SUM40N15-38 Datasheet

SUM40N15-38
Vishay Siliconix
N-Channel 150-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
150
RDS(on) (Ω)
•
•
•
•
•
ID (A)
0.038 at VGS = 10 V
40
0.042 at VGS = 6 V
38
TrenchFET® Power MOSFETs
175 °C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
ID
Unit
V
40
23
IDM
80
IAR
40
EAR
80
A
mJ
b
PD
166
3.75
W
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount TO-263c)
RthJA
40
Junction-to-Case (Drain)
RthJC
0.9
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
www.vishay.com
1
SUM40N15-38
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
150
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 120 V, VGS = 0 V
1
VDS = 120 V, VGS = 0 V, TJ = 125 °C
50
VDS = 120 V, VGS = 0 V, TJ = 175 °C
250
ID(on)
Drain-Source On-State Resistancea
4
RDS(on)
VDS ≥ 5 V, VGS = 10 V
80
Forward Transconductance
gfs
0.030
0.038
VGS = 6 V, ID = 10 A
0.033
0.042
VGS = 10 V, ID = 15 A, TJ = 125 °C
VDS = 15 V, ID = 15 A
nA
µA
A
VGS = 10 V, ID = 15 A
0.076
VGS = 10 V, ID = 15 A, TJ = 175 °C
a
V
Ω
0.100
10
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
190
Rg
2
Gate Resistance
Total Gate Charge
c
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
c
tr
Turn-Off Delay Timec
td(off)
Rise Time
Fall Timec
2500
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ω
38
VDS = 75 V, VGS = 10 V, ID = 40 A
pF
290
60
nC
13
13
VDD = 75 V, RL = 1.80 Ω
ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω
tf
15
25
130
200
30
45
90
140
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
40
Pulsed Current
ISM
80
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 40 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 40 A, dI/dt = 100 A/µs
A
1.0
1.5
V
100
150
ns
5
8
A
0.25
0.6
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
SUM40N15-38
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
80
6V
60
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 V thru 7 V
40
20
60
40
TC = 125 °C
20
5V
25 °C
0
- 55 °C
0
0
2
4
6
8
10
0
VDS - Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
80
0.08
60
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
25 °C
125 °C
40
20
0
VGS = 6 V
VGS = 10 V
0.04
0.02
0.00
0
10
20
30
40
0
20
40
60
80
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
VGS - Gate-to-Source Voltage (V)
4000
3200
C - Capacitance (pF)
0.06
Ciss
2400
1600
800
VDS = 75 V
ID = 40 A
16
12
8
4
Coss
Crss
0
0
0
25
50
75
100
125
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
150
0
15
30
45
60
75
Qg - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3
SUM40N15-38
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.7
VGS = 10 V
ID = 15 A
2.1
I S - Source Current (A)
R DS(on) - On-Resistance
(Normalized)
2.4
1.8
1.5
1.2
0.9
TJ = 25 °C
TJ = 150 °C
10
0.6
0.3
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
0.6
0.9
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.2
195
ID = 1 mA
V DS (V)
185
175
165
155
145
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
SUM40N15-38
Vishay Siliconix
THERMAL RATINGS
1000
45
100
I D - Drain Current (A)
I D - Drain Current (A)
36
27
18
10 µs
100 µs
10
1 ms
1
9
0
0
25
50
75
100
125
150
175
Limited
by RDS(on)*
0.1
0.1
10 ms
100 ms, DC
TC = 25 °C
Single Pulse
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TC - Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72155.
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
www.vishay.com
5
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000