SUD19N20-90 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 200 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized ID (A) 0.090 @ VGS = 10 V 19 0.105 @ VGS = 6 V 17.5 APPLICATIONS D Primary Side Switch D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD19N20-90 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TA = 25_C Operating Junction and Storage Temperature Range V 19 ID 11 IDM 40 IS 19 IAR 19 EAR 18 A mJ 100b TC = 25_C Maximum Power Dissipation Unit PD W 3a TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambienta Junction-to-Case (Drain) Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.3 1.6 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71767 S-05233—Rev. A, 17-Dec-01 www.vishay.com 1 SUD19N20-90 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 200 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 160 V, VGS = 0 V 1 VDS = 160 V, VGS = 0 V, TJ = 125_C 50 VDS = 160 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 40 nA mA m A 0.075 0.090 VGS = 10 V, ID = 5 A, TJ = 125_C 0.190 VGS = 10 V, ID = 5 A, TJ = 175_C 0.260 VGS = 6 V, ID = 5 A 0.082 VDS = 15 V, ID = 19 A 35 W 0.105 S Dynamica Input Capacitance Ciss 1800 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Chargec Qg 34 Gate-Source Chargec Qgs VDS = 100 V, VGS = 10 V, ID = 19 A 180 pF 42 8 nC Gate-Drain Chargec Qgd 12 Turn-On Delay Timec td(on) 15 25 50 75 30 45 60 90 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = 100 V, RL = 5.2 W ID ^ 19 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 50 A Voltageb VSD IF = 19 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 19 A, di/dt = 100 A/ms 180 250 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71767 S-05233—Rev. A, 17-Dec-01 SUD19N20-90 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 6V VGS = 10 thru 7 V 30 I D – Drain Current (A) I D – Drain Current (A) 30 20 5V 10 20 TC = 125_C 10 25_C 4V –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 6 On-Resistance vs. Drain Current 0.20 r DS(on)– On-Resistance ( W ) TC = –55_C 60 50 25_C 40 125_C 30 20 10 0 0.15 VGS = 6 V 0.10 VGS = 10 V 0.05 0.00 0 10 20 30 0 40 10 ID – Drain Current (A) 20 30 40 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 2500 2000 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 70 g fs – Transconductance (S) 1 Ciss 1500 1000 500 Crss Coss 0 VDS = 100 V ID = 19 A 16 12 8 4 0 0 40 80 120 160 VDS – Drain-to-Source Voltage (V) Document Number: 71767 S-05233—Rev. A, 17-Dec-01 200 0 10 20 30 40 50 60 Qg – Total Gate Charge (nC) www.vishay.com 3 SUD19N20-90 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3.0 100 VGS = 10 V ID = 5 A I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) 2.5 2.0 1.5 1.0 TJ = 150_C 10 TJ = 25_C 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 25 100 I D – Drain Current (A) I D – Drain Current (A) 10 ms Limited by rDS(on) 20 15 10 100 ms 10 1 ms 1 10 ms 100 ms 1 s, dc TC = 25_C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71767 S-05233—Rev. A, 17-Dec-01