Si5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel - 20 ID (A)a 6 6 6 -6 -6 -6 Qg 6 nc 5.5 nc COMPLIANT • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 Marking Code 2 S1 G1 EA 3 D1 4 S2 D1 D1 XXX S2 Lot Traceability and Date Code Part # Code 7 G2 G2 D2 6 RoHS APPLICATIONS PowerPAK ChipFET Dual 8 • Halogen-free • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile G1 D2 5 Bottom View Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Source-Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Temperature)d, e N-Channel 20 P-Channel - 20 ±8 6a 6a 7.2b, c 5.8b, c 20 6.9 - 6a - 6a - 4.6b, c - 3.7b, c - 15 - 6.9 1.9b, c 8.3 5.3 - 1.9b, c 8.3 5.3 2.3b, c 1.5b, c 2.3b, c 1.5b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter N-Channel Typ. Max. 45 55 12 15 P-Channel Typ. Max. 45 55 12 15 Unit t≤5s Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W for both channels. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Symbol RthJA RthJC www.vishay.com 1 Si5517DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 1 mA N-Ch 20 VGS = 0 V, ID = - 1 mA P-Ch - 20 ID = 250 µA N-Ch On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs 17 ID = - 250 µA P-Ch - 20 ID = 250 µA N-Ch - 2.6 2.4 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.4 1 VDS = VGS, ID = - 250 µA P-Ch - 0.4 -1 VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current V N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≤ 5 V, VGS = 4.5 V N-Ch 20 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 15 VGS = 4.5 V, ID = 4.4 A N-Ch 0.032 VGS = - 4.5 V, ID = - 3.3 A P-Ch 0.060 0.072 VGS = 2.5 V, ID = 4.1 A N-Ch 0.037 0.045 VGS = - 2.5 V, ID = - 2.8 A P-Ch 0.083 0.100 V nA µA A 0.039 VGS = 1.8 V, ID = 1.8 A N-Ch 0.0455 0.055 VGS = - 1.8 V, ID = - 0.76 A P-Ch 0.108 0.131 VDS = 10 V, ID = 4.4 A N-Ch 22 VDS = - 10 V, ID = - 3.3 A P-Ch 9 N-Ch 520 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss Qg P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz Qgs Gate-Drain Charge Qgd Gate Resistance www.vishay.com 2 Rg 455 N-Ch 100 P-Ch 105 N-Ch 60 pF P-Ch 65 VDS = 10 V, VGS = 8 V, ID = 4.4 A N-Ch 10.5 16 VDS = - 10 V, VGS = - 8 V, ID = - 4.6 A P-Ch 9.1 14 N-Ch 6 9 P-Ch 5.5 8.5 N-Ch 0.91 P-Ch P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A N-Ch P-Ch 0.75 N-Ch 1.9 P-Ch 8 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A Gate-Source Charge P-Ch f = 1 MHz nC 0.7 1.5 Ω Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time N-Ch 20 30 P-Ch 8 15 N-Ch 65 100 P-Ch 35 55 N-Ch 40 60 40 60 P-Channel P-Ch VDD = - 10 V, RL = 2.7 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch P-Ch 10 15 55 85 N-Ch 5 10 10 N-Channel VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 8 V, Rg = 1 Ω tf P-Channel VDD = - 10 V, RL = 2.7 Ω ID ≅ - 3.7 A, VGEN = - 8 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω P-Ch 5 N-Ch 12 20 P-Ch 15 25 N-Ch 26 40 P-Ch 30 45 N-Ch 8 15 P-Ch 45 70 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM N-Ch 6.9 P-Ch - 6.9 N-Ch 20 P-Ch VSD - 15 IS = 1.2 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 1.0 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 45 70 P-Ch 30 60 Qrr N-Channel N-Ch IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch 21 32 15 30 Reverse Recovery Fall Time ta P-Channel IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge A N-Ch 29 P-Ch 11 N-Ch 16 P-Ch 19 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 3 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 2.5 V thru 5 V 8 VGS = 2.5 V ID - Drain Current (A) I D - Drain Current (A) 16 VGS = 2 V 12 VGS = 1.5 V 8 4 6 4 TC = 125 °C 2 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 - 55 °C 0 0.0 3.0 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 800 0.08 VGS = 4.5 V 0.07 600 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.3 0.05 VGS = 2.5 V 0.04 0.03 VGS = 1.8 V Ciss 400 200 0.02 Coss 0.01 Crss 0 0.00 0 4 8 12 16 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 ID = 4.4 