SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) a 0.024 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 • TrenchFET® power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 3.8 nC • Thin 0.8 mm profile • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Thin PowerPAK® 1212-8 Single D D 8 D 7 D 6 5 APPLICATIONS 0.8 mm 3. D • Notebook PC - System power - Load switch 3 m m 1 3.3 mm Top View 1 2 S 3 S 4 S G Bottom View • Synchronous buck high-side G S Ordering Information: SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C 12 a ID TA = 25 °C 8.7 b, c 7 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current L = 0.1 mH Single Pulse Avalanche Energy 12 a 2.7 b, c IAS 5 EAS 1.25 TC = 25 °C 10 PD TA = 25 °C W 3.2 b, c 2 b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 15.6 TC = 70 °C Maximum Power Dissipation A 30 IS TA = 25 °C Single Pulse Avalanche Current V 12 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) e, f °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient b, d t ≤ 10 s Maximum Junction-to-Case (Drain) Steady State TYPICAL MAXIMUM RthJA 32 39 RthJC 6.5 8 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 81 °C/W. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S14-1340-Rev. A, 30-Jun-14 Document Number: 62965 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS822DNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 35 - - -4.5 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 μA 1 - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 20 - - VGS = 10 V, ID = 7.8 A - 0.020 0.024 VGS = 4.5 V, ID = 7 A - 0.024 0.030 VDS = 10 V, ID = 7.8 A - 17 - - 435 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 95 - - 42 - μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 15 V, VGS = 10 V, ID = 7.8 A - 8 12 - 3.8 6 VDS = 15 V, VGS = 4.5 V, ID = 7.8 A - 1.4 - - 1.1 - f = 1 MHz 1.5 3.2 4.5 - 15 25 - 12 20 - 13 20 tf - 10 15 td(on) - 5 10 td(on) VDD = 15 V, RL = 2.4 Ω ID ≅ 6.3 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) VDD = 15 V, RL = 2.4 Ω ID ≅ 6.3 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf pF nC Ω ns - 10 15 - 15 25 - 10 15 - - 4.2 - - 30 - 0.8 1.2 V - 15 25 ns - 7 12 nC - 9 - - 6 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 6.3 A, VGS = 0 V IF = 6.3 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1340-Rev. A, 30-Jun-14 Document Number: 62965 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS822DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 30 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 VGS = 3 V 10 4 TC = 25 °C 2 5 TC = 125 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 2.5 3.0 25 30 600 500 0.030 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6 VGS = 4.5 V 0.025 0.020 VGS = 10 V 0.015 Ciss 400 300 200 Coss 100 Crss 0.010 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 On-Resistance vs. Drain Current 20 Capacitance 1.8 10 R DS(on) - On-Resistance (Normalized) ID = 7.8 A VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2 4 6 8 ID = 7.8 A 1.6 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-1340-Rev. A, 30-Jun-14 150 Document Number: 62965 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS822DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.8 A 10 TJ = 25 °C TJ = 150 °C 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.9 50 1.8 1.7 1.6 1.5 Power (W) VGS(th) (V) 40 ID = 250 µA 1.4 1.3 30 20 1.2 1.1 10 1.0 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 Limited by RDS(on)* Limited by IDM I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-1340-Rev. A, 30-Jun-14 Document Number: 62965 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS822DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 16 25 20 Power (W) I D - Drain Current (A) 12 15 Package Limited 10 8 4 5 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1340-Rev. A, 30-Jun-14 Document Number: 62965 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS822DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62965. S14-1340-Rev. A, 30-Jun-14 Document Number: 62965 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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