SUD25N15-52 Datasheet

SUD25N15-52
Vishay Siliconix
N-Channel 150-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150
ID (A)
0.052 at VGS = 10 V
25
0.060 at VGS = 6 V
23
•
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-252
• Primary Side Switch
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)- free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
14.5
50
Continuous Source Current (Diode Conduction)
IS
25
Avalanche Current
IAR
25
EAR
31
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
Maximum Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
A
mJ
136b
PD
W
3a
TJ, Tstg
Operating Junction and Storage Temperature Range
V
25
ID
IDM
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
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SUD25N15-52
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = 250 µA
150
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 150 V, VGS = 0 V
1
VDS = 150 V, VGS = 0 V, TJ = 125 °C
50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
4
VDS = 150 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
Forward
Transconductanceb
RDS(on)
µA
A
0.042
0.052
VGS = 10 V, ID = 5 A, TJ = 125 °C
0.109
VGS = 10 V, ID = 5 A, TJ = 175 °C
0.145
gfs
nA
250
50
VGS = 10 V, ID = 5 A
Drain-Source On-State Resistanceb
V
VGS = 6 V, ID = 5 A
0.047
VDS = 15 V, ID = 25 A
40
Ω
0.060
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
c
td(on)
Turn-Off Delay Timec
td(off)
Turn-On Delay Time
Rise Timec
Fall Timec
tr
1725
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
216
100
33
VDS = 75 V, VGS = 10 V, ID = 25 A
40
nC
9
12
1
VDD = 50 V, RL = 3 Ω
ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω
tf
3
15
25
70
100
25
40
60
90
Ω
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °C
Pulsed Current
ISM
50
A
Diode Forward Voltageb
VSD
IF = 25 A, VGS = 0 V
0.9
1.5
V
trr
IF = 25 A, dI/dt = 100 A/µs
95
140
ns
Source-Drain Reverse Recovery Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 7 V
6V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
5V
10
30
20
TC = 125 °C
25 °C
10
- 55 °C
4V
0
0
0
2
4
6
8
0
10
1
2
Output Characteristics
5
6
7
0.10
TC = - 55 °C
40
125 °C
30
20
R DS(on) - On-Resistance (Ω)
25 °C
50
g fs - Transconductance (S)
4
Transfer Characteristics
60
10
0
0.08
0.06
VGS = 6 V
VGS = 10 V
0.04
0.02
0.00
0
10
20
30
40
50
0
10
20
I D - Drain Current (A)
30
40
50
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2500
VGS - Gate-to-Source Voltage (V)
20
2000
C - Capacitance (pF)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ciss
1500
1000
500
Crss
VDS = 75 V
ID = 25 A
16
12
8
4
Coss
0
0
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
150
0
10
20
30
40
50
60
Qg - Total Gate Charge (nC)
Gate Charge
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SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
3.0
VGS = 10 V
ID = 5 A
I S - Source Current (A)
RDS(on) - On-Resistance
(Normalized)
2.5
2.0
1.5
1.0
TJ = 150 °C
10
TJ = 25 °C
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
0.3
0
175
0.6
0.9
1.2
TJ - Junction Temperature ( °C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
30
100
10 µs
Limited by R DS(on)*
25
I D - Drain Current (A)
I D - Drain Current (A)
100 µs
20
15
10
10
1 ms
10 ms
1
TC = 25 °C
Single Pulse
5
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
100 ms
1 s, DC
1
10
1000
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71768.
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Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000