A 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 4 VDS = 16 V 2 VGS = 4.5 V ID = 4.4 A 1.2 1.0 0.8 0 0 www.vishay.com 4 3 6 9 12 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.08 RDS(on) - Drain-to-Source On-Resistance (mΩ) 20 ID = 4.4 A 0.07 0.06 125 °C 0.05 25 °C 0.04 0.03 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 40 0.8 Power (W) VGS(th) (V) 30 ID = 250 µA 0.7 0.6 0.5 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) Limited by RDS(on)* 10 IDM limited ID(on) limited 100 µs 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25 °C Single Pulse 10 s DC BVDSS limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 5 Si5517DU Vishay Siliconix 15 10 12 8 Power Dissipation (W) I D - Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 Package Limited 6 6 4 3 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 87 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 7 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 3V 4.5 V 4 4V 3.5 V I D - Drain Current (A) I D - Drain Current (A) 12 5 2.5 V VGS = 5 V 2V 9 6 1.5 V 3 3 2 TC = 125 °C TC = 25 °C 1 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 800 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.25 0.20 VGS = 2.5 V 0.15 Ciss 400 200 0.10 Coss VGS = 4.5 V Crss 0.05 0 0 3 6 9 12 15 0 8 12 16 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.5 8 1.4 ID = 4.6 A 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V 4 VDS = 16 V 2 VGS = 4.5 V I D = 3.3 A 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 12 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C I D = 4.6 A 0.16 0.12 TA = 125 °C 0.08 TA = 25 °C 0.04 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 0 1.4 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 40 I D = 250 µA 30 Power (W) 0.7 VGS(th) (V) 2 0.6 0.5 20 10 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM limited Limited by R DS(on)* I D - Drain Current (A) 10 ID(on) limited 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 9 Si5517DU Vishay Siliconix 10 10 8 8 Power Dissipation (W) ID - Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 6 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 87 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73529. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 11 Package Information www.vishay.com Vishay Siliconix PowerPAK® ChipFET® Case Outline D (7) (6) (5) (1) (2) (3) (4) E (8) Pin #1 indicator Side view of single e b H D1 D(2) D2 K D(3) L G(4) K1 D2 SI(1) GI(2) S2(3) D1(8) D1(7) D2(6) Detail Z G2(4) K2 L D(1) A1 C A Z Side view of dual E1 E2 E3 H D3 D(8) D(7) D(6) S(5) K3 Backside view of dual pad Backside view of single pad DIM. D2(5) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.85 0.028 0.030 0.033 A1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 C 0.15 0.20 0.25 0.006 0.008 0.010 D 2.92 3.00 3.08 0.115 0.118 0.121 D1 1.75 1.87 2.00 0.069 0.074 0.079 D2 1.07 1.20 1.32 0.042 0.047 0.052 D3 0.20 0.25 0.30 0.008 0.010 0.012 E 1.82 1.90 1.98 0.072 0.075 0.078 E1 1.38 1.50 1.63 0.054 0.059 0.064 E2 0.92 1.05 1.17 0.036 0.041 0.046 E3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 BSC 0.026 BSC H 0.15 0.20 0.25 0.006 0.008 0.010 K 0.25 - - 0.010 - - K1 0.30 - - 0.012 - - K2 0.20 - - 0.008 - - K3 0.20 - - 0.008 - - L 0.30 0.35 0.40 0.012 0.014 0.016 C14-0630-Rev. E, 21-Jul-14 DWG: 5940 Note • Millimeters will govern Document Number: 73203 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 21-Jul-14 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Dual 2.700 (0.106) 0.300 (0.012) 0.350 (0.014) 0.650 (0.026) 1.900 (0.075) 0.300 (0.012) 1.050 (0.041) 0.350 (0.014) 0.200 (0.008) 0.300 (0.012) 0.225 (0.009) 0.650 (0.026) 1.175 (0.046) 1.525 (0.060) Recommended Minimum Pads Dimensions in mm/(Inches) APPLICATION NOTE Note: This is Flipped Mirror Image Pin #1 Location is Top Left Corner Return to Index www.vishay.com 10 Document Number: 69949 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000