SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) • • • • • ID (A) 0.038 at VGS = 10 V 40 0.042 at VGS = 6 V 38 TrenchFET® Power MOSFETs 175 °C Junction Temperature New Low Thermal Resistance Package PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V 40 23 IDM 80 IAR 40 EAR 80 A mJ b PD 166 3.75 W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount TO-263c) RthJA 40 Junction-to-Case (Drain) RthJC 0.9 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 72155 S09-1340-Rev. B, 13-Jul-09 www.vishay.com 1 SUM40N15-38 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 125 °C 50 VDS = 120 V, VGS = 0 V, TJ = 175 °C 250 ID(on) Drain-Source On-State Resistancea 4 RDS(on) VDS ≥ 5 V, VGS = 10 V 80 Forward Transconductance gfs 0.030 0.038 VGS = 6 V, ID = 10 A 0.033 0.042 VGS = 10 V, ID = 15 A, TJ = 125 °C VDS = 15 V, ID = 15 A nA µA A VGS = 10 V, ID = 15 A 0.076 VGS = 10 V, ID = 15 A, TJ = 175 °C a V Ω 0.100 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 190 Rg 2 Gate Resistance Total Gate Charge c Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 2500 VGS = 0 V, VDS = 25 V, f = 1 MHz Ω 38 VDS = 75 V, VGS = 10 V, ID = 40 A pF 290 60 nC 13 13 VDD = 75 V, RL = 1.80 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω tf 15 25 130 200 30 45 90 140 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 40 Pulsed Current ISM 80 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 40 A, VGS = 0 V trr IRM(REC) Qrr IF = 40 A, dI/dt = 100 A/µs A 1.0 1.5 V 100 150 ns 5 8 A 0.25 0.6 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72155 S09-1340-Rev. B, 13-Jul-09 SUM40N15-38 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 80 6V 60 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 7 V 40 20 60 40 TC = 125 °C 20 5V 25 °C 0 - 55 °C 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.08 60 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 4000 3200 C - Capacitance (pF) 0.06 Ciss 2400 1600 800 VDS = 75 V ID = 40 A 16 12 8 4 Coss Crss 0 0 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72155 S09-1340-Rev. B, 13-Jul-09 150 0 15 30 45 60 75 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM40N15-38 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.7 VGS = 10 V ID = 15 A 2.1 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.4 1.8 1.5 1.2 0.9 TJ = 25 °C TJ = 150 °C 10 0.6 0.3 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 0.6 0.9 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.2 195 ID = 1 mA V DS (V) 185 175 165 155 145 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72155 S09-1340-Rev. B, 13-Jul-09 SUM40N15-38 Vishay Siliconix THERMAL RATINGS 1000 45 100 I D - Drain Current (A) I D - Drain Current (A) 36 27 18 10 µs 100 µs 10 1 ms 1 9 0 0 25 50 75 100 125 150 175 Limited by RDS(on)* 0.1 0.1 10 ms 100 ms, DC TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72155. Document Number: 72155 S09-1340-Rev. B, 13-Jul-09 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000