SiHJ6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.755 Qg max. (nC) 32 • Reduced switching and conduction losses Qgs (nC) 5 • Ultra low gate charge (Qg) Qgd (nC) 7 • Avalanche energy rated (UIS) Configuration Single PowerPAK® SO-8L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting G - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer S - Adaptors N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SiHJ6N65E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a UNIT V 5.6 ID A 3.6 IDM 12 Linear Derating Factor 0.76 W/°C Single Pulse Avalanche Energy b EAS 36 mJ Maximum Power Dissipation PD 74 W TJ, Tstg -55 to +150 °C Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt c 70 dV/dt V/ns 9.4 Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 1.6 A. c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA 52 65 Maximum Junction-to-Case (Drain) RthJC 1.2 1.7 S16-0840-Rev. B, 09-May-16 UNIT °C/W Document Number: 91589 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.8 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS RDS(on) VGS = ± 30 V - - ±1 VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 - 0.755 0.868 - S VGS = 10 V ID = 3 A gfs VDS = 30 V, ID = 3 A - 1.8 Input Capacitance Ciss 596 - Coss - 35 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 4 - Effective Output Capacitance, Energy Related a Co(er) - 26 - Effective Output Capacitance, Time Related b Co(tr) - 90 - - 16 32 - 5 - - 7 - μA Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 14 28 tr VDD = 520 V, ID = 3 A, VGS = 10 V, Rg = 9.1 - 14 28 - 25 50 - 17 34 f = 1 MHz 0.4 0.8 1.6 - - 5.6 - - 12 Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 3 A, VDS = 520 V nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 3 A, VGS = 0 V TJ = 25 °C, IF = IS = 3 A, dI/dt = 100 A/μs, VR = 25 V S - 0.9 1.2 V - 278 556 ns - 2.1 4.2 μC - 12 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S16-0840-Rev. B, 09-May-16 Document Number: 91589 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 15 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 12 9 ID = 3 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) 6 3 0 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 8 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 150 °C 1000 C, Capacitance (pF) 6 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics ID, Drain-to-Source Current (A) 2.5 4 Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 100 Coss 10 2 Crss 1 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 15 10 000 5 4.5 4 3.5 1000 9 3 Coss (pF) ID, Drain-to-Source Current (A) TJ = 25 °C 12 TJ = 150 °C 6 Coss Eoss 2.5 2 100 Eoss (μJ) ID, Drain-to-Source Current (A) TOP 1.5 3 1 0.5 VDS = 31 V 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0840-Rev. B, 09-May-16 0 10 20 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91589 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix 6 VDS = 520 V VDS = 325 V VDS = 130 V 20 16 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 12 8 4 2 4 0 0 6 12 18 24 0 30 25 50 Qg, Total Gate Charge (nC) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature VDS, Drain-to-Source Breakdown Voltage (V) 875 ISD, Reverse Drain Current (A) 10 TJ = 150 °C TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-Drain Voltage (V) 1.2 Fig. 8 - Typical Source-Drain Diode Forward Voltage 850 825 800 775 750 725 700 675 ID = 250 μA 650 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 100 Operation in this area limited by RDS(on) IDM limited ID, Drain Current (A) 10 100 μs 1 Limited by RDS(on)* 1 ms 0.1 10 ms TC = 25 °C TJ = 150 °C Single pulse 0.01 1 BVDSS limited 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S16-0840-Rev. B, 09-May-16 Document Number: 91589 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.000001 0.00001 0.0001 0.001 Pulse Time (s) 0.01 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 0.001 Single pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Time (s) Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient VDS VGS RG RD VDS 90 % D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 14 - Switching Time Test Circuit S16-0840-Rev. B, 09-May-16 10 % VGS td(on) tr td(off) tf Fig. 15 - Switching Time Waveforms Document Number: 91589 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS QG 10 V D.U.T RG + - IAS QGS QGD V DD VG 10 V 0.01 Ω tp Charge Fig. 16 - Unclamped Inductive Test Circuit Fig. 18 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS tp 50 kΩ VDD 12 V 0.2 µF 0.3 µF + VDS D.U.T. - VDS VGS IAS Fig. 17 - Unclamped Inductive Waveforms 3 mA IG ID Current sampling resistors Fig. 19 - Gate Charge Test Circuit S16-0840-Rev. B, 09-May-16 Document Number: 91589 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ6N65E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 20 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91589. S16-0840-Rev. B, 09-May-16 Document Number: 91589 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for Non-Al Parts W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 16-May-16 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 b4 0.004 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117 0° - 10° 0° - 10° ECN: T16-0221-Rev. D, 16-May-16 DWG: 5976 Note • Millimeters will gover Revision: 16-May-16 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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