IRF9630S, SiHF9630S Datasheet

IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
-200
RDS(on) ()
VGS = -10 V
0.80
Qg max. (nC)
29
Qgs (nC)
5.4
Qgd (nC)
15
Configuration
Single
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
S
D2PAK
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Fast switching
Available
Ease of paralleling
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
(TO-263)
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
G D
D
S
P-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF9630S-GE3
SiHF9630STRL-GE3 a
IRF9630SPbF
IRF9630STRLPbF a
SiHF9630S-E3
SiHF9630STL-E3 a
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
LIMIT
-200
Gate-Source Voltage
VGS
± 20
VGS at -10 V
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
UNIT
V
-6.5
-4.0
A
-26
Linear Derating Factor
0.59
Linear Derating Factor (PCB mount) e
0.025
W/°C
Single Pulse Avalanche Energy b
EAS
500
mJ
Avalanche Current a
IAR
-6.4
A
EAR
7.4
mJ
Repetitive Avalanche Energy
a
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB mount) e
TA = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
PD
74
3.0
dV/dt
-5.0
TJ, Tstg
-55 to +150
300
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).
c. ISD  -6.5 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0754-Rev. D, 02-May-16
Document Number: 91085
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Ambient 
(PCB mount) a
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0, ID = -250 μA
-200
-
-
V
VDS/TJ
Reference to 25 °C, ID = -1 mA
-
-0.24
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VDS = -200 V, VGS = 0 V
-
-
- 100
VDS = -160 V, VGS = 0 V, TJ = 125 °C
-
-
-500
μA
-
-
0.80

gfs
VDS = -50 V, ID = -3.9 A b
2.8
-
-
S
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
700
-
-
200
-
-
40
-
-
-
29
-
-
5.4
RDS(on)
ID = -3.9 A b
VGS = -10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
pF
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
15
Turn-On Delay Time
td(on)
-
12
-
tr
-
27
-
-
28
-
-
24
-
-
4.5
-
-
7.5
-
0.6
-
3.7
-
-
-6.5
-
-
-26
-
-
-6.5
V
-
200
300
ns
-
1.9
2.9
μC
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = -10 V
ID = -6.5 A, VDS = -160 V,
see fig. 6 and 13 b
VDD = -100 V, ID = -6.5 A,
Rg = 12 , RD = 15 , see fig. 10 b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
Between lead,
6 mm (0.25") from
package and center of
die contact
nC
ns
D
nH
G
S
f = 1 MHz, open drain

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = -6.5 A, VGS = 0 V b
TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0754-Rev. D, 02-May-16
Document Number: 91085
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
Top
101
- 4.5 V
100
20 µs Pulse Width
TC = 25 °C
10-1
10-1
100
101
- VDS, Drain-to-Source Voltage (V)
91085_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = - 6.5 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
91085_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
1200
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Top
100
1000
- 4.5 V
Capacitance (pF)
- ID, Drain Current (A)
101
800
Ciss
600
400
Coss
200
20 µs Pulse Width
TC = 150 °C
10-1
10-1
100
101
100
- VDS, Drain-to-Source Voltage (V)
91085_02
Crss
0
- VDS, Drain-to-Source Voltage (V)
91085_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
150 °C
25 °C
100
20 µs Pulse Width
VDS = - 50 V
4
91085_03
5
6
7
8
9
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0754-Rev. D, 02-May-16
- VGS, Gate-to-Source Voltage (V)
- ID, Drain Current (A)
20
101
101
ID = - 6.5 A
VDS = - 160 V
16
VDS = - 100 V
VDS = - 40 V
12
8
4
For test circuit
see figure 13
0
10
0
91085_06
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91085
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
6.0
101
150 °C
- ID, Drain Current (A)
- ISD, Reverse Drain Current (A)
7.0
25 °C
100
5.0
4.0
3.0
2.0
1.0
VGS = 0 V
10-1
0.5
0.0
1.5
2.5
4.5
3.5
25
- VSD, Source-to-Drain Voltage (V)
91085_07
50
125
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
103
VDS
Operation in this area limited
by RDS(on)
5
VGS
2
- ID, Drain Current (A)
100
TC, Case Temperature (°C)
91085_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
75
D.U.T.
Rg
102
+VDD
5
10 µs
2
10
- 10 V
100 µs
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5
1 ms
2
1
Fig. 10a - Switching Time Test Circuit
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
5
2
0.1
0.1
2
5
1
2
5
10
2
td(on)
5
102
2
5
td(off) tf
tr
VGS
103
10 %
- VDS, Drain-to-Source Voltage (V)
91085_08
Fig. 8 - Maximum Safe Operating Area
90 %
VDS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
91085_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. D, 02-May-16
Document Number: 91085
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
QG
- 10 V
Rg
D.U.T.
QGS
+ V DD
IAS
QGD
VG
- 10 V
0.01 Ω
tp
Charge
Fig. 13a - Basic Gate Charge Waveform
Fig. 12a - Unclamped Inductive Test Circuit
Current regulator
Same type as D.U.T.
IAS
50 kΩ
12 V
VDS
0.2 µF
0.3 µF
-
VDD
D.U.T.
tp
+ VDS
VGS
VDS
- 3 mA
IG
ID
Current sampling resistors
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13b - Gate Charge Test Circuit
EAS, Single Pulse Energy (mJ)
1200
ID
- 2.9 A
- 4.1 A
Bottom - 6.5 A
Top
1000
800
600
400
200
0
VDD = - 50 V
25
91085_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S16-0754-Rev. D, 02-May-16
Document Number: 91085
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9630S, SiHF9630S
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel





Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91085.
S16-0754-Rev. D, 02-May-16
Document Number: 91085
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000