SUM40N15-38 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.038 @ VGS = 10 V 40 0.042 @ VGS = 6 V 38 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized APPLICATIONS D Primary Side Switch D TO-263 G G D S Top View Ordering Information: SUM40N15-38 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range Symbol Limit VDS 150 VGS "20 ID V 40 23 IDM 80 IAR 40 EAR Unit 80 A mJ 166b PD 3.75 W TJ, Tstg - 55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount TO-263c) Junction-to-Case (Drain) RthJA 40 RthJC 0.9 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72155 S-03534—Rev. A, 24-Mar-03 www.vishay.com 1 SUM40N15-38 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 120 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C 50 VDS = 120 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V ID(on) rDS(on) DS( ) V 4 80 VGS = 10 V, ID = 15 A 0.030 0.038 VGS = 6 V, ID = 10 A 0.033 0.042 VGS = 10 V, ID = 15 A, TJ = 125_C gfs VDS = 15 V, ID = 15 A mA m A 0.076 VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea nA W 0.100 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2500 VGS = 0 V, VDS = 25 V, f = 1 MHz 290 pF 190 W Gate Resistance Rg 2 Total Gate Chargec Qg 38 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 13 Turn-On Delay Timec td(on) 15 25 130 200 30 45 90 140 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = 75 V,, VGS = 10 V,, ID = 40 A VDD = 75 V, RL = 1.80 W ID ^ 40 A, VGEN = 10 V, RG = 2.5 W tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current 60 13 nC 25_C)b IS 40 Pulsed Current ISM 80 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 40 A, VGS = 0 V trr IRM(REC) Qrr ns IF = 40 A,, di/dt = 100 A/ms m A 1.0 1.5 V 100 150 ns 5 8 A 0.25 0.6 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72155 S-03534—Rev. A, 24-Mar-03 SUM40N15-38 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 80 80 6V 60 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 7 V 40 20 60 40 TC = 125_C 20 5V 25_C - 55_C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.08 TC = - 55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 25_C 60 125_C 40 20 0 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 0 20 ID - Drain Current (A) 60 80 ID - Drain Current (A) Capacitance Gate Charge 20 V GS - Gate-to-Source Voltage (V) 4000 3200 C - Capacitance (pF) 40 Ciss 2400 1600 800 Crss Coss 0 VDS = 75 V ID = 40 A 16 12 8 4 0 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Document Number: 72155 S-03534—Rev. A, 24-Mar-03 150 0 15 30 45 60 75 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM40N15-38 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.7 VGS = 10 V ID = 15 A 2.1 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 2.4 100 1.8 1.5 1.2 0.9 TJ = 150_C TJ = 25_C 10 0.6 0.3 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 195 V(BR)DSS (V) 185 ID = 1 mA 175 165 155 145 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72155 S-03534—Rev. A, 24-Mar-03 SUM40N15-38 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 45 Limited by rDS(on) 36 I D - Drain Current (A) I D - Drain Current (A) 100 27 18 10 ms 100 ms 10 1 ms 10 ms 1 9 0 TC = 25_C Single Pulse dc, 100 ms 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72155 S-03534—Rev. A, 24-Mar-03 www.vishay.com 5