SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC S TO-263 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 125 °C TA = 25 °C TA = 125 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 125 °C TA = 25 °C TA = 125 °C PD Continuous Source-Drain Diode Current Limit - 100 ± 20 - 90 - 52 TJ, Tstg Operating Junction and Storage Temperature Range Unit V - 17.2b, c - 9.9b, c - 90 - 250 A - 9b, c - 70 245 375 125 mJ 13.6b, c 4.5b, c - 55 to 175 W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, d Maximum Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 t ≤ 10 s Steady State Symbol RthJA RthJC Typical 8 0.33 Maximum 11 0.4 Unit °C/W www.vishay.com 1 SUM90P10-19L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 125 mV/°C 5.9 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 175 °C - 500 VDS ≥ 10 V, VGS = - 10 V RDS(on) gfs - 90 µA A VGS = - 10 V, ID = - 20 A 0.0156 0.019 VGS = - 4.5 V, ID = - 15 A 0.0173 0.021 VDS = - 15 V, ID = - 20 A 80 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 11100 VDS = - 50 V, VGS = 0 V, f = 1 MHz td(off) pF VDS = - 50 V, VGS = - 10 V, ID = - 90 A 217 326 97 146 VDS = - 50 V, VGS = - 4.5 V, ID = - 90 A 42 f = 1 MHz 3.5 20 30 VDD = - 50 V, RL = 0.56 Ω ID ≅ - 90 A, VGEN = - 10 V, Rg = 1 Ω 510 855 145 220 870 1300 nC 51 td(on) tr 700 1690 tf Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C - 90 A - 250 IS = - 20 A - 0.8 - 1.5 V 80 120 ns 220 330 nC Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta 56 Reverse Recovery Rise Time tb 24 IF = - 20 A, dI/dt = 100 A/µs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 180 40 VGS = 10 V thru 4 V 30 ID - Drain Current (A) ID - Drain-Current (A) 150 120 90 60 20 25 °C 10 30 3V TC = 125 °C 0 0 1 2 3 0 0.0 4 - 55 °C 1.0 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 Ciss 12 000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4.0 15 000 VGS = 4.5 V 0.020 VGS = 10 V 0.010 9000 6000 Crss 3000 0.000 Coss 0 0 20 40 60 80 100 120 0 20 ID - Drain Current (A) 40 80 100 Capacitance 10.0 2.5 VGS = 10 V I D = - 90 A 8.0 ID = 20 A R DS(on) - On-Resistance (Normalized) 2.1 VDS = 50 V 6.0 VDS = 80 V 4.0 2.0 0.0 0.0 60 VDS - Drain-to-Source (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3.0 40.0 80.0 120.0 160.0 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 200.0 240.0 1.7 1.3 0.9 0.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 TJ = 150 °C RDS(on) - Drain-to-Source On-Resistance (Ω) IS - Source Current (A) 100 25 °C 10 0.08 0.06 0.04 125 °C 0.02 25 °C 0.00 1 0.0 0.3 0.6 0.9 1.2 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 6000 0.7 5000 0.5 4000 Power (W) VGS(th) Variance (V) ID = 10 mA 0.3 3000 0.1 2000 - 0.1 1000 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 175 TJ - Temperature (°C) 0.001 0.01 0.10 1 Time (s) Single Pulse, Junction-to-Case (TC = 25 °C) Threshold Voltage 400 1000 350 100 ID - Drain Current (A) Power Dissipation (W) 300 250 200 150 100 Limited by R DS(on) * 10 µs 100 µs 10 1 ms 10 ms DC 1 Single pulse Tc = 25 °C 50 0 25 50 75 100 125 150 TC - Case-Temperature (°C) Power Derating (Junction-to-Case) www.vishay.com 4 175 0.1 0.1 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 IDav - Peak Avalanche Curent (A) 1000 ID - Drain Current (A) 90 60 30 100 10 1 0.1 0 0 25 50 75 100 125 150 175 0.00001 TC - Case Temperature (°C) 0.001 0.01 0.1 1.0 tin - Time in Avalanche (s) Max Avalanche and Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance 0.0001 Avalanche Current vs. Time 1 0.5 0.2 0.1 0.05 0.1 0.02 Single 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73474. Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000