGS = 10 V, ID = 5 A
Drain-Source On-State Resistanceb
Forward
Transconductanceb
4
RDS(on)
gfs
V
nA
µA
A
0.075
0.090
VGS = 10 V, ID = 5 A, TJ = 125 °C
0.190
VGS = 10 V, ID = 5 A, TJ = 175 °C
0.260
VGS = 6 V, ID = 5 A
0.082
VDS = 15 V, ID = 19 A
35

0.105
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Timec
td(on)
Turn-Off Delay Timec
td(off)
Turn-On Delay
Rise Timec
1800
VGS = 0 V, VDS = 25 V, F = 1 MHz
pF
80
34
VDS = 100 V, VGS = 10 V, ID = 19 A
tr
Fall Timec
180
51
nC
8
12
0.5
VDD = 100 V, RL = 5.2 
ID  19 A, VGEN = 10 V, Rg = 2.5 
tf
2.9
15
25
50
75
30
45
60
90

ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
ISM
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
50
A
VSD
IF = 19 A, VGS = 0 V
0.9
1.5
V
trr
IF = 19 A, dI/dt = 100 A/µs
180
250
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 7 V
6V
30
I D - Drain Current (A)
I D - Drain Current (A)
30
20
5V
10
20
TC = 125 °C
10
25 °C
- 55 °C
4V
0
0
0
2
4
6
8
0
10
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
70
6
0.20
R DS(on) - On-Resistance ()
TC = - 55 °C
60
g fs - Transconductance (S)
1
50
25 °C
40
125 °C
30
20
0.15
VGS = 6 V
0.10
VGS = 10 V
0.05
10
0.00
0
0
10
20
30
0
40
20
30
40
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2500
VGS - Gate-to-Source Voltage (V)
20
2000
C - Capacitance (pF)
10
Ciss
1500
1000
500
Crss
VDS = 100 V
ID = 19 A
16
12
8
4
Coss
0
0
0
40
80
120
160
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
200
0
10
20
30
40
50
60
Qg - Total Gate Charge (nC)
Gate Charge
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SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
100
VGS = 10 V
ID = 5 A
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
2.5
2.0
1.5
1.0
TJ = 150 °C
10
TJ = 25 °C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
175
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature ( °C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
100
25
100 µs
ID - Drain Current (A)
I D - Drain Current (A)
10 µs
Limited by R DS(on)*
20
15
10
10
1 ms
10 ms
1
100 ms
1 s, DC
TC = 25 °C
Single Pulse
5
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
1
10
1000
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767.
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Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000