SUM55P06-19L Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 Qg (Typ.) 76 • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S TO-263 G G D D S Top View P-Channel MOSFET Ordering Information: SUM55P06-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current L = 0.1 mH Single Pulse Avalanche Energya TC = 25 °C Power Dissipation TA = 25 °Cb Operating Junction and Storage Temperature Range ID V - 55 - 31 IDM - 150 IAS - 45 EAS 101 PD Unit 125c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.2 THERMAL RESISTANCE RATINGS Parameter PCB Mountb Junction-to-Ambient Junction-to-Case °C/W Notes: a. Duty cycle 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 73059 S12-3070-Rev. D, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM55P06-19L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS =- 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance 0.033 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.041 VDS = - 15 V, ID = - 50 A nA µA 0.019 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.015 VGS = - 4.5 V, ID = - 20 A a -3 0.020 0.025 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Qgs Gate-Drain Charge Qgd Gate Resistance Rg c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 76 115 VDS = - 30 V, VGS = - 10 V, ID = - 55 A 16 f = 1 MHz 5.2 12 20 VDD = - 30 V, RL = 0.54 ID - 55 A, VGEN = - 10 V, Rg = 2.5 15 25 80 120 230 350 nC 19 td(on) c pF 390 290 Qg c Turn-On Delay Time 3500 VGS = 0 V, VDS = - 25 V, f = 1 MHz tf Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS - 110 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 50 A, VGS = 0 V trr IRM(REC) ns IF = - 50 A, di/dt = 100 A/µs Qrr A -1 - 1.5 V 45 68 ns - 2.6 -4 A 0.059 0.136 µC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 73059 S12-3070-Rev. D, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 TC = - 55 °C VGS = 10 thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 25 °C 160 5V 120 4V 80 40 125 °C 120 80 40 2V 3V 0 0 0 3 6 9 12 15 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.05 80 r DS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 25 °C 60 125 °C 40 20 0.04 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0.00 0 0 6 12 18 24 30 36 42 48 54 0 60 20 40 ID - Drain Current (A) 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 20 VGS - Gate-to-Source Voltage (V) 4500 4000 C - Capacitance (pF) Ciss 3500 3000 2500 2000 1500 Coss 1000 Crss VDS = 30 V ID = 55 A 16 12 8 4 500 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 60 0 20 40 80 100 120 140 160 Qg - Total Gate Charge (nC) Capacitance Document Number: 73059 S12-3070-Rev. D, 24-Dec-12 60 For technical questions, contact: [email protected] Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 30 A 1.9 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.2 1.6 1.3 1.0 TJ = 150 °C TJ = 25 °C 10 0.7 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 75 ID = 10 mA 72 V(BR)DSS (V) I Dav (A) 100 10 IAV (A) at TA = 25 °C 69 66 1 63 IAV (A) at TA = 150 °C 0.1 0.0001 0.001 0.01 0.1 tin (s) 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Avalanche Current vs. Time www.vishay.com 4 1 Drain Source Breakdown vs.Junction Temperature For technical questions, contact: [email protected] Document Number: 73059 S12-3070-Rev. D, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM55P06-19L Vishay Siliconix THERMAL RATINGS 1000 60 Limited by r DS(on)* 10 µs I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 100 100 µs 10 1 10 1 ms 10 ms 100 ms, DC TC = 25 °C Single Pulse 0.1 0 0 25 50 75 100 125 150 0.1 175 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73059. Document Number: 73059 S12-3070-Rev. D, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000