SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0115 at VGS = 10 V 30 a 0.0153 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 G2 S2 8 S2 7 S2 6 5 S1/D2 APPLICATIONS (Pin 9) D1 m m 1 m 3m Top View • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested PowerPAIR® 3 x 3 3 • PowerPAIR® optimizes high-side and low-side MOSFETs for synchronous buck converters 1 2 G1 3 D1 4 D1 D1 Bottom View D1 • Synchronous buck - Battery charging - Computer system power - Graphic cards • POL G1 N-Channel 1 MOSFET S1/D2 G2 Ordering Information: SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS +20 / -16 TC = 70 °C TA = 25 °C ID Continuous Source Drain Diode Current Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C Soldering Recommendations (Peak Temperature) d, e 100 A 13.9 3.1 b, c 10 5 mJ 16.7 PD 10.7 3.7 b, c W 2.4 b, c TA = 70 °C Operating Junction and Storage Temperature Range 26.5 15.6 b, c 12.4 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) V 30 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 260 °C Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS CHANNEL-1 AND CHANNEL-2 PARAMETER Maximum Junction-to-Ambient a, b Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. t ≤ 10 s RthJA 27 34 Steady State RthJC 6 7.5 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS VGS = 0 V, ID = 250 μA 30 - - ΔVDS/TJ ID = 250 μA - 20 - ΔVGS(th)/TJ ID = 250 μA - -5.6 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.4 V Gate Source Leakage IGSS VDS =0 V, VGS = +20 V/ -16 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current b ID(on) Drain-Source On-State Resistance b Forward Transconductance b RDS(on) gfs VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 VDS ≤ 5 V,VGS = 10 V 10 - - VGS = 10 V, ID = 14.4 A - 0.0084 0.0115 VGS = 4.5 V, ID = 13 A - 0.0111 0.0153 VDS = 15 V, ID = 14.4 A - 37 - - 650 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 236 - - 20 - 0.03 - 0.06 - 10 20 μA A Ω S Dynamic a Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Crss / Ciss Ratio Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time S15-0031-Rev. B, 19-Jan-15 VDS = 15 V, VGS = 10 V, ID = 14.4 A VDS = 15 V,VGS = 4.5 V, ID = 14.4 A - 4.5 9 - 2.1 - - 0.7 - - 6.6 - 0.3 1.4 2.8 - 15 23 - 50 75 - 16 24 tf - 10 20 td(on) - 8 16 - 15 23 - 17 26 - 7 14 Rg f = 1 MHz td(on) tr td(off) tr td(off) tf VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω pF - nC Ω ns Document Number: 62949 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS TC = 25 °C MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD IS = 10 A, VGS = 0 V - - 13.9 - - 100 - 0.8 1.2 A V Body Diode Reverse Recovery Time trr - 20 35 ns Body Diode Reverse Recovery Charge Qrr - 10 20 nC Reverse Recovery Fall Time ta - 12.5 - Reverse Recovery Rise Time tb - 7.5 - IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 50 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 6 TC = 25 °C 4 VGS = 3 V 10 2 0 0 TC = 125 °C TC = - 55 °C 0 0.5 1 1.5 2 0 0.75 VDS - Drain-to-Source Voltage (V) 1.5 2.25 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 840 0.0215 RDS(on) - On-Resistance (Ω) Ciss C - Capacitance (pF) 630 0.0165 VGS = 4.5 V 0.0115 VGS = 10 V 420 210 0.0065 Coss Crss 0.0015 0 0 10 20 30 40 50 0 12 18 On-Resistance vs. Drain Current Capacitance 1.65 ID = 14.4 A RDS(on) - On-Resistance (Normalized) VDS = 8 V 8 6 VDS = 15 V, 24 V 4 2 0 0 24 VDS - Drain-to-Source Voltage (V) 10 VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) 2 4 6 Qg - Total Gate Charge (nC) Gate Charge S15-0031-Rev. B, 19-Jan-15 8 10 30 VGS = 10 V, 14.4 A VGS = 4.5 V, 13 A 1.4 1.15 0.9 0.65 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62949 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID =14.4 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.024 TJ = 150 °C 10 TJ = 25 °C 1 0.018 TJ = 125 °C 0.012 TJ = 25 °C 0.006 0.000 0.1 0.0 0.3 0.6 0.9 2 1.2 4 VSD - Source-to-Drain Voltage (V) 50 ID = 250 μA 40 1.35 30 Power (W) VGS(th) (V) 10 On-Resistance vs. Gate-to-Source Voltage 1.6 1.1 0.85 0.6 - 50 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.85 6 20 10 - 25 0 25 50 75 100 125 150 0 TJ - Temperature (°C) 0.001 0.01 0.1 1 Time (s) 10 100 1000 Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by IDM Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 10 s, 1 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 Package Limited ID - Drain Current (A) 28 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 2.2 15 1.7 Power (W) Power (W) Current Derating* 10 1.1 0.6 5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342DT www.vishay.com Vishay Siliconix CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 69 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62949. S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. 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