SUM55P06-19L Datasheet

SUM55P06-19L
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) ()
ID
(A)d
0.019 at VGS = - 10 V
- 55
0.025 at VGS = - 4.5 V
- 48
Qg (Typ.)
76
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S
TO-263
G
G
D
D
S
Top View
P-Channel MOSFET
Ordering Information: SUM55P06-19L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currentd (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energya
TC = 25 °C
Power Dissipation
TA = 25 °Cb
Operating Junction and Storage Temperature Range
ID
V
- 55
- 31
IDM
- 150
IAS
- 45
EAS
101
PD
Unit
125c
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
1.2
THERMAL RESISTANCE RATINGS
Parameter
PCB Mountb
Junction-to-Ambient
Junction-to-Case
°C/W
Notes:
a. Duty cycle  1%.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM55P06-19L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
± 100
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 175 °C
- 250
ID(on)
VDS =- 5 V, VGS = - 10 V
- 120
VGS = - 10 V, ID = - 30 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
0.033
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
0.041
VDS = - 15 V, ID = - 50 A
nA
µA
0.019
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
gfs
V
A
0.015
VGS = - 4.5 V, ID = - 20 A
a
-3
0.020

0.025
20
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Gate-Source Charge
c
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
c
tr
Turn-Off Delay Timec
td(off)
Rise Time
Fall Timec
76
115
VDS = - 30 V, VGS = - 10 V, ID = - 55 A
16
f = 1 MHz
5.2
12
20
VDD = - 30 V, RL = 0.54 
ID  - 55 A, VGEN = - 10 V, Rg = 2.5 
15
25
80
120
230
350
nC
19
td(on)
c
pF
390
290
Qg
c
Turn-On Delay Time
3500
VGS = 0 V, VDS = - 25 V, f = 1 MHz
tf
Source-Drain Diode Ratings and Characteristics TC = 25

°Cb
IS
- 110
Pulsed Current
ISM
- 240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 50 A, VGS = 0 V
trr
IRM(REC)
ns
IF = - 50 A, di/dt = 100 A/µs
Qrr
A
-1
- 1.5
V
45
68
ns
- 2.6
-4
A
0.059
0.136
µC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM55P06-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
200
TC = - 55 °C
VGS = 10 thru 6 V
160
I D - Drain Current (A)
I D - Drain Current (A)
25 °C
160
5V
120
4V
80
40
125 °C
120
80
40
2V
3V
0
0
0
3
6
9
12
15
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
100
0.05
80
r DS(on) - On-Resistance ()
g fs - Transconductance (S)
TC = - 55 °C
25 °C
60
125 °C
40
20
0.04
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0.00
0
0
6
12
18
24
30
36
42
48
54
0
60
20
40
ID - Drain Current (A)
60
80
100
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
5000
20
VGS - Gate-to-Source Voltage (V)
4500
4000
C - Capacitance (pF)
Ciss
3500
3000
2500
2000
1500
Coss
1000
Crss
VDS = 30 V
ID = 55 A
16
12
8
4
500
0
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
50
60
0
20
40
80
100
120
140
160
Qg - Total Gate Charge (nC)
Capacitance
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
60
For technical questions, contact: [email protected]
Gate Charge
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM55P06-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V
ID = 30 A
1.9
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.2
1.6
1.3
1.0
TJ = 150 °C
TJ = 25 °C
10
0.7
0.4
- 50
- 25
0
25
50
75
100
125
150
1
0.0
175
0.3
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
75
ID = 10 mA
72
V(BR)DSS (V)
I Dav (A)
100
10
IAV (A) at TA = 25 °C
69
66
1
63
IAV (A) at TA = 150 °C
0.1
0.0001
0.001
0.01
0.1
tin (s)
60
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
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1
Drain Source Breakdown vs.Junction Temperature
For technical questions, contact: [email protected]
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM55P06-19L
Vishay Siliconix
THERMAL RATINGS
1000
60
Limited by r DS(on)*
10 µs
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
100
100 µs
10
1
10
1 ms
10 ms
100 ms, DC
TC = 25 °C
Single Pulse
0.1
0
0
25
50
75
100
125
150
0.1
175
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which rDS(on) is specified
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73059.
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000