SiHG14N50D Datasheet

SiHG14N50D
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
550
RDS(on) max. at 25 °C ()
VGS = 10 V
0.4
Qg (Max.) (nC)
58
Qgs (nC)
8
Qgd (nC)
14
Configuration
Single
D
TO-247AC
G
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
S
D
S
G
APPLICATIONS
N-Channel MOSFET
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding, Induction Heating, Motor Drives
• Battery Chargers
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG14N50D-E3
Lead (Pb)-free and Halogen-free
SiHG14N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain
LIMIT
VDS
500
VGS
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C)
SYMBOL
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Linear Derating Factor
± 30
UNIT
V
30
14
9
A
38
1.6
W/°C
mJ
Single Pulse Avalanche Energyb
EAS
56
Maximum Power Dissipation
PD
208
W
TJ, Tstg
- 55 to + 150
°C
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dtd
Soldering Recommendations (Peak Temperature)
for 10 s
dV/dt
24
0.4
300c
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD  ID, starting TJ = 25 °C.
S12-1229-Rev. A, 21-May-12
Document Number: 91513
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG14N50D
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthJC
-
62
0.6
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 250 μA
-
0.58
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
1
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
10
Drain-Source On-State Resistance
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V
ID = 7 A
VDS = 50 V, ID = 7 A
μA
-
0.320
0.40

-
5.2
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
1144
-
Output Capacitance
Coss
VDS = 100 V,
-
100
-
Reverse Transfer Capacitance
Crss
f = 1 MHz
-
12
-
Effective Output Capacitance, Energy
relateda
Co(er)
-
87
-
Effective Output Capacitance, Time
relatedb
Co(tr)
-
125
-
pF
VGS = 0 V, VDS = 0 V to 400 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 7 A, VDS = 400 V
-
29
58
-
8
-
-
14
-
-
16
32
nC
VDD = 400 V, ID = 7 A
Rg = 9.1 , VGS = 10 V
-
27
54
-
29
58
-
26
52
f = 1 MHz, open drain
-
1.7
-
-
-
14
-
-
56
-
-
1.2
V
-
319
-
ns
-
3.0
-
μC
-
18
-
A
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 7 A, VGS = 0 V
TJ = 25 °C, IF = IS = 7 A,
dI/dt = 100 A/μs, VR = 20 V
S
Note
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S12-1229-Rev. A, 21-May-12
Document Number: 91513
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG14N50D
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
30
3
TJ = 25 °C
ID = 7 A
RDS(on), Drain-to-Source
On Resistance (Normalized)
ID, Drain-to-Source Current (A)
40
20
10
2.5
2
1.5
0.5
5.0 V
0
0
5
10
15
20
25
VGS = 10 V
1
0
- 60 - 40 - 20 0
30
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
30
10 000
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTYTOM 5.0 V
18
TJ = 150 °C
C iss
Capacitance (pF)
ID, Drain-to-Source Current (A)
TOP
24
12
1000
VGS = 0 V, f = 1 MHz
C iss = C gs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
100
Coss
10
6
Crss
5.0 V
1
0
0
5
10
15
20
25
30
0
VDS, Drain-to-Source Voltage (V)
100
200
24
VGS, Gate-to-Source Voltage (V)
30
20
TJ = 150 °C
400
500
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
40
10
300
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
ID, Drain-to-Source Current (A)
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
TJ = 25 °C
VDS = 400 V
VDS = 250 V
VDS = 100 V
20
16
12
8
4
0
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S12-1229-Rev. A, 21-May-12
25
0
10
20
30
40
50
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91513
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG14N50D
www.vishay.com
Vishay Siliconix
100
10
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
16
TJ = 150 °C
1
TJ = 25 °C
12
8
4
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
VSD, Source-Drain Voltage (V)
25
50
75
100
125
150
TJ, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
1000
625
ID, Drain Current (A)
600
VDS, Drain-to-Source
Brakdown Voltage (V)
Operation in this Area
Limited by RDS(on)
100
IDM = Limited
10
100 μs
Limited by RDS(on)*
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10 ms
550
525
500
BVDSS Limited
10
100
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is s
Fig. 8 - Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
575
475
- 60 - 40 - 20 0
1000
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S12-1229-Rev. A, 21-May-12
Document Number: 91513
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG14N50D
www.vishay.com
V DS
RD
V DS
V GS
Vishay Siliconix
tp
V DD
D.U.T.
RG
+
- V DD
V DS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 12 - Switching Time Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
V DS
90 %
QG
10 V
QGS
10 %
V GS
QGD
VG
td(on)
td(off)
tr
tf
Charge
Fig. 13 - Switching Time Waveforms
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary t p to obtain
required IAS
VDS
50 kΩ
D.U.T.
RG
+
-
I AS
12 V
0.2 μF
0.3 μF
V DD
+
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 14 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S12-1229-Rev. A, 21-May-12
Document Number: 91513
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG14N50D
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91513.
S12-1229-Rev. A, 21-May-12
Document Number: 91513
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000