SiS415DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A) Qg (Typ.) a 0.0040 at VGS = - 10 V - 35 0.0055 at VGS = - 4.5 V - 35a 0.0095 at VGS = - 2.5 V a 55.5 nC - 35 Thin PowerPAK® 1212-8 S 3.3 mm APPLICATIONS • Smart Phones, Tablet PCs, and 33 1 S 2 S 3 G 4 0.8 mm D 8 • Thin 0.8 mm max. height • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Mobile Computing - Battery Switch - Load Switch - Power Management S G D 7 3.3 mm D 6 D 5 D Bottom View P-Channel MOSFET Ordering Information: SiS415DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) - TC = 70 °C - 35a TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Unit V 35a TC = 25 °C Pulsed Drain Current (t = 300 µs) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit - 20 ± 12 - 22.6b, c - 18.2b, c - 80 - 35a - 3.3b, c - 20 20 52 33 3.7b, c 2.4b, c - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s RthJA 26 33 Maximum Junction-to-Ambientb, f °C/W 1.9 2.4 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS415DNT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 3.1 - 0.4 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 10 V RDS(on) V - 14 - 30 µA A VGS = - 10 V, ID = - 20 A 0.0033 0.0040 VGS = - 4.5 V, ID = - 15 A 0.0044 0.0055 VGS = - 2.5 V, ID = - 10 A 0.0076 0.0095 VDS = - 10 V, ID = - 20 A 70 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5460 VDS = - 10 V, VGS = 0 V, f = 1 MHz 642 VDS = - 10 V, VGS = - 10 V, ID = - 10 A VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A f = 1 MHz td(on) Turn-On Delay Time VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 tr Rise Time Fall Time Turn-On Delay Time 2.2 4 37 70 70 tf 25 50 td(on) 14 25 VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 tf Fall Time 0.4 150 td(off) Turn-Off Delay Time 85 7.9 38 tr Rise Time 180 82 td(off) Turn-Off Delay Time 117 55.5 nC 12.7 Rg Gate Resistance pF 645 13 25 83 150 14 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 35 - 80 IS = - 4 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.72 - 1.1 V 25 50 ns 12 24 nC 11 14 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS415DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 3 V 64 ID - Drain Current (A) ID - Drain Current (A) 64 48 32 VGS = 2 V 16 48 TC = 25 °C 32 16 TC = 125 °C VGS = 1 V 0 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.8 VDS - Drain-to-Source Voltage (V) 3.2 4.0 Transfer Characteristics 8000 0.0160 6400 C - Capacitance (pF) 0.0200 0.0120 VGS = 2.5 V 0.0080 Ciss 4800 3200 VGS = 4.5 V Coss 1600 0.0040 VGS = 10 V Crss 0 0.0000 0 16 32 48 64 0 80 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics RDS(on) - On-Resistance (Ω) 1.6 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 2 VGS = 10 V ID = 20 A 1.4 1.2 VGS = 2.5 V 1.0 0.8 0.6 0 0 25 50 75 100 Qg - Total Gate Charge (nC) 125 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS415DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 ID = 20 A 0.016 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.012 0.008 TJ = 125 °C 0.01 0.004 0.001 0.000 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 0.4 100 80 - 0.6 Power (W) VGS(th) (V) ID = 250 μA - 0.8 ID = 1 mA 40 20 - 1.0 - 1.2 - 50 60 0 0.001 - 25 0 25 50 75 100 125 0.01 150 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited 100 μs ID - Drain Current (A) 10 ID Limited 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS415DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 Limited by Package 40 20 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 13 0.8 0.4 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) 125 Power Derating, Junction-to-Case 150 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS415DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63684. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 63684 S13-0464-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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