IRF820S, SiHF820S, IRF820L, SiHF820L Datasheet

IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
500
RDS(on) ()
VGS = 10 V
3.0
Qg (Max.) (nC)
24
Qgs (nC)
3.3
Qgd (nC)
13
Configuration
Single
D
D2PAK (TO-263)
I2PAK (TO-262)
G
G
D
S
Surface mount
Available in tape and reel
Available
Dynamic dV/dt rating
Repetitive avalanche rated
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
D
DESCRIPTION
S
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free and halogen-free
SiHF820S-GE3
SiHF820STRL-GE3 a
SiHF820STRR-GE3 a
SiHF820L-GE3
Lead (Pb)-free
IRF820SPbF
IRF820STRLPbF a
IRF820STRRPbF a
IRF820LPbF
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
1.6
0.40
0.025
Avalanche Current
Repetitive Avalanche Energy a
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB mount) e
TA = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
A
8.0
Linear Derating Factor
a
V
2.5
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
UNIT
W/°C
EAS
210
IAR
2.5
A
EAR
5.0
mJ
PD
50
3.1
dV/dt
3.5
TJ, Tstg
-55 to +150
300
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
c. ISD  2.5 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
Document Number: 91060
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
PARAMETER
RthJA
-
62
Maximum Junction-to-Ambient 
(PCB mount) a
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
2.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.59
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
μA
-
-
3.0

gfs
VDS = 50 V, ID = 1.5 Ab
1.5
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
360
-
-
92
-
-
37
-
-
-
24
-
-
3.3
RDS(on)
ID = 1.5 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
13
Turn-On Delay Time
td(on)
-
8.0
-
tr
-
8.6
-
-
33
-
-
16
-
-
4.5
-
-
7.5
-
-
-
2.5
-
-
8.0
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 10 V
ID = 2.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 2.1 A,
Rg = 18 , RD = 100 , see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 2.5 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μsb
-
-
1.6
V
-
260
520
ns
-
0.70
1.4
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S15-1659-Rev. D, 20-Jul-15
Document Number: 91060
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
ID, Drain Current (A)
Top
100
4.5 V
20 µs Pulse Width
TC = 25 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
91060_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = 2.1 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
91060_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
800
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
100
4.5 V
Capacitance (pF)
ID, Drain Current (A)
Top
600
Ciss
400
Coss
200
20 µs Pulse Width
TC = 150 °C
10-1
100
VDS, Drain-to-Source Voltage (V)
91060_02
Crss
0
100
101
VDS, Drain-to-Source Voltage (V)
91060_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25 °C
100
10-1
20 µs Pulse Width
VDS = 50 V
VGS, Gate-to-Source Voltage (V)
ID, Drain Current (A)
20
150 °C
101
ID = 2.1 A
VDS = 400 V
16
VDS = 250 V
VDS = 100 V
12
8
4
For test circuit
see figure 13
0
4
91060_03
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-1659-Rev. D, 20-Jul-15
10
0
91060_06
4
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91060
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
100
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
2.5
150 °C
25 °C
2.0
1.5
1.0
0.5
VGS = 0 V
0.4
0.6
0.8
0.0
1.2
1.0
25
VSD, Source-to-Drain Voltage (V)
91060_07
ID, Drain Current (A)
125
VGS
10 µs
D.U.T.
Rg
5
+
- VDD
100 µs
2
1
10 V
1 ms
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5
10 ms
2
150
RD
VDS
2
10
100
Fig. 9 - Maximum Drain Current vs. Case Temperature
Operation in this area limited
by RDS(on)
5
75
TC, Case Temperature (°C)
91060_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
102
50
0.1
Fig. 10a - Switching Time Test Circuit
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
10-2
0.1
2
5
2
1
5
10
2
5
102
VDS
2
5
2
103
5
90 %
104
VDS, Drain-to-Source Voltage (V)
91060_08
Fig. 8 - Maximum Safe Operating Area
10 %
VGS
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.5
0.2
PDM
0.1
0.05
0.1
0.02
0.01
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91060_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1659-Rev. D, 20-Jul-15
Document Number: 91060
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
Rg
+
-
I AS
V DD
VDS
10 V
0.01 W
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
500
ID
1.1 A
1.6 A
Bottom 2.5 A
Top
400
300
200
100
0
VDD = 50 V
25
91060_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S15-1659-Rev. D, 20-Jul-15
Fig. 13b - Gate Charge Test Circuit
Document Number: 91060
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
•
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91060.
S15-1659-Rev. D, 20-Jul-15
Document Number: 91060
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